Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC L.7E D • b l l l S ^ □ □ G cm H 240 ■ MRN PRELIMINARY W IIC R D N — - MT5C256K4A1 REVOLUTIONARY PINOUT 256K x 4 SRAM SRAM 256K x 4 SRAM FEATURES • High speed: 12,15, 20 and 25ns • Multiple center power and ground pins for greater
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MT5C256K4A1
32-Pin
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A1567
Abstract: No abstract text available
Text: MT5C256K4A1 RE VO LUT ION AR Y PINOUT 256K x 4 SRAM |v iic = n o N SRAM 256K x 4 SRAM FEATURES • High speed: 1 2 ,1 5 ,2 0 and 25ns • Multiple center pow er and ground pins for greater noise immunity • Easy m emory expansion w ith CE and OE options • Autom atic CE power down
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MT5C256K4A1
32-Pin
A1567
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Untitled
Abstract: No abstract text available
Text: M IC R O N MT5C256K4A1 REVO LU TIO N ARY PINOUT 256K x 4 SR A M I SRAM 256K x 4 SRAM FEATURES • High speed: 12,15,20 and 25ns • Multiple center power and ground pins for greater _ _ noise immunity • Easy memory expansion with CE and OE options • Automatic CE power down
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MT5C256K4A1
32-Pin
D010263
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY |U llC R O N MT5C256K4A1 RE V O L U T IO N A R Y PINOUT 256K x 4 SRAM SRAM 256K x 4 SRAM FEATURES • H ig h sp eed : 1 2 ,1 5 , 20 an d 25ns • M u ltip le cen ter p o w er a n d g ro u n d p in s fo r greater n o ise im m u n ity • E asy m em o ry ex p a n sio n w ith C E an d O E op tio n s
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MT5C256K4A1
32-Pin
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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64Kx4
KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
64Kx8
256KX4
KM428C64
uPD23C4000
93c46 atmel
sony Cross Reference
atmel 93c66
HN62404P
93C46L
rom at29c010
Hitachi SRAM cross reference
x2864a
UPD23C2000
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Untitled
Abstract: No abstract text available
Text: ADVANCE 256K x 4 SRAM SRAM WITH SINGLE CHIP ENABLE, CENTER POWER AND GROUND PINS FEATURES • High speed: 12,15,20 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • Automatic CE power down
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MT5C256K4A1
32-Pin
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PDF
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TC55B4257
Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264
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KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
KM428C64
KM424C256
KM424C256A
TC524256
TC55B4257
93C46L
UPD23C4000
atmel 93c66
KM628512
Hitachi SRAM cross reference
atmel 93c57
TC55B465
upd23c8000
93c56v
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