L-11721
Abstract: L-11714 L-11716 L-11719 L-11723 L-11754 L-11748 L-11743 11750 L-11752
Text: Applications Include Small Toroid RF Chokes Miniature Two Lead Thru-hole Packages Excellent Electrical Performance - High Q Dimensions in inches mm Code L W H MT1 0.210 (5.33) 0.110 (2.79) 0.230 (5.84) L W H MT2 0.270 (6.86) 0.150 (3.81) 0.280 (7.11) MT3
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L-11714
L-11715
L-11716
L-11717
L-11718
L-11719
L-11720
L-11721
L-11722
L-11723
L-11721
L-11714
L-11716
L-11719
L-11723
L-11754
L-11748
L-11743
11750
L-11752
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T1258N
Abstract: No abstract text available
Text: Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T1258N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max enndaten
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T1258N
T1258N
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Magnetic Components
Abstract: magcat HT 1200-4 smd l1221 triac 20103 efd 12-pin smps transformers 20000 watt schematics power amp HT 1200-4 SCR TRIAC control L-14302
Text: Rhombus Industries Inc. NEW! Transformers & Magnetic Products FOR '97 MAGNETIC COMPONENTS INDUCTORS, COILS & SMPS MAGNETICS PRODUCTS INCLUDE. CURRENT SENSE POWER LINE CHOKES HASH CHOKES COMMON MODE MAG AMP TOROIDS POWER INDUCTORS SWING INDUCTORS HIGH L AIR COILS
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1435 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC • Allowing automatic insertion with radial taping 16.0±1.0
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2SB1435
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Abstract: No abstract text available
Text: Power Transistors 2SB1593 Silicon PNP epitaxial planar type Unit: mm For low-frequency amplification • Low collector to emitter saturation voltage VCE sat • Allowing automatic insertion with radial taping 16.0±1.0 • Absolute Maximum Ratings TC = 25°C
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2SB1593
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Abstract: No abstract text available
Text: Power Transistors 2SD2341 Silicon NPN triple diffusion planar type Unit: mm For power amplification • Low collector to emitter saturation voltage VCE sat • High collector to emitter voltage VCEO • Allowing automatic insertion possible with radial taping
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2SD2341
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2178 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC 16.0±1.0 • Absolute Maximum Ratings Ta = 25°C Parameter
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2SD2178
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Abstract: No abstract text available
Text: Power Transistors 2SD2133 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification driver Complementary to 2SB1413 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • Low collector to emitter saturation voltage VCE sat
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2SD2133
2SB1413
2SB1413
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory
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2SB1416
2SD2136
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2573 Silicon NPN triple diffusion planar type Unit: mm For high current amplification, power amplification 90˚ 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage
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2SD2573
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Abstract: No abstract text available
Text: Power Transistors 2SB1504 Silicon PNP epitaxial planar type darlington Unit: mm For power switching • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping 16.0±1.0 • Absolute Maximum Ratings TC = 25°C
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2SB1504
300ms
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2sb1447
Abstract: No abstract text available
Text: Power Transistors 2SB1447 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large peak collector current ICP • Allowing supply with the radial taping 16.0±1.0 • Absolute Maximum Ratings TC = 25°C
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2SB1447
100ms
2sb1447
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 • Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory
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2SD2136
2SB1416
100ms
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2SB1593
Abstract: No abstract text available
Text: Power Transistors 2SB1593 Silicon PNP epitaxial planar type Unit: mm For low-frequency amplification • Low collector to emitter saturation voltage VCE sat • Allowing automatic insertion with radial taping 16.0±1.0 • Absolute Maximum Ratings TC = 25°C
