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    MTP23P06V Price and Stock

    onsemi MTP23P06V

    MOSFET P-CH 60V 23A TO220AB
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    DigiKey MTP23P06V Tube 50
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    onsemi MTP23P06VG

    MOSFET P-CH 60V 23A TO220AB
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    Quest Components MTP23P06VG 32
    • 1 $2.5
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    MTP23P06VG 1
    • 1 $2.8648
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    ComSIT USA MTP23P06VG 42
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    Motorola Semiconductor Products MTP23P06V

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    Quest Components MTP23P06V 1
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    MTP23P06V Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP23P06V Motorola TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM Original PDF
    MTP23P06V On Semiconductor Power MOSFET 23 Amps, 60 Volts; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Original PDF
    MTP23P06V On Semiconductor Power MOSFET 23 A, 60 V Original PDF
    MTP23P06V Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP23P06V/D On Semiconductor TMOS POWER FET 23 AMPERES 60 VOLTS Original PDF
    MTP23P06V-D On Semiconductor Power MOSFET 23 Amps, 60 Volts P-Channel TO-220 Original PDF
    MTP23P06VG On Semiconductor Power MOSFET 23 Amps, 60 Volts; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Original PDF

    MTP23P06V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    23P06

    Abstract: MTP23P06V
    Text: MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP23P06V MTP23P06V/D 23P06 MTP23P06V

    MTP23P06V

    Abstract: AN569
    Text: MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP23P06V r14525 MTP23P06V/D MTP23P06V AN569

    diode 12 volts 250 watts

    Abstract: No abstract text available
    Text: MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP23P06V O-220 MTP23P06V/D diode 12 volts 250 watts

    23p06v

    Abstract: MTP23P06VG 23p06 23P06VG MTP23P06V AN569
    Text: MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP23P06V O-220 MTP23P06V/D 23p06v MTP23P06VG 23p06 23P06VG MTP23P06V AN569

    TMOS E-FET

    Abstract: AN569 MTP23P06V
    Text: MOTOROLA Order this document by MTP23P06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP23P06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 23 AMPERES 60 VOLTS RDS on = 0.120 OHM


    Original     		PDF MTP23P06V/D MTP23P06V MTP23P06V/D* TMOS E-FET AN569 MTP23P06V

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		PDF smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V

    DIODE 709 1334

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010/D MRFG35010 MRFG35010 MRFG35010/D DIODE 709 1334

    3224W-1-502E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010/D MRFG35010 MRFG35010 3224W-1-502E

    IRL 724 N

    Abstract: MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010 MRFG35010R1 IRL 724 N MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103

    INF 740

    Abstract: Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010R1 MRFG35010
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 replaced by MRFG35010AR1. MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010 MRFG35010R1 MRFG35010AR1. MRFG35010R1 360HF INF 740 Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    NTP3055AV

    Abstract: NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent
    Text: PRODUCT / PROCESS CHANGE NOTIFICATION UPDATE Generic Copy 08-DEC-2000 SUBJECT: Update Notification #10395 TITLE: Modification To PCN #10344 EFFECTIVE DATE: 17-Mar-2001 AFFECTED CHANGE CATEGORY S : Subcontractor Assembly Site Subcontractor Test Site Assembly Process


    Original     		PDF 08-DEC-2000 17-Mar-2001 S21431 RYFV70 MTB8N50E MTB8N50ET4 MTP10N10E MTP10N10EL MTP10N40E MTP12N10E NTP3055AV NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent

    CS5170

    Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
    Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original     		PDF SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    motorola ZENER diode 1n751a

    Abstract: zener diode 18V 1W, 5 philips fenwal 78L05ACZ 1n4148 zener diode PHILIPS ntc 2322 640 5 tco thermistor motorola make 1N751A ZENER 1N4148 Fast Switching Diode Keystone RL0703-5744-103-S1
    Text: DV2003S1 Fast Charge Development System Control of On-Board P-FET Switch-Mode Regulator Features ➤ bq2003 fast-charge control evaluation and development ➤ Charge current sourced from an on-board switch-mode regulator up to 3.0 A ➤ Fast charge of 2 to 16 NiCd or NiMH cells


    Original     		PDF DV2003S1 bq2003 motorola ZENER diode 1n751a zener diode 18V 1W, 5 philips fenwal 78L05ACZ 1n4148 zener diode PHILIPS ntc 2322 640 5 tco thermistor motorola make 1N751A ZENER 1N4148 Fast Switching Diode Keystone RL0703-5744-103-S1

    SLUS156

    Abstract: DV2031S2 bq2031 sbl845di SLUA017 Philips 2322-640-63103 philips thermistor 2322 640 bq2031 charger schematic SLUU023A
    Text: DV2031S2 Lead-Acid Charger Development System Control of On-Board P-FET Switch-Mode Regulator The DV2031S2 can be configured for three different charge algorithms with jumpers JP1 and JP3. The charge algorithms available are Features ä bq2031 fast-charge control evaluation and


    Original     		PDF DV2031S2 DV2031S2 bq2031 SLUS156 sbl845di SLUA017 Philips 2322-640-63103 philips thermistor 2322 640 bq2031 charger schematic SLUU023A

    D1N4002

    Abstract: coil design and construction manual babani D1N4002 diode babani MTW14N50 DIODE D1N4002 1 microhenry inductor series and parallel RLC circuit datasheet coil inductor inductor coils
    Text: M AN677 Designing a Base Station Coil for the HCS410 INTRODUCTION Author: Mike Sonnabend, Jan van Niekerk Microchip Technology Inc. OVERVIEW This application note describes the Excel spreadsheet to design base station coils. The spreadsheet file name is basestaxls.


    Original     		PDF AN677 HCS410 D1N4002 coil design and construction manual babani D1N4002 diode babani MTW14N50 DIODE D1N4002 1 microhenry inductor series and parallel RLC circuit datasheet coil inductor inductor coils

    D 4206 TRANSISTOR

    Abstract: 7402 motorola DIODE MOTOROLA 633 motorola 549 diode Motorola 581 MA8051CT-ND 3-063 motorola 731 motorola 901 704 16 08 55 transistor motorola 236
    Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010/D MRFG35010 D 4206 TRANSISTOR 7402 motorola DIODE MOTOROLA 633 motorola 549 diode Motorola 581 MA8051CT-ND 3-063 motorola 731 motorola 901 704 16 08 55 transistor motorola 236

    ST 082C

    Abstract: motorola ZENER diode 1n751a thermistor 103AT ntc BD-9623 1N749 1N755 1N758 1N964A 1N966A 1N967A
    Text: DV2004S1/ES1/HS1 Fast-Charge Development System Control of On-Board p-FET Switch-Mode Regulator Features ä bq2004/E/H fast charge control evaluation and development ä Charge current sourced from an on-board switch-mode regulator up to 3.0 A ä Fast charge of 4 to 10 NiCd or NiMH cells and one


    Original     		PDF DV2004S1/ES1/HS1 bq2004/E/H ST 082C motorola ZENER diode 1n751a thermistor 103AT ntc BD-9623 1N749 1N755 1N758 1N964A 1N966A 1N967A

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    mosfet 4842

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA D esigner's Data Sheet MTP23P06V TMOSV™ Power Field Effect Transistor Motorola Preferred D*vlca P-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about on e-ha lf that of standard MOSFETs. This


    OCR Scan     		PDF MTP23P06V 0E-05 0E-04 0E-03 0E-02 0E-01 mosfet 4842