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    Untitled

    Abstract: No abstract text available
    Text: MT4C1006J 4 MEG X 1 DRAM [MICRON DRAM 4 MEG X 1 DRAM DRAM STATI C-COLUMN FEATURES • Industry-standard x l pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply • Low power, 3mW standby; 275mW active, typical


    OCR Scan     		PDF MT4C1006J 275mW 024-cycle 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT4C1006J 4 MEG X 1 DRAM fU |IC =R O N DRAM 4 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225mW active, typical


    OCR Scan     		PDF MT4C1006J 225mW 024-cycle 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT4C1006J 4 MEG X 1 DRAM M IC R O N DRAM 4 MEG X 1 DRAM DRAM STATIC-COLUMN FEATURES • Industry-standard xl pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single+5V ±10% power supply • Low power, 3mW standby; 275mW active, typical


    OCR Scan     		PDF MT4C1006J 275mW 024-cycle 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT4C1006J 4 MEG X 1 DRAM |U |IC = R O I\ J DRAM 4 MEG X 1 DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT Top View • Industry standard x l pinout, timing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply


    OCR Scan     		PDF MT4C1006J 024-cycle 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT4C1006J 4 MEG X 1 DRAM M IC R O N DRAM 4 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT Top View • Industry-standard x l pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V +10% power supply


    OCR Scan     		PDF MT4C1006J 024-cycle 20/26-Pin 20-Pin

    Untitled

    Abstract: No abstract text available
    Text: M T4C1006J MICRON I 4M E GX1 D R A M DRAM 4 MEG x 1 DRAM • FEATURES • Industry-standard x l pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225mW active, typical


    OCR Scan     		PDF 1006J 225mW 024-cycle 20/26-Pin MT4C1006th MT4C1006J