Untitled
Abstract: No abstract text available
Text: TOKEN XT MW Double Type Trap Filters Ceramic Double Trap Filters 4.5 MHz ~ 6.5 MHz XT MW Ceramic Double Trap Filters Murata TPWA Series Compatible Preview Trap filter is a ceramic filter passes only particular frequency. To the contrary, Band Eliminate Filter (B. E. F.) which
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30dBAttenuation
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GRM1882C1H5R0CZ01D
Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V
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AN-UHF-111
RD00HVS1
RD02MUS1B
400-470MHz,
470MHz.
RD00HVS1:
RD02MUS1B:
103AJ-G"
400MHz
470MHz,
GRM1882C1H5R0CZ01D
GRM1882C1H101JA01D
GRM188R11H102KA01D
capasitor 6.5v .14 f
RPC05-101J
GRM1882C1H5R0C
grm188r11h
GRM1882C1H150JA01D
RPC05-0R0
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GRM2162C
Abstract: GRM2162C1H100FD01E GRM2162C1H110GD01E GRM2162C1H150GD01E GRM2162C1H4R0CD01E GRM2162C1H5R0CD01E GRM2162C1H680GD01E GRM216R11H223KA01E RD00HVS1 30t60
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-076-A Date : 29th Jun. 2006 Rev. Date :22th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V
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AN-UHF-076-A
RD00HVS1
450-470MHz
RD00HVS1:
450MHz
460MHz
470MHz
C1H100FD01E
GRM2162C1H680GD01E
GRM2162C
GRM2162C1H100FD01E
GRM2162C1H110GD01E
GRM2162C1H150GD01E
GRM2162C1H4R0CD01E
GRM2162C1H5R0CD01E
GRM2162C1H680GD01E
GRM216R11H223KA01E
30t60
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gp 722
Abstract: 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-036-A Date : 11th Jul 2006 Rev. date : 22 th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani RD00HVS1 RF characteristics data at f=150-162MHz,Vdd=7.2V SUBJECT: SUMMARY: This application note shows the RF characteristics Frequency Characteristics and Pin vs. Pout
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AN-VHF-036-A
RD00HVS1
150-162MHz
RD00HVS1:
150MHz
156MHz
162MHz
c72JB
CR1/10-241JB
gp 722
4006C
Hokuriku Electric Industry
GRM2162C1H200GD01E
GRM2162C1H240GD01E
GRM2162C1H680GD01E
GRM2163C1H3R0CD01E
GRM2164C1H2R0CD01E
GRM216R11H102KA01E
GRM216R11H223KA01E
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GRM1882C1H
Abstract: RD01MUS2 GRM1882C1H150JA01 Single-Stage amplifier GRM1882C1H102JA01 4005A
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-087-A Date : 9th Oct. 2007 Rev. Date :22th Jun. 2010 Prepared : H.Sakairi S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS2 Single-Stage amplifier RF performance at f= 450-527MHz
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AN-UHF-087-A
RD01MUS2
450-527MHz
RD01MUS2:
RD01MUS2
GRM1882C1H
GRM1882C1H150JA01
Single-Stage amplifier
GRM1882C1H102JA01
4005A
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DIODE T3D 9D
Abstract: No abstract text available
Text: LM27341 , LM27342 , LM27341-Q1 , LM27342-Q1 www.ti.com SNVS497E – NOVEMBER 2008 – REVISED APRIL 2013 LM27341/LM27342/LM27341-Q1/LM27342-Q1 2 MHz 1.5A/2A Wide Input Range Step-Down DC-DC Regulator with Frequency Synchronization Check for Samples: LM27341 , LM27342 , LM27341-Q1 , LM27342-Q1
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LM27341
LM27342
LM27341-Q1
LM27342-Q1
SNVS497E
LM27341/LM27342/LM27341-Q1/LM27342-Q1
DIODE T3D 9D
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Automobile Black Box
Abstract: Power Bank Freescale ACT2801 ACT2802 ACT8945A Atmel ACT8865 power management units high power
Text: 3Q 2014 Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4
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ACT2801
ACT2801C
ACT2802
ACT2802B
Automobile Black Box
Power Bank
Freescale
ACT8945A
Atmel
ACT8865
power management units
high power
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Untitled
Abstract: No abstract text available
Text: SN820X Wi-Fi Network Controller Module Family User Manual Version: 2.2 March 3, 2014 Note: Murata Electronics N.A, Inc Murata reserves the right to make changes in specifications at any time and without notice. The information furnished in this data sheet is believed to be accurate and reliable. However, no responsibility is
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SN820X
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MUC10A
Abstract: CDRHD5D28RHPNP
Text: LM27341,LM27342 LM27341/LM27342/LM27341Q/LM27342Q 2 MHz 1.5A/2A Wide Input Range Step-Down DC-DC Regulator with Frequency Synchronization Literature Number: SNVS497D February 9, 2010 2 MHz 1.5A/2A Wide Input Range Step-Down DC-DC Regulator with Frequency Synchronization