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2SB1593
2SB1593
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2SB1416
Abstract: 2SD2136
Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory
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2SB1416
2SD2136
2SB1416
2SD2136
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L-11721
Abstract: L-11714 L11767 11789 L-11738 iso 11783 L-11781 L-11715 L-11733 L-11717
Text: For Package Dimensions, sions, j See Page 38, Figure 14 B I Small Toroid RF Chokes Miniature 2 Lead Thru-hole Packages Excellent Electrical Performance - High Q Applications Include Satellite Communications lylicrowave Equipment Packaee MT2: .270" L x .150" W x .280’
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L-11714
L-11715
L-11716
L-11717
L-11718
L-11719
L-11720
L-11721
L-11722
L-11723
L11767
11789
L-11738
iso 11783
L-11781
L-11733
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Untitled
Abstract: No abstract text available
Text: B For Package Dimensions, sions, j See Page 38, Figure 14 B I Small Toroid RF Chokes Miniature 2 Lead Thru-hole Packages Excellent Electrical Performance - High Q Applications Include Satellite Communications lylicrowave Equipment Broadcast TV • Cable TV Systems
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L-11751
L-11755
L-11756
L-11757
L-11750
L-11754
L-11790
L-11746
L-11791
L-11747
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l-11766
Abstract: No abstract text available
Text: Applications Include Small Toroid RF Chokes Satellite Communications Microwave Equipment Broadcast TV Cable TV Systems Miniature Two Lead Thru-hole Packages Test Equipment Excellent Electrical Performance - High Q A M /EM Radio MT1 MT2 MT3 L W Scanners H 0.210
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L-11750
L-11751
L-11752
L-11753
L-11754
L-11755
L-11756
L-11757
L-11758
L-11759
l-11766
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2SB1424
Abstract: 2SB1426 2SB1413 2SB1414 2SB1416 2SB1417 2SB1417A 2SB1418 2SB1418A 2SB1419
Text: - 90 - 1 I W Ta=25cC, *Ep[àTc=25‘C m 2SBH13 2SB1414 2SB1415 2SB1416 2SBH17 2SB14Ì7A 2SB1418 2SB1418A 2SB1419 2SB1421 *)CD1 A 1) 1) i.'JUL'tOL 2SB1424 2SB1426 2SB1428 2SB1430 2SB1431 2SB1432 2SB1433 2SB1434 2SB1435 2SB1437 2SB1438 2SB1439 2SB1440 2SB1446
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2SB1413
2SB1414
ZSB1415
2SB1416
2SB1417
2SB1417A
2SB1418
2SD2185
SC-59
2SB1440
2SB1424
2SB1426
2SB1414
2SB1418
2SB1418A
2SB1419
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2sd2229
Abstract: 2SD2191 2SD2180 2SD2181 2SD2182 2SD2183 2SD2184 2SD2185 2SD2188 2SD2192
Text: - 284 - m *+ 1-1 /u ^ u«UbU _ V 2SD2180 2SD2181 2SD2182 2SD2183 2SD2184 2SD2185 2SD2188 2SD2191 2SD2192 2SD2193 2SD2198 2SD2199 2SD2200 2SD2201 tfiT t&T t&T tar O— A O— A □— A Bi = # Hi# =#* — 2SD2203 2SD2209 2SD2210 2SD2213 2SD22U 2SD2215 2SD2215A
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2SD2180
2SD2181
2SD2182
2SD2183
2SD2184
2SD2185
2SD2188
2SD2216
MP-45)
2SD2217
2sd2229
2SD2191
2SD2192
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2SB1496
Abstract: 2SB1466 2SB1516 2sb148 2SB1464 2SB1465 2SB1467 2SB1468 2SB1469 2SB1470
Text: - 92 - Ta=25t5. *EP(3Tc=25?C £ 2SB1464 2SBI465 2SB1466 2SB1467 2SB1468 2SB1469 2SB1470 2SB1471 2SB1472 2SB1473 ni-m ine ¿0014l 0 2SB1488 2SB1489 2SB1490 2SB1492 2SB1493 2SB1494 2SB1496 2SB1498 2SB1500 2SB1501 2SB1502 2SB1503 2SB1504 2SB1505 2SB1507 2SB1508
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2SB1464
2SB1465
-200u
2SB1466
2SB1467
2SB1468
2SB1469
2SD2275
2SB1502
2SD2276
2SB1496
2SB1516
2sb148
2SB1467
2SB1468
2SB1470
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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SDT1000
Abstract: DT6104 RCA508 1205t MJ8400 MD-21 XT2C M021 857m 25T80
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
100mT
800kSA
1561A608
1561A615
800MA
STC1094
SDT1000
DT6104
RCA508
1205t
MJ8400
MD-21
XT2C
M021
857m
25T80
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2sd 4515
Abstract: transistors 2sd 2500 2SB1619 B1582 2sd darlington 2sc 043 2SA audio POWER TRANSISTORS 2sa 3704 25C1317 2SC4714
Text: Transistors Selébtion Guide by Applications and Functions • Silicon Small Signal Transistors • G e n e ra l-u s e Low Frequency Am plifiers and Others Package (No.) Application S S Mini Functions Type (D1) i 2SB 14 62 [ 2SD2216 S Mini Type (D5) T Mini
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2SD2216
O-92NL
O-92L
2SB1218A
2SA1309A
2SD601A
2SA719
25C1317
2S8643
2SD63B
2sd 4515
transistors 2sd 2500
2SB1619
B1582
2sd darlington
2sc 043
2SA audio POWER TRANSISTORS
2sa 3704
2SC4714
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