Untitled
Abstract: No abstract text available
Text: PLASTIC FILM CAPACITORS MTBS, MTB Series Tape Wrapped Metallized Polyester Film Capacitors This series offers metallized film capacitors that have axial leads and exhibit excellent heat resistance and moisture resistance. These capacitors employ a metallized polyester film
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2j104k
Abstract: 2A104K mtb 230 0.33uf j 630v 033 j 630v 2J104
Text: PLASTIC FILM CAPACITORS MTBS, MTB Series Tape Wrapped Metallized Polyester Film Capacitors This series offers metallized film capacitors that have axial leads and exhibit excellent heat resistance and moisture resistance. These capacitors employ a metallized polyester film
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500M26
2j104k
2A104K
mtb 230
0.33uf j 630v
033 j 630v
2J104
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5889
Abstract: OS15
Text: MTA and MTB Series Full-Size 7.3mm or 4.7mm height • Industry Standard Package • 5.0 or 3.3 Volt • HCMOS, Sinewave, Clipped Sine • 1.000MHz to 1.000GHz • Stability Down to ±1ppm Electrical Specifications H Option = HCMOS Output Frequency Range
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000MHz
000GHz
5889
OS15
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3 pin TRIMMER capacitor
Abstract: No abstract text available
Text: MTA and MTB Series ¾ Industry Standard Package ¾ +3.30VDC or +5.00VDC ¾ RoHS Compliant Available ¾ Up to 77.760MHZ ELECTRICAL SPECIFICATIONS: Output Frequency Range Load Supply Current HCMOS Clipped Sinewave Sinewave 1.000 MHZ to 77.760 MHZ 8.000 MHZ to 77.760 MHZ
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30VDC
00VDC
760MHZ
MIL-STD-883,
3 pin TRIMMER capacitor
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Untitled
Abstract: No abstract text available
Text: PLASTIC FILM CAPACITORS MDD-P, MTB-P Series Metallized Polypropylene Film Capacitors for High frequency Product Specifications These types are metallized polypropylene film capacitors that have been used for many years and are suitable for communication devices and inverter
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Untitled
Abstract: No abstract text available
Text: PLASTIC FILM CAPACITORS MDD-P, MTB-P Series Metallized polypropylene film capacitors for high frequency Product Specifications These types are metallized polypropylene film capacitors that have been used for many years and are suitable for communication devices and inverter
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MTB marking
Abstract: No abstract text available
Text: MTB, MTD, MVTB & MVTD Series SMD TCXO & VCTCXO FEATURES Microcom MDL Devices Ltd. Phone: 403-686-1889 Fax: 403-686-1604 www.microcomdevices.com . Surface Mount Packages . Wide Frequency & Temperature. Range . 5V, 3.3V, 3V Operation SPECIFICATIONS subject to change w/o notice
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35MHz
to12ppm
-115dBC/Hz
10KHz/1KHz/100Hz
MVTB5-20
MTB marking
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IXF6151
Abstract: LXT6051 249309 intel date code format
Text: IXF6151 28 T1/E1 Mapper Specification Update January 2001 Notice: The IXF6151 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this specification update.
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IXF6151
IXF6151.
LXT6051
249309
intel date code format
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The 2002 is a COMMON BASE transistor
Abstract: high hfe transistor KRC681T KRC682T KRC683T KRC684T KRC685T KRC686T resistor 4.7 k
Text: SEMICONDUCTOR KRC681T~KRC686T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B FEATURES 1 High emitter-base voltage : VEBO=25V Min G High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) B C 2 F A Low on resistance : Ron=1 (Typ.) (IB=5mA)
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KRC681T
KRC686T
KRC681T
KRC682T
KRC685T
KRC683T
KRC684T
The 2002 is a COMMON BASE transistor
high hfe transistor
KRC682T
KRC683T
KRC684T
KRC685T
KRC686T
resistor 4.7 k
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KRC881T
Abstract: KRC882T KRC883T KRC884T KRC885T KRC886T MTB marking
Text: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K FEATURES 1 6 G 2 5 G High emitter-base voltage : VEBO=25V Min K B 3 4 DIM A B C D E A Low on resistance : Ron=1 (Typ.) (IB=5mA)
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KRC881T
KRC886T
KRC881T
KRC882T
KRC885T
KRC883T
KRC884T
KRC882T
KRC883T
KRC884T
KRC885T
KRC886T
MTB marking
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K FEATURES 1 6 G 2 5 G High emitter-base voltage : VEBO=25V Min K B 3 4 DIM A B C D E A Low on resistance : Ron=1 (Typ.) (IB=5mA)
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KRC881T
KRC886T
KRC881T
KRC882T
KRC885T
KRC883T
KRC884T
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KRC281S
Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S
Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E B L L High emitter-base voltage : VEBO=25V Min 2 A H With Built-in Bias Resistors. 3 G Low on resistance : Ron=1 (Typ.) (IB=5mA)
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KRC281S
KRC286S
KRC281S
KRC282S
KRC285S
KRC283S
KRC284S
KRC282S
KRC283S
KRC284S
KRC285S
KRC286S
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K 6 G 2 5 3 4 D EQUIVALENT CIRCUIT TOP VIEW I 6 5 1. 2. 3. 4. 5. 6. Q1 Q2 E 1 2 0.95 H I _ 0.05 0.16 + 0.00-0.10 J 0.25+0.25/-0.15
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KRC881T
KRC886T
KRC881T
KRC882T
KRC884T
KRC885T
KRC883T
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Sauro CTM
Abstract: Sauro CIF Sauro msb Sauro CIM CSM 6850 SMC072S045 SMC072 Sauro t011 Sauro Cvf
Text: Product Identification and related Part-Number Produktidentifizierung und entsprechende Artikelnummer To order a SAURO’s product, the Complete Part-Number must be identified. It is composed by a Standard Code and a potential Custom Code. Code structures are indicated in the below diagrams.