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LM27341
LM27342
LM27341/LM27342/LM27341Q/LM27342Q
SNVS497D
LM27341/LM27342/
LM27341Q/LM27342Q
LM27342
10-pin
MUC10A
CDRHD5D28RHPNP
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J40-5
Abstract: FET J134 A113 A114 A115 AN1955 AN1977 AN1987 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
MHVIC915NR2
J40-5
FET J134
A113
A114
A115
AN1955
AN1977
AN1987
C101
JESD22
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
IS-95
MHVIC915R2
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GRM40X7R103J050BD
Abstract: J422 RM73B2AT104J j392 FET J134
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
IS-95
MHVIC915R2
GRM40X7R103J050BD
J422
RM73B2AT104J
j392
FET J134
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 8, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
IS-95
MHVIC915NR2
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
MHVIC915NR2
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Murata grm40
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
MHVIC915R2
Murata grm40
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NESG250134
Abstract: NESG250134-AZ NESG250134-T1-AZ
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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ACT2813
Abstract: No abstract text available
Text: ACT2813 Demo Board Application Report Rev 0, 12-Mar-2015 Dedicated 5V/2.4A Power Bank Solution FEATURES 2.4A battery charge current 5V/2.4A boost output current 5.0V+/- 100mV output voltage Single chip integration solution with minimal component count
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ACT2813
12-Mar-2015
100mV
10mA-3000mA
ACT2813:
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lqh43pn100mr0
Abstract: GRM188R61A475K recommended TOKO inductors for TPS61170 murata filter tps SLVA319 SLVS789 BCM6
Text: TPS61170 SLVS789C – NOVEMBER 2007 – REVISED APRIL 2011 www.ti.com 1.2A High Voltage Boost Converter in 2x2mm2 QFN Package Check for Samples: TPS61170 FEATURES 1 • • • • • • • • • • DESCRIPTION 3-V to 18-V Input Voltage Range High Output Voltage: Up to 38 V
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TPS61170
SLVS789C
TPS61170
lqh43pn100mr0
GRM188R61A475K
recommended TOKO inductors for TPS61170
murata filter tps
SLVA319
SLVS789
BCM6
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Untitled
Abstract: No abstract text available
Text: TPS61170 SLVS789C – NOVEMBER 2007 – REVISED APRIL 2011 www.ti.com 1.2A High Voltage Boost Converter in 2x2mm2 QFN Package Check for Samples: TPS61170 FEATURES 1 • • • • • • • • • • DESCRIPTION 3-V to 18-V Input Voltage Range High Output Voltage: Up to 38 V
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TPS61170
SLVS789C
TPS61170
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Untitled
Abstract: No abstract text available
Text: TPS61170-Q1 SLVSAX2 – SEPTEMBER 2011 www.ti.com 2 1.2A High Voltage Boost Converter in 2x2mm QFN Package Check for Samples: TPS61170-Q1 FEATURES 1 • • • • • • • • • • • DESCRIPTION Qualified for Automotive Applications 3-V to 18-V Input Voltage Range
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TPS61170-Q1
TPS61170-Q1
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GRM188R61E474K
Abstract: LQH3NPN100NM0 TPS61160ADRVR
Text: TPS61160A TPS61161A www.ti.com. SLVS937 – MARCH 2009 White LED Driver With PWM Brightness Control in 2mm x 2mm
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TPS61160A
TPS61161A
SLVS937
TPS61160A)
TPS61161A)
200mV
TPS61160A/61A
GRM188R61E474K
LQH3NPN100NM0
TPS61160ADRVR
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marking OBV
Abstract: No abstract text available
Text: TPS61160A TPS61161A www.ti.com. SLVS937 – MARCH 2009 White LED Driver With PWM Brightness Control in 2mm x 2mm
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TPS61160A
TPS61161A
SLVS937
TPS61160A)
TPS61161A)
200mV
TPS61160A/61A
marking OBV
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bcm62
Abstract: No abstract text available
Text: TPS61170 SLVS789C – NOVEMBER 2007 – REVISED APRIL 2011 www.ti.com 1.2A High Voltage Boost Converter in 2x2mm2 QFN Package Check for Samples: TPS61170 FEATURES 1 • • • • • • • • • • DESCRIPTION 3-V to 18-V Input Voltage Range High Output Voltage: Up to 38 V
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TPS61170
SLVS789C
TPS61170
bcm62
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