MUR10005CT THRU MUR10020CTR Search Results

MUR10005CT THRU MUR10020CTR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPD4164K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K		Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30
MP-5TRJ12EXTE-007		Amphenol Cables on Demand	Amphenol MP-5TRJ12EXTE-007 Modular Extension Cable, Straight-Thru, RJ12 7ft	Datasheet
MP-5FRJ11STWS-014		Amphenol Cables on Demand	Amphenol MP-5FRJ11STWS-014 Flat Silver Satin Modular Straight-Thru Cables, RJ11 / RJ11 14ft	Datasheet
MP-5FRJ12STWS-025		Amphenol Cables on Demand	Amphenol MP-5FRJ12STWS-025 Flat Silver Satin Modular Straight-Thru Cables, RJ12 / RJ12 25ft	Datasheet

MUR10005CT THRU MUR10020CTR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MUR10005CT thru MUR10020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 100 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	MUR10005CT MUR10020CTR MUR10005CT MUR10010CT MUR10020CT 400unless	PDF
Untitled Abstract: No abstract text available Text: MUR10005CT thru MUR10020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 100 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	MUR10005CT MUR10020CTR MUR10005CT MUR10010CT MUR10020CT	PDF
MUR10005CT thru MUR10020CTR Abstract: No abstract text available Text: Naina Semiconductor Ltd. MUR10005CT thru MUR10020CTR Super Fast Recovery Diode, 100A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified	Original	MUR10005CT MUR10020CTR MUR10010CT MUR10020CT MUR10005CT thru MUR10020CTR	PDF
Untitled Abstract: No abstract text available Text: MUR10005CT thru MUR10020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 200 V IF AV = 100 A Features • High Surge Capability • Types from 50 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)	Original	MUR10005CT MUR10020CTR MUR10010CT MUR10020CT	PDF