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    MV21SC14 Search Results

    MV21SC14 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MV21SC14 GEC Plessey Semiconductors 1024 x 4 Bit Static RAM Original PDF
    MV21SC14 GEC Plessey Semiconductors Telecomms Integrated Circuit Handbook Scan PDF
    MV21SC14 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MV21SC14-1 GEC Plessey Semiconductors 1024 x 4 Bit Static RAM Original PDF
    MV21SC14-2 GEC Plessey Semiconductors 1024 x 4 Bit Static RAM Original PDF
    MV21SC14-3 GEC Plessey Semiconductors 1024 x 4 Bit Static RAM Original PDF

    MV21SC14 Datasheets Context Search

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    30yW

    Abstract: 2114L MV21SC14 MV21SC14-1 MV21SC14-2 MV21SC14-3 UPD444
    Text: MV21SC14 A PLESSEY ADVANCE INFORMATION S e m ic o n d u c t o r s . CMOS Advance inform ation is issued to advise Customers of new additions to the Plessey S em iconductors range which, nevertheless, s till have ‘pre-production’ status. Details given may, therefore, change w ithout notice although we w ould expect th is performance data to


    OCR Scan     		PDF MV21SC14 V21SC14 4096-bit 30yW 2114L MV21SC14 MV21SC14-1 MV21SC14-2 MV21SC14-3 UPD444

    2114L

    Abstract: MV21SC14 MV21SC14-1 MV21SC14-2 MV21SC14-3
    Text: # 8 ü i l S S S ^ 2 , 0 CMOS çt/. 003698 ? - V MV21SC14 1024 x 4 BIT STATIC RAM T he MV21SC14 is a h ig h speed, lo w pow e r 4096-bit Static R andom Access M em ory, organised as1024 w ord s b y 4-bits and fabricated w ith th e IS O -C M O S process. It is a fu lly static


    OCR Scan     		PDF MV21SC14 MV21SC14 4096-bit as1024 200mV 2114L pPD444 200-300ns) 100mW) MV21SC14-1 MV21SC14-2 MV21SC14-3

    ram 2114L

    Abstract: 2114L UPD444 cn plessey CM09 MV21SC14 MV21SC14-1 MV21SC14-2 MV21SC14-3
    Text: MV21SC14 A PLESSEY w Sem iconductors. OVIOS ADVANCE INFORMATION Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have ‘pre-production’ status. Details given may, therefore, change without notice although we would expect this performance data to


    OCR Scan     		PDF MV21SC14 MV21SC14 4096-bit as1024 ram 2114L 2114L UPD444 cn plessey CM09 MV21SC14-1 MV21SC14-2 MV21SC14-3

    Untitled

    Abstract: No abstract text available
    Text: ^ ^ S m te o n d u c to r * 003698 OVIQS a,VoA MV21SC14 1024 x 4 BIT STATIC R A M The MV21SC14 is a high speed, low power 4096-bit Static Random Access Memory, organised as1024 words by 4-bits and fabricated with the ISO -CM O S process. It is a fully static


    OCR Scan     		PDF MV21SC14 MV21SC14 4096-bit as1024 200mV 2114L yPD444

    30yW

    Abstract: No abstract text available
    Text: MV21SC14 A PLESSEY W Semiconductors. ADVANCE INFORMATION CMOS Advance inform ation is issued to advise Customers of new additions to the Plessey Sem iconductors range which, nevertheless, s till have ‘pre-production’ status. Details given may, therefore, change w ithout notice although we would expect th is performance data to


    OCR Scan     		PDF MV21SC14 V21SC14 4096-bit 30yW