UV LED 310 nm
Abstract: ENFIS UNO Air Cooled Light 400X MW288 LM LED driver led light engine fan pc
Text: ENFIS UNO AIR COOLED LIGHT ENGINE ENFIS UPTO 36W POWER CAPABILITY The European Power of Ingenuity Typical Array Light Output Levels* Wavelengths nm 375 310 mW 410 4680 mW 465 4680 mW / 252 Lumens 520 1980 mW / 792 Lumens 595 770 mW / 360 Lumens 630 1760 mW / 288 Lumens
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6500K
UV LED 310 nm
ENFIS UNO Air Cooled Light
400X
MW288
LM LED driver
led light engine
fan pc
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PDF
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GFM 51A
Abstract: GFM 16A 921 6v8a GFK 13A CASE 403A GFM 22A gfx 56a mrc 444 gfx 75A GFM 15A
Text: TVS — in Surface Mount Table 10. Surface Mount Packages − 0.225 Watt Nominal Zener Breakdown Voltage 225 mW Energy Rated SOT−23 225 mW Energy Rated SOT−23 500 mW Energy Rated SOD−123 500 mW Energy Rated SOD−123 500 mW Energy Rated SOD−123 Case 318
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OT-23
OD-123
OD-123
MMBZ5221ELT1
MMSZ10ET1
MMSZ11ET1
MMSZ12ET1
MMSZ13ET1
GFM 51A
GFM 16A
921 6v8a
GFK 13A
CASE 403A
GFM 22A
gfx 56a
mrc 444
gfx 75A
GFM 15A
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PDF
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mu diode
Abstract: Hitachi DSA00100 ECN3064 ECN3064SP ECN3064SPR ECN3064SPV Hitachi motor driver
Text: ECN3064 4. Electrical Characteristics Ta=25 °C Unless otherwise specified, VCC=15V, VS=325V Suffix T; Top arm No. Items 1 Standby Current 2 3 Output device FVD 4 Symbols IS ICC VFT Terminal VS1,VS2 VCC MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV,
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Original
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ECN3064
mu diode
Hitachi DSA00100
ECN3064
ECN3064SP
ECN3064SPR
ECN3064SPV
Hitachi motor driver
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PDF
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MMBD6050LT1
Abstract: MMBD6050LT1G MMBD6050LT3 MMBD6050LT3G 5A SOT23-3
Text: MMBD6050LT1 Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA
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Original
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MMBD6050LT1
MMBD6050LT1
MMBD6050LT1G
MMBD6050LT3
MMBD6050LT3G
5A SOT23-3
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PDF
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MMBD2835LT1
Abstract: MMBD2836LT1
Text: ON Semiconductort MMBD2835LT1 MMBD2836LT1 Monolithic Dual Switching Diodes MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Symbol Value Unit VR 35 75 Vdc IF 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W
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Original
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MMBD2835LT1
MMBD2836LT1
r14525
MMBD2835LT1/D
MMBD2835LT1
MMBD2836LT1
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PDF
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Untitled
Abstract: No abstract text available
Text: BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current
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Original
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BAW56TT1
OT-416/SC-75
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PDF
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BAW56TT1
Abstract: SMD310
Text: BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current
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Original
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BAW56TT1
r14525
BAW56TT1/D
BAW56TT1
SMD310
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PDF
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MMBD6050LT1
Abstract: No abstract text available
Text: ON Semiconductort Switching Diode MMBD6050LT1 3 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg
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Original
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MMBD6050LT1
236AB)
r14525
MMBD6050LT1/D
MMBD6050LT1
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PDF
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MMBD6050LT1
Abstract: No abstract text available
Text: ON Semiconductort Switching Diode MMBD6050LT1 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg
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Original
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MMBD6050LT1
r14525
MMBD6050LT1/D
MMBD6050LT1
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PDF
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BAV70
Abstract: BAV70TT1 SMD310
Text: BAV70TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current
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Original
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BAV70TT1
r14525
BAV70TT1/D
BAV70
BAV70TT1
SMD310
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PDF
|
Untitled
Abstract: No abstract text available
Text: BAV70TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current
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Original
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BAV70TT1
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PDF
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mmbd6050lt1
Abstract: No abstract text available
Text: ON Semiconductort Switching Diode MMBD6050LT1 3 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg
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Original
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MMBD6050LT1
236AB)
mmbd6050lt1
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PDF
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Untitled
Abstract: No abstract text available
Text: BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current
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Original
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BAW56TT1
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PDF
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SOT23 MARK Y2
Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
Text: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)
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OCR Scan
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DO-204AH
DO-35)
OT-23
O-236AA/AB)
MLL4678
MLL4679
MLL4680
L4681
MLL4682
SOT23 MARK Y2
BZXB4C10
MARK Y6 Transistor
SOT23 MARK Y3
1N5239B equivalent
BZXB4C4V7
MMBPU131
glass zener diodes motorola 1n746
B2X84C
1N756A
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PDF
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ams SOT23
Abstract: No abstract text available
Text: I n ter n a tio n a l MMBZ5226 thru S e m ic o n d u c to r , I n c . MMBZ5262 350 mW SURFACE MOUNT ZENER DIODES THERMAL C HA RA CTERISTICS f' Characteri sti c Symbol Max Uni t 225 mW 1.30 mW/ °C R oja 556 °C/mW Pq 300 mW 2. 40 mW/ °C 417 °C/mW Po Total Devi ce Dissi pati on Mounted on
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OCR Scan
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MMBZ5226
MMBZ5262
T00037Ö
ams SOT23
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PDF
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2148 static ram
Abstract: No abstract text available
Text: Am2148/Am2149 Am21 L48/Am21 L49 L Adv mS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • Low power dissipation - Am2148: 990 mW active, 165 mW power down - Am21L48: 688 mW active, 110 mW power down High output drive - Up to seven standard TTL loads
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OCR Scan
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Am2148/Am2149
L48/Am21
1024x4
Am2148)
Am2148:
Am21L48
OP000730
OP000741
OP001081
OP000771
2148 static ram
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PDF
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am2101
Abstract: AM9101 256x4 static ram
Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power • High output drive — two full TTL loads 290 mW maximum— standardpower• High noise immunity — full 400 mV 175 mW
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OCR Scan
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256x4
Am9101/Am91L01
1024-bit,
MIL-STD-883
am2101
AM9101
256x4 static ram
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PDF
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AM9112
Abstract: am91l12
Text: Am9112 2 56 x4 Static RAM ZU 6U JV DISTINCTIVE CHARACTERISTICS Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise imm unity — full 400 mV Uniform switching characteristics — access times insen
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OCR Scan
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Am9112
9112/A
91L12
1024-bit,
WF000610
MIL-STD-883,
AM9112
am91l12
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PDF
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Am2101
Abstract: AM9101 2101 256x4 L01A amd 9101 256x4 static ram ram 256 256x4 Am2101-2 AM9101CPC
Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power • High output drive — two full TTL loads 290 mW maximum— standardpower• High noise immunity — full 400 mV 175 mW
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OCR Scan
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256x4
Am9101/Am91L01
1024-bit,
MIL-STD-883
Am2101
AM9101
2101 256x4
L01A
amd 9101
256x4 static ram
ram 256 256x4
Am2101-2
AM9101CPC
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PDF
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9112C
Abstract: AM9112 91L12A AM91L12A P2112A maxim 2112
Text: Am9112 2 5 6 x 4 Static RAM ZL16UIV DISTINCTIVE CHARACTERISTICS Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access tim es insen
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OCR Scan
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Am9112
ZL16UIV
9112/A
91L12
1024-bit,
MIL-STD-883,
9112C
AM9112
91L12A
AM91L12A
P2112A
maxim 2112
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PDF
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am9101
Abstract: 91l01 am91l01 9101C Am9101/91L01/2101
Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power 290 mW maximum — standardpower 175 mW maximum — low power levels identical to TTL • • • • High output drive — two full TTL loads
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OCR Scan
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Am9101
Am9101/Am91L01
1024-bit,
MIL-STD-883,
91l01
am91l01
9101C
Am9101/91L01/2101
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PDF
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AM9112
Abstract: ram 2112 256x4 static ram AM91L12 AM9112APC
Text: Am9112 Am9112 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access times insen
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OCR Scan
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Am9112
256x4
Am9112/Am91
1024-bit,
MIL-STD-883,
AM9112
ram 2112
256x4 static ram
AM91L12
AM9112APC
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PDF
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pc2101
Abstract: 91L01
Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating power 125 mW typ.; 290 mW maximum — standardpower 100 mW typ.; 175 mW maximum — low power Logic voltage levels identical to TTL • • • • High output drive — two full TTL loads
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OCR Scan
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Am9101
Am9101/Am91L01
1024-bit,
WF000200
MIL-STD-883,
pc2101
91L01
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PDF
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AM9112
Abstract: ram 2112 RAM 2112 256 word AM9112APC
Text: Am9112 Am9112 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access tim es insen
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OCR Scan
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Am9112
256x4
Am9112/Am91
1024-bit,
MIL-STD-883,
AM9112
ram 2112
RAM 2112 256 word
AM9112APC
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PDF
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