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    Rochester Electronics LLC MTP8N50E

    N-CHANNEL POWER MOSFET
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    DigiKey MTP8N50E Bulk 746 245
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    Motorola Semiconductor Products MTP8N50E

    MOSFET Transistor, N-Channel, TO-220AB
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    Quest Components MTP8N50E 8
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    MTP8N50E 5
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    MTP8N50E 1
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    onsemi MTP8N50E

    Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 '
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    Rochester Electronics MTP8N50E 746 1
    • 1 $1.24
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    MTP8N50E Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MTP8N50E Motorola TMOS E-FET Power Field Effect Transistor Original PDF
    MTP8N50E On Semiconductor TMOS E-FET Power Field Effect Transistor Original PDF
    MTP8N50E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP8N50E Unknown FET Data Book Scan PDF
    MTP8N50E On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 500V, 4A, Pkg Style TO220Ab Scan PDF
    MTP8N50E/D On Semiconductor TMOS POWER FET 8.0 AMPERES 500 VOLTS Original PDF
    MTP8N50E-D On Semiconductor TMOS E-FET Power Field Effect Transistor N-Channel Original PDF

    MTP8N50E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NT 407 F MOSFET TRANSISTOR

    Abstract: MTP8N50E TMOS E-FET
    Text: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP8N50E N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without


    Original     		PDF MTP8N50E/D MTP8N50E NT 407 F MOSFET TRANSISTOR MTP8N50E TMOS E-FET

    MTP8N50E

    Abstract: No abstract text available
    Text: TMOS E-FET. Power Field Effect Transistor MTP8N50E N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is


    Original     		PDF MTP8N50E r14525 MTP8N50E/D MTP8N50E

    MTP8N50E

    Abstract: No abstract text available
    Text: TMOS E−FET. Power Field Effect Transistor MTP8N50E N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is


    Original     		PDF MTP8N50E r14525 MTP8N50E/D MTP8N50E

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP8N50E TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF MTP8N50E O-220AB

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    SO20N

    Abstract: MTP6N50E MTP8N50E SO16N, SOIC Package free 1N4148 mtp6n50 passive resonant snubber MC33157 MC33157DW MC33260
    Text: Order this publication as PBMC33157/D Semiconductor Components Group Analog, Logic and Discretes 20-July-1999 ides or v o r lf rP o e r l t l n ntro cy Co o C ge uen allasts d q i r e r B F pB Half he-Art m a L of-t escent e t r Sta Fluo Introduction The MC33157 is a half bridge controller and driver designed specifically


    Original     		PDF PBMC33157/D 20-July-1999 MC33157 SO20N MTP6N50E MTP8N50E SO16N, SOIC Package free 1N4148 mtp6n50 passive resonant snubber MC33157DW MC33260

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    zvt boost converter

    Abstract: uc3855 Application Note D4602 500w power amplifier circuit diagram schematic 500w power amplifier circuit diagram SATURABLE CORE Saturable Core Square Wave Oscillator SEM-400 95160 UC3855 8 pin
    Text: U-153 UNITRODE CORPORATION UC3855A/B HIGH PERFORMANCE POWER FACTOR PREREGULATOR James P. Noon New Product Applications Engineer INTRODUCTION The trend in power converters is towards increasingly higher power densities. Usually, the method to achieve this is to increase the switching frequency,


    Original     		PDF U-153 UC3855A/B 100kHz. zvt boost converter uc3855 Application Note D4602 500w power amplifier circuit diagram schematic 500w power amplifier circuit diagram SATURABLE CORE Saturable Core Square Wave Oscillator SEM-400 95160 UC3855 8 pin

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
    Text: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic


    Original     		PDF AN1543/D AN1543 AN1543/D* transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D

    Epcos n67 material

    Abstract: AND8016 ac to dc pfc boost converter 500w smps 500w half bridge PFC buck converter design 10000w power supply APPLICATION DIODE 1N5406 bridge rectifier using the diode 1N4007 circuit f MC33260 application smps 500W
    Text: AND8016/D Design of Power Factor Correction Circuit Using Greenline  Compact Power Factor Controller MC33260 http://onsemi.com Prepared by Ming Hian Chew ON Semiconductor Analog Applications Engineering APPLICATION NOTE Introduction The MC33260 is an active power factor controller that


