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    MUTING AND SWITCHING APPLICATION Search Results

    MUTING AND SWITCHING APPLICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    MUTING AND SWITCHING APPLICATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC2875 TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION. FEATURES 2009. 3. 12 Revision No : 3 1/3


    Original     		PDF KTC2875

    Untitled

    Abstract: No abstract text available
    Text: STICK-ON SERIES Model ST-MA2 Muting Monitor Amplifier ANYWHERE YOU NEED. • • • • • • A Single Speaker Monitor Amplifier A Conferencing Monitor Amp A Monitor Amp with Muting and Externally Actuated Attenuation Steps Fast, Silent Audio Switching


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 2 1/3


    Original     		PDF KRC231M KRC235M

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2011. 6. 29 Revision No : 6 1/3


    Original     		PDF KRC231S KRC235S

    PBSS4140

    Abstract: PBSS4140T 417 278
    Text: PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ․Low collector-emitter saturation voltage ․High current capabilities ․Improved device reliability due to reduced heat generation. APPLICATIONS ․General purpose switching and muting ․LCD backlighting


    Original     		PDF PBSS4140T Tamb25OC Tamb25 100mA, 500mA, 100mA 100MHz PBSS4140 PBSS4140T 417 278

    PBSS4140T

    Abstract: PBSS4140 417 278
    Text: PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capabilities ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙General purpose switching and muting ˙LCD backlighting


    Original     		PDF PBSS4140T Tamb25OC Tamb25 100mA, 500mA, 100mA 100MHz PBSS4140T PBSS4140 417 278

    2SA1954

    Abstract: HN7G04FU RN1307
    Text: HN7G04FU TOSHIBA Multichip Discrete Device HN7G04FU General-Purpose Amplifier Applications Unit: mm Driver Circuit Applications Switching and Muting Switch Applications Q1: 2SA1954 equivalent Q2: RN1307 equivalent Q1 Maximum Ratings Ta = 25°C Characteristic


    Original     		PDF HN7G04FU 2SA1954 RN1307 HN7G04FU

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ・With Built-in Bias Resistors. ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF KRC231M KRC235M KRC231M KRC232M KRC234M KRC233M -50mA, 100MHz

    PBSS4140T

    Abstract: No abstract text available
    Text: ST PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capabilities ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙General purpose switching and muting ˙LCD backlighting


    Original     		PDF PBSS4140T Tamb25 100mA, 500mA, 100mA 100MHz tp300s PBSS4140T

    2SA1954

    Abstract: HN7G04FU RN1307
    Text: HN7G04FU TOSHIBA Multichip Discrete Device HN7G04FU General-Purpose Amplifier Applications Unit: mm Driver Circuit Applications Switching and Muting Switch Applications Q1: 2SA1954 equivalent Q2: RN1307 equivalent Q1 Absolute Maximum Ratings Ta = 25°C Characteristic


    Original     		PDF HN7G04FU 2SA1954 RN1307 HN7G04FU

    2SC5974A

    Abstract: MUTING AND SWITCHING APPLICATION
    Text: 〈 SMALL-SIGNAL TRANSISTOR〉 2SC5974A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm ISAHAYA 2SC5974A is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application


    Original     		PDF 2SC5974A 2SC5974A MUTING AND SWITCHING APPLICATION

    PBSS4140T

    Abstract: No abstract text available
    Text: ST PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capabilities ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙General purpose switching and muting ˙LCD backlighting


    Original     		PDF PBSS4140T Tamb25 100mA, 500mA, 100mA 100MHz tp300s PBSS4140T

    2SA1955FV

    Abstract: No abstract text available
    Text: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 Characteristics Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage


    Original     		PDF 2SA1955FV 2SA1955FV

    2SA1954

    Abstract: HN7G04FU RN1307
    Text: HN7G04FU TOSHIBA Multichip Discrete Device HN7G04FU General-Purpose Amplifier Applications Unit: mm Driver Circuit Applications Switching and Muting Switch Applications Q1: 2SA1954 equivalent Q2: RN1307 equivalent Q1 Absolute Maximum Ratings Ta = 25°C Characteristic


    Original     		PDF HN7G04FU 2SA1954 RN1307 HN7G04FU

    2SC5376FV

    Abstract: sat 1205
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) 1.2±0.05 0.32±0.05 Low Collector Saturation Voltage: 0.22±0.05 •


    Original     		PDF 2SC5376FV 2SC5376FV sat 1205

    NPN Silicon Epitaxial Planar Transistor

    Abstract: No abstract text available
    Text: MMBTRC231S.MMBTRC234S NPN Silicon Epitaxial Planar Transistor For switching, audio muting, interface circuit and driver circuit applications Collector Base R1 Emitter Absolute Maximum Ratings Ta = 25 OC Parameter SOT-23 Plastic Package Symbol Value Unit


    Original     		PDF MMBTRC231S. MMBTRC234S OT-23 MMBTRC231S MMBTRC233S NPN Silicon Epitaxial Planar Transistor

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. A B O F FEATURES H ・With Built-in Bias Resistors. M G ・Simplify Circuit Design.


    Original     		PDF KRC231M KRC235M KRC232M KRC233M KRC234M KRC235M -50mA, 100MHz

    isahaya

    Abstract: 2SC5974B
    Text: 〈 SMALL-SIGNAL TRANSISTOR〉 2SC5974B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm ISAHAYA 2SC5974B is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application


    Original     		PDF 2SC5974B 2SC5974B isahaya

    isahaya

    Abstract: 2SC5974
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5974 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit : mm ISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application


    Original     		PDF 2SC5974 2SC5974 isahaya

    2SC5376FV

    Abstract: No abstract text available
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage


    Original     		PDF 2SC5376FV 2SC5376FV

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA2018 PNP Silicon Epitaxial Planar Transistor Low Frequency Transistor for switching and muting applications. Features: •A collector current is large. •Collector saturation voltage is low. SOT-23 Plastic Package -VCE sat : 250mV(Max.) at -IC=200mA/-IB=10mA


    Original     		PDF MMBTSA2018 OT-23 250mV 200mA/-IB 200mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •


    Original     		PDF 2SA1954 SC-70

    Untitled

    Abstract: No abstract text available
    Text: 0 O Optical disc ICs Muting 1C for portable CD players o (0 CO o Q. O BA3124F The BA3124F is an IC developed for line output muting in portable CD players, and uses control pin switching to achieve line muting and to eliminate the dull thump that occurs when the power is turned on or off.


    OCR Scan     		PDF BA3124F BA3124F

    marking FA

    Abstract: 2SC5233
    Text: TOSHIBA 2SC5233 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5233 GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current VCE (sat) (D = 15mV (TyP-) @ Iq = 10mA / Ig = 0.5mA


    OCR Scan     		PDF 2SC5233 500mA SC-70 marking FA 2SC5233