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    MTBF IGBT FIT Search Results

    MTBF IGBT FIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MTBF IGBT FIT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    infineon mtbf

    Abstract: MTBF IGBT MTBF IGBT fit igbt failure fit mtbf infineon igbt infineon 10000Fit igbt failure igbt failure rate
    Text: APPLICATION NOTE Page 1 von 2 Definition of FIT and MTBF A failure rate λ=is defined by the number of failures r during a specific test time t of n components: λ= r n ⋅t The unit for failure rates is 1 fit failures in time = 1*10-9h-1, meaning one failure in 109 operation hours of the device.


    Original     		10-9h-1, 5000h infineon mtbf MTBF IGBT MTBF IGBT fit igbt failure fit mtbf infineon igbt infineon 10000Fit igbt failure igbt failure rate PDF

    MTBF IGBT module

    Abstract: MTBF IGBT fit IEC60749 igbt failure AN5945-3 igbt qualification circuit igbt testing procedure ge traction motor igbt module testing IEC60068-2-14 vibration
    Text: AN 5945 IGBT Module Reliability Application Note AN5945-3 October 2009 LN26894 Authors: Dinesh Chamund, David Newcombe INTRODUCTION: Dynex Semiconductor products are used in a variety of power electronics systems such as power generation and distribution systems,


    Original     		AN5945-3 LN26894 MTBF IGBT module MTBF IGBT fit IEC60749 igbt failure igbt qualification circuit igbt testing procedure ge traction motor igbt module testing IEC60068-2-14 vibration PDF

    advantage and disadvantage of igbt

    Abstract: failure analysis IGBT Calculation of major IGBT operating parameters IEC60749-5 igbt failure fit IEC60749 MTBF IGBT fit IEC60068-2-14 IEC60068-2-27 IEC60068-2-6
    Text: AN 5945 IGBT Module Reliability Application Note AN5945-5 October 2010 LN27638 Authors: Dinesh Chamund, David Newcombe INTRODUCTION: Dynex Semiconductor products are used in a variety of power electronics systems such as power generation and distribution systems,


    Original     		AN5945-5 LN27638 advantage and disadvantage of igbt failure analysis IGBT Calculation of major IGBT operating parameters IEC60749-5 igbt failure fit IEC60749 MTBF IGBT fit IEC60068-2-14 IEC60068-2-27 IEC60068-2-6 PDF

    igd507an

    Abstract: IGD*507 IGD515EI ihd680an IGD507 MTBF IGBT AN-9701E igbt transformer driver IHD280AN intelligent universal transformer
    Text: Intelligent Drivers Overview and Product Information Intelligent Drivers for Power MOSFETs and IGBTs Standard Program Diagram: Various half-bridge drivers from the standard program Internet: www.IGBT-Driver.com Page 1 Intelligent Drivers Overview and Product Information


    Original     		CH-2533 igd507an IGD*507 IGD515EI ihd680an IGD507 MTBF IGBT AN-9701E igbt transformer driver IHD280AN intelligent universal transformer PDF

    universal MOTOR speed control using scr

    Abstract: abstract for universal MOTOR SPEED CONTROL USING IGBT universal MOTOR SPEED CONTROL USING IGBT speed control of 1 phase induction motor by using scr Triac trigger circuit Popular Electronics Magazine, October 1978 triac inductor noise suppression carbon monoxide detector induction motor speed control used triac based ac motor speed control circuit with triac
    Text: Integrating EMI Filters and Appliance Motor Controls Mr. Carl J. Dister LCR Electronics, Inc. 9 South Forest Avenue Norristown, PA 19401 U.S.A. Telephone: 1-800-527-4362 Fax: 610 278-0935 Email: cdister@lcr-inc.com WEB Site: www.lcr-inc.com Carl J. Dister


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Document 561 SMT Gate Drive Transformer •฀ Designed฀for฀transformer฀coupled฀MOSFET฀and฀฀IGBT฀ gate drive circuits; operating frequency: 50 kHz to 2 MHz. •฀ 2250฀Vdc฀primary฀to฀secondary฀isolation •฀ Requires฀only฀56฀mm2 of board space.


    Original     		AN-1521à PDF

    Untitled

    Abstract: No abstract text available
    Text: Document 561 SMT Gate Drive Transformer • Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. • 2250 Vdc primary to secondary isolation • Requires only 56 mm2 of board space. • Specified by National Semiconductor on AN-1521 for their


    Original     		AN-1521 PDF

    FA2659-ALC

    Abstract: SR-332 NATIONAL IGBT igbt gate drive circuits Telcordia SR-332 362 MOSFET
    Text: Document 561 SMT Gate Drive Transformer • Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. • 2250 Vdc primary to secondary isolation • Requires only 56 mm2 of board space. • Specified by National Semiconductor on AN-1521 for their


    Original     		AN-1521 EIA-481 FA2659-ALC SR-332 NATIONAL IGBT igbt gate drive circuits Telcordia SR-332 362 MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.


    Original     		DA2317-AL DA2320-AL, 323max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL PDF

    Untitled

    Abstract: No abstract text available
    Text: Document 561 SMT Gate Drive Transformer • Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. • 2250 Vdc primary to secondary isolation • Requires only 56 mm2 of board space. • Specified by National Semiconductor on AN-1521 for their


    Original     		AN-1521 PDF

    DA2320

    Abstract: DA2320-ALC DA2319-AL DA2320-AL DA2317-AL billion transformer SR-332 da2319
    Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.


