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    MUR10005CT THRU MUR10020CTR Search Results

    MUR10005CT THRU MUR10020CTR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    MP-5TRJ12EXTE-007 Amphenol Cables on Demand Amphenol MP-5TRJ12EXTE-007 Modular Extension Cable, Straight-Thru, RJ12 7ft Datasheet
    MP-5FRJ11STWS-014 Amphenol Cables on Demand Amphenol MP-5FRJ11STWS-014 Flat Silver Satin Modular Straight-Thru Cables, RJ11 / RJ11 14ft Datasheet
    MP-5FRJ12STWS-025 Amphenol Cables on Demand Amphenol MP-5FRJ12STWS-025 Flat Silver Satin Modular Straight-Thru Cables, RJ12 / RJ12 25ft Datasheet

    MUR10005CT THRU MUR10020CTR Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MUR10005CT thru MUR10020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 100 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    PDF MUR10005CT MUR10020CTR MUR10005CT MUR10010CT MUR10020CT 400unless

    Untitled

    Abstract: No abstract text available
    Text: MUR10005CT thru MUR10020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 600 V IF = 100 A Features • High Surge Capability • Types up to 600 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    PDF MUR10005CT MUR10020CTR MUR10005CT MUR10010CT MUR10020CT

    MUR10005CT thru MUR10020CTR

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. MUR10005CT thru MUR10020CTR Super Fast Recovery Diode, 100A Features • • • • • Dual Diode Construction Low Leakage Current Low forward voltage drop High surge current capability Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original
    PDF MUR10005CT MUR10020CTR MUR10010CT MUR10020CT MUR10005CT thru MUR10020CTR

    Untitled

    Abstract: No abstract text available
    Text: MUR10005CT thru MUR10020CTR Silicon Super Fast Recovery Diode VRRM = 50 V - 200 V IF AV = 100 A Features • High Surge Capability • Types from 50 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original
    PDF MUR10005CT MUR10020CTR MUR10010CT MUR10020CT