SL9100
Abstract: bubble memory plessey MV1812 MV1830 75H-0
Text: PLESS EY SEMICONDUCTORS jgE D • 7220513 000=1431 t> ■ PLESSEY " Semiconductors , T - '7 ~ H > '7 - 0 £ MV1830 TELETEXT DATA BUFFER The MV1830 is a 64 x 9 sequential data buffer designed to be used w ith the MV1812 Teletext Data A cquisition Circuit.
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00CH431
MV1830
MV1830
MV1812
10MHz
150mW
10MHz
SL9100
bubble memory plessey
75H-0
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Untitled
Abstract: No abstract text available
Text: {01 F L E S S E Y W S e m ic o n d u c to rs. MV1830 TELETEXT DATA BUFFER The MV1830 is a 64 x 9 sequential data buffer designed to be used w ith the MV1812 Teletext Data Acquisition Circuit. The MV1830 can be used singly, o r can be cascaded so that the data from m ultiple VBI lines may be stored, allowing time
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MV1830
MV1830
MV1812
10MHz
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SL9100
Abstract: sp30p
Text: PLESSEY 12Z D S E M I C O N DU C TO RS • 7220513 000=1431 t> ■ PLESSEY Semiconductors , T - '7 ~ H > '7 - 0 £ MV1830 TELETEXT DATA BUFFER The MV1830 is a 64 x 9 sequential data buffer designed to be used w ith the MV1812 Teletext Data A cquisition Circuit.
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MV1830
MV1830
MV1812
10MHz
150mW
SL9100
sp30p
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l9100
Abstract: sdc 7500 SL9100 Plessey st L9100
Text: MV1812 TELETEXT DATA ACQUISITION The M V 1812 is a h ig h speed CMOS c irc u it capable o f d e c o d in g an y W o rld System 625 lin e te le te x t transm issions. The c ir c u it o p e ra te s o n s e ria l t e le t e x t d a ta p ro v id e d by th e Plessey SL9100 D ata S lice r and
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MV1812
MV1812
SL9100
l9100
sdc 7500
Plessey
st L9100
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Selco
Abstract: No abstract text available
Text: P L E S S E Y SEMICONDUCTORS 1SE PLESSEY S em ico n d u cto rs D WÊ 722GS13 000T407 i =1 • n. T - 7 7 - 0 7 - 0 ^ M V 1 8 1 2 The M V1812 is a high speed CMOS circuit capable o f decoding any W orld System 625 line te le te x t transm issions. The c irc u it o p e ra te s on se ria l te le te x t d ata
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722GS13
000T407
V1812
SL9100
V1812
Selco
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