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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: T O S H IB A MICROWAVE POWER GaAs FET JS8855-AS Power GaAs FETs Chip Form Features • High power - P 1dB = 32 dBm at f = 15 G H z • High gain - G idB = 7 dB at f = 15 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8855-AS 18GHz 15GHz JS8855-AS 002105b MW10130196

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: T O S H IB A MICROWAVE POWER GaAs FET JS8855-AS Power GaAs FETs Chip Form Features • High power - P 1dB = 32 dBm at f = 15 G H z • High gain - G idB = 7 dB at f = 15 G H z • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

OCR Scan

PDF

JS8855-AS 18GHz 15GHz JS8855-AS 002105b MW10130196