    Original     		PDF AND8016/D MC33260 MC33260 r14153 Epcos n67 material AND8016 ac to dc pfc boost converter 500w smps 500w half bridge PFC buck converter design 10000w power supply APPLICATION DIODE 1N5406 bridge rectifier using the diode 1N4007 circuit f MC33260 application smps 500W

    MC33368

    Abstract: EE25 transformer EE42 core EE42/15 1N4006 1N4744 1N4934 MC33368D MC33368DR2 MC33368P
    Text: MC33368 High Voltage GreenLine Power Factor Controller http://onsemi.com MARKING DIAGRAMS 16 DIP–16 P SUFFIX CASE 648 16 MC33368P AWLYYWW 1 16 1 SO–16 D SUFFIX CASE 751K 16 1 A WL YY, Y WW MC33368D AWLYWW 1 = Assembly Location = Wafer Lot = Year = Work Week


    Original     		PDF MC33368 MC33368 r14525 MC33368/D EE25 transformer EE42 core EE42/15 1N4006 1N4744 1N4934 MC33368D MC33368DR2 MC33368P

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		PDF smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V

    1N4006

    Abstract: 1N4744 1N4934 MC33368 MC33368D MC33368P MTP8N50E MUR130 Motorola BOOST smps 4023 nOR gate
    Text: Order this document by MC33368/D MC33368 Advance Information High Voltage GreenLine Power Factor Controller The MC33368 is an active power factor controller that functions as a boost preconverter in off–line power supply applications. MC33368 is optimized for low power, high density power supplies requiring a minimum


    Original     		PDF MC33368/D MC33368 MC33368 1N4006 1N4744 1N4934 MC33368D MC33368P MTP8N50E MUR130 Motorola BOOST smps 4023 nOR gate

    1n5406 MOTOROLA

    Abstract: No abstract text available
    Text: MC33368 Advance Information High Voltage GreenLine Power Factor Controller HIGH VOLTAGE GREENLINE POWER FACTOR CONTROLLER The MC33368 is an active power factor controller that functions as a boost preconverter in off–line power supply applications. MC33368 is


    Original     		PDF MC33368 MC33368 1n5406 MOTOROLA

    EE42 core

    Abstract: EE42 SWITCHING POWER TRANSFORMER EE42/15 ac step-up transformer winding awg MC33368-D transformer ee4215 505 transistor MC33368D EE25 transformer MC33368P
    Text: MC33368 High Voltage GreenLine Power Factor Controller http://onsemi.com MARKING DIAGRAMS 16 DIP–16 P SUFFIX CASE 648 16 MC33368P AWLYYWW 1 16 1 SO–16 D SUFFIX CASE 751K 16 1 A WL YY, Y WW MC33368D AWLYWW 1 = Assembly Location = Wafer Lot = Year = Work Week


    Original     		PDF MC33368 MC33368 r14525 MC33368/D EE42 core EE42 SWITCHING POWER TRANSFORMER EE42/15 ac step-up transformer winding awg MC33368-D transformer ee4215 505 transistor MC33368D EE25 transformer MC33368P

    NTP3055AV

    Abstract: NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent
    Text: PRODUCT / PROCESS CHANGE NOTIFICATION UPDATE Generic Copy 08-DEC-2000 SUBJECT: Update Notification #10395 TITLE: Modification To PCN #10344 EFFECTIVE DATE: 17-Mar-2001 AFFECTED CHANGE CATEGORY S : Subcontractor Assembly Site Subcontractor Test Site Assembly Process


    Original     		PDF 08-DEC-2000 17-Mar-2001 S21431 RYFV70 MTB8N50E MTB8N50ET4 MTP10N10E MTP10N10EL MTP10N40E MTP12N10E NTP3055AV NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast
    Text: AN1543/D Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse http://onsemi.com APPLICATION NOTE ABSTRACT c. Assure that the circuit will remain stable, even under fault conditions.


    Original     		PDF AN1543/D r14525 transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast

    N-Channel JFET FETs

    Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
    Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are


    Original     		PDF O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP8N50E TMOS E-FET ™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n


    OCR Scan     		PDF MTP8N50E/D TP8N50E

    221A-06

    Abstract: AN569 MTP8N50E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP8N50E N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS on = °-8 OHM T h is a d va n ce d high vo lta g e T M O S E -F E T is d e sig n e d to


    OCR Scan     		PDF

    MTA5N50E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA5N50E Fully Isolated T M O S E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an ad v a n c e d te rm in a tio n


    OCR Scan     		PDF MTA5N50E AN1040. b3b725M MTA5N50E