    Original     		DA2317-AL DA2320-AL, 323max DA2317-AL, DA2320-AL DA2318-AL, DA2319-AL DA2320 DA2320-ALC DA2319-AL DA2320-AL DA2317-AL billion transformer SR-332 da2319 PDF

    FA2659-AL

    Abstract: FA2659 AN1521 MTBF IGBT fit
    Text: Document 561 SMT Gate Drive Transformer • Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. • 2250 Vdc, one minute primary to secondary isolation • Requires only 56 mm2 of board space. • Specified by National Semiconductor on AN-1521 for their


    Original     		AN-1521 FA2659-AL FA2659 AN1521 MTBF IGBT fit PDF

    Untitled

    Abstract: No abstract text available
    Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.


    Original     		DA2317-AL DA2320-AL, 30parts 323max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL PDF

    Untitled

    Abstract: No abstract text available
    Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.


    Original     		DA2317-AL DA2320-AL, 323max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL PDF

    SKHI22B R

    Abstract: SKHI22B semikron supression capacitor semikron SKHI21 SKHI22A for igbt 600v
    Text: Absolute Maximum Ratings Symbol VS ViH Term Supply voltage prim. Input signal voltage High IoutPEAK IoutAVmax fmax CVE Output peak current Output average current (max.) max. switching frequency Collector-Emitter voltage sense across the IGBT Rate of rise and fall of voltage


    Original     		Visol12 SKHI22B SKPC2006 SKHI21A SKHI22A. SKHI22B R semikron supression capacitor semikron SKHI21 SKHI22A for igbt 600v PDF

    Untitled

    Abstract: No abstract text available
    Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.


    Original     		DA2317-AL DA2320-AL, 303max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL PDF

    Untitled

    Abstract: No abstract text available
    Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.


    Original     		DA2317-AL DA2320-AL, 323max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL PDF

    Untitled

    Abstract: No abstract text available
    Text: Document 512 SMT Gate Drive Transformers •฀ Designed฀ for฀ high฀ switching฀ speed,฀ transformer฀ coupled฀ MOSFET and IGBT gate drive circuits. •฀ Operating฀frequency:฀50฀kHz฀–฀2฀MHz •฀ ฀


    Original     		DA2317-ALà DA2320-AL, DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL PDF

    pactan 5011

    Abstract: pactan Wacker Wacker A33 SKHI22A skhi22b 1000v contactor SKHI21 semikron pulse transformer SKHI22
    Text: Absolute Maximum Ratings Symbol VS ViH Term Supply voltage prim. Input signal voltage High IoutPEAK IoutAVmax fmax CVE Output peak current Output average current (max.) max. switching frequency Collector-Emitter voltage sense across the IGBT Rate of rise and fall of voltage


    Original     		Visol12 SKHI22B SKPC2006 SKHI21A SKHI22A. pactan 5011 pactan Wacker Wacker A33 SKHI22A 1000v contactor SKHI21 semikron pulse transformer SKHI22 PDF

    chopper transformer FOR UPS

    Abstract: pcb diagram welding inverter pactan SKHI 22 A/B H4 R ups circuit diagram using igbt SKHI22B SKHI21 semikron SKHI 22 SKHI 20 SKHI22
    Text: Absolute Maximum Ratings Symbol VS ViH Term Supply voltage prim. Input signal voltage High IoutPEAK IoutAVmax fmax CVE Output peak current Output average current (max.) max. switching frequency Collector-Emitter voltage sense across the IGBT Rate of rise and fall of voltage


    Original     		Visol12 SKHI22B SKPC2006 SKHI21A SKHI22A. chopper transformer FOR UPS pcb diagram welding inverter pactan SKHI 22 A/B H4 R ups circuit diagram using igbt SKHI22B SKHI21 semikron SKHI 22 SKHI 20 SKHI22 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.


    Original     		DA2317-AL DA2320-AL, PDF

    Untitled

    Abstract: No abstract text available
    Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.


    Original     		DA2317-AL DA2320-AL, 323max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL PDF

    MTBF fit IGBT 1200

    Abstract: semikron SKHI 21 SKHI 22 A/B H4 R SKHI 21a driver power modul inverter pactan semikron SKHI 22 pcb diagram welding inverter Semidriver 22A semikron SKHI 24
    Text: SKHI 21 A, SKHI 22 A / B Absolute Maximum Ratings Symbol Term Values Units VS ViH Supply voltage prim. Input signal volt. High IoutPEAK IoutAVmax fmax VCE Output peak current Output average current max. switching frequency Collector emitter voltage sense across the


    Original     		Visol12 SKHI22B SKPC2006 MTBF fit IGBT 1200 semikron SKHI 21 SKHI 22 A/B H4 R SKHI 21a driver power modul inverter pactan semikron SKHI 22 pcb diagram welding inverter Semidriver 22A semikron SKHI 24 PDF

    SKHI21

    Abstract: SKHI22 pcb diagram of mini ups system SKHI22B SKHI22A for igbt 600v semikron SKpc semikron SKpc dual skhi 21 SKPC2006 SKHI22A pactan
    Text: Absolute Maximum Ratings Symbol VS ViH Term Supply voltage prim. Input signal voltage High IoutPEAK IoutAVmax fmax CVE Output peak current Output average current (max.) max. switching frequency Collector-Emitter voltage sense across the IGBT Rate of rise and fall of voltage


    Original     		Visol12 SKHI22B 7720S, SKPC2006 SKHI21 SKHI22 pcb diagram of mini ups system SKHI22B SKHI22A for igbt 600v semikron SKpc semikron SKpc dual skhi 21 SKPC2006 SKHI22A pactan PDF