Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8820-AS Power GaAs FETs Chip Form Features • High power - P1dB = 36 dBm at f = 6 GHz • High gain - G1dB = 8.5 dB at f = 6 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)
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JS8820-AS
MW10040196
JS8820-AS
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8820-AS Power GaAs FETs Chip Form Features • High power - P idB = 36 dBm at f = 6 GHz • High gain - G idB = 8.5 dB at f = 6 GHz • Suitable for C-Band am plifier • Ion implantation • C h ip form RF Performance Specifications (Ta = 25° C)
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OCR Scan
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PDF
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JS8820-AS
MW10040196
JS8820-AS
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS 8820-A S Power GaAs FETs Chip Form Features • High power - P idB = 36 dBm at f = 6 GHz • High gain - — 8.5 dB at f = 6 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)
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OCR Scan
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PDF
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820-A
JS8820-AS
JS8820-AS
Cds23
MW10040196
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