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MSBH02001
0000P_
ESA00000000
Sauro CTM
Sauro CIF
Sauro msb
Sauro CIM
CSM 6850
SMC072S045
SMC072
Sauro
t011
Sauro Cvf
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Toggle Switch mta 206pa
Abstract: MTF206TA MTE206PA MTL206N-P MTL306D 8Z0143 MTF406P alco MPn AC1500V MTF406PA
Text: Ｓ GREEN Ｍ Ｔ 照 SWITCH SERIES 光 •はじめに ■Introduction フジソクグリーンスイッチシリーズはMIL、DSP、UL 規格適合品などに代表されるように、当社の蓄積技術と 経験をもとにして、市場のニーズを先取りし端子部の永
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MD8010118
8Z0183
MD8010116
8Z0179
MD8010125
8Z0178
MD8020027
8Z0188
MD8010021
8Z0185
Toggle Switch mta 206pa
MTF206TA
MTE206PA
MTL206N-P
MTL306D
8Z0143
MTF406P
alco MPn
AC1500V
MTF406PA
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20
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KRC281S
KRC286S
OT-23
KRC282S
KRC283S
KRC284S
KRC285S
KRC286S
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KRC281S
Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S MTB marking
Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 C J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20
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KRC281S
KRC286S
KRC281S
KRC282S
KRC285S
KRC283S
KRC284S
KRC282S
KRC283S
KRC284S
KRC285S
KRC286S
MTB marking
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10DB
Abstract: 50DBM 50MHZ
Text: Contents SPECTRUM ANALYZERS 3250 Series EMI Measurement User Manual Document part no. 47090/029 SPECTRUM ANALYZERS 3250 SERIES EMI Measurement User Manual Aeroflex Ltd. 2010 No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying,
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MRB 154
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC681T~KRC686T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)
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KRC681T
KRC686T
KRC682T
KRC683T
KRC684T
KRC685T
KRC686T
MRB 154
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NATIONAL SEMICONDUCTOR MARKING CODE sot
Abstract: national marking code NATIONAL SEMICONDUCTOR MARKING CODE DEVICE MARKING CODE table sot-23 MARKING CODE ZA On semiconductor date Code dpak YEAR A national top marking codes national marking date code national marking code sot sot23 mark code KS
Text: Device Marking Conventions National Semiconductor marks devices sold in order to provide device identification and manufacturing traceablility information. The method of presenting the information marked on the device is dependent on the size of the device package
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CSP-9-111S2)
CSP-9-111S2.
NATIONAL SEMICONDUCTOR MARKING CODE sot
national marking code
NATIONAL SEMICONDUCTOR MARKING CODE
DEVICE MARKING CODE table
sot-23 MARKING CODE ZA
On semiconductor date Code dpak YEAR A
national top marking codes
national marking date code
national marking code sot
sot23 mark code KS
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2j104k
Abstract: H R C M F 2J 225 2A104K MTB-p, hitachi 300-02F
Text: PLASTIC FILM CAPACITORS MTBS, MTB Series Tape Wrapped Metallized Polyester Film Capacitors This series offers metallized film capacitors that ha ve a x ial lead s and e x h ib it e x c e lle n t heat re s is ta n c e and m o is tu re re s is ta n c e . T h ese
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1200VDCV
2j104k
H R C M F 2J 225
2A104K
MTB-p, hitachi
300-02F
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Untitled
Abstract: No abstract text available
Text: Thyristors S i B O D “ B r e a k o v e r D e v i c e s ? S MTB J Control overpower T "Cro w B a r" Protection MECHANICAL CHARACTERISTICS To protect sensitive telecom m unications • Transfer molded, void free epoxy body circuitry, Crydom Thyristors (SiBOD "
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180mm
300mm
998-5D00
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d0245
Abstract: BCW30 BCW29 IEC134 332 z marking, sot-23
Text: •I bb53S31 DD^MSbl MTb H A P X N AUER P H I L I P S / D I S C R E T E BCW29 BCW30 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli cations in thick and thin-film circuits.
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bb53S31
DQ545bl
BCW29
BCW30
200juA
OT-23.
bbS3131
BCW30
7Z68043
d0245
BCW29
IEC134
332 z marking, sot-23
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jhdd
Abstract: No abstract text available
Text: SEM ICONDUCTOR KRC281S-KRC286S TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR SW ITC H IN G A PPLICATION. A U D IO M U TIN G A PPLICATION. FEA T U RE S L lì L DIM • High emitter-base voltage : V EBO=25V Min • High reverse hFE : reverse h FE=150(Typ.) (VCE=-2V, Ic=-4mA)
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KRC281S-KRC286S
KRC281S
KRC282S
KRC283S
KRC284S
KRC285S
KRC286S
50//A
jhdd
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