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    MSM514102 Search Results

    MSM514102 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MSM514102-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MSM514102-10 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Type Scan PDF
    MSM514102-70 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Type Scan PDF
    MSM514102-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MSM514102-80 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Type Scan PDF
    MSM514102-8A Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MSM514102A-10 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Original PDF
    MSM514102A-10 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Scan PDF
    MSM514102A-70 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Original PDF
    MSM514102A-70 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Scan PDF
    MSM514102A-80 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Original PDF
    MSM514102A-80 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Scan PDF
    MSM514102AL-10 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Original PDF
    MSM514102AL-10 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Scan PDF
    MSM514102AL-70 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Original PDF
    MSM514102AL-70 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Scan PDF
    MSM514102AL-80 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Original PDF
    MSM514102AL-80 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Scan PDF
    MSM514102B-10 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Original PDF
    MSM514102B-60 OKI Semiconductor 4,194,304-word x 1-Bit Dynamic RAM, Static Column Mode Original PDF

    MSM514102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSM514102D

    Abstract: MSM514102DL
    Text: E2G0149-29-41 ¡ Semiconductor MSM514102D/DL ¡ Semiconductor This version: Apr. 1999 MSM514102D/DL 4,194,304-Word ¥ 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The MSM514102D/DL is a 4,194,304-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate


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    PDF E2G0149-29-41 MSM514102D/DL 304-Word MSM514102D/DL 26/20-pin 20pin MSM514102D MSM514102DL

    CA10

    Abstract: ZIP20
    Text: J2G0149-29-41 作成:1999年 4月 ¡ 電子デバイス MSM514102D/DL l MSM514102D/DL 4,194,304-Wordx1-Bit DYNAMIC RAM:スタティックカラムモード n 概要 MSM514102D/DLはCMOSプロセス技術を用いた4,194,304ワ−ド×1ビット構成のダイナミックランダ


    Original
    PDF J2G0149-29-41 MSM514102D/DL MSM514102D/DL 304-Word MSM514102D/DLCMOS4 41CMOS 26/20SOJ20ZIP26/20TSOP 02416ms1 024128msL- 26/20300milSOJ CA10 ZIP20

    CA10

    Abstract: ZIP20
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original
    PDF J2G0149-29-41 MSM514102D/DL MSM514102D/DL 304-Word MSM514102D/DLCMOS4 41CMOS 26/20SOJ20ZIP26/20TSOP 02416ms1 024128msL- 26/20300milSOJ CA10 ZIP20

    MSM514102DL

    Abstract: No abstract text available
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    PDF

    24 pin 16mbit DRAM

    Abstract: MSM5116100A MSM6688 MSM6788 MSM6791 sad a4 a5 gnd 05 we331
    Text: ¡ Semiconductor MSM6791 MSM6791 ¡ Semiconductor DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solid-state recording and playback ICs MSM6688 and MSM6788 . FEATURES • DRAM (¥ 1-bit configuration)


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    PDF MSM6791 MSM6791 MSM6688 MSM6788) MSM511000A, MSM511001A) MSM514100A, MSM514101A) 16M-bit 24 pin 16mbit DRAM MSM5116100A MSM6788 sad a4 a5 gnd 05 we331

    MSM511000

    Abstract: MSM514400 MSM548263
    Text: ––––––––––––––––––––––––––––––––––––––––––––––––––––––––– • Fast Access Operation for DRAMs ■ INTRODUCTION Increased processor speeds and high resolution graphics have placed added performance demands on the


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    PDF 130ns 1-800-OKI-6388 MSM511000 MSM514400 MSM548263

    MSM6389B

    Abstract: dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591
    Text: Discontinuation Products List P/N MD56V62160 Replacement if any Category P/N Replacement (if any) Category MD56V62160E (under DRAM develop) MSM514223B P/N Replacement (if any)Category ASM MSM51C2800 DRAM ASM MSM51C2800 DRAM ASM MSM51C4256 DRAM ML62882A MCU


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    PDF MD56V62160 MD56V62160E MSM514223B MSM51C2800 MSM51C4256 ML62882A MSM51 4223C ML62886 MSM6389B dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM514102_ 4,194,304-Word x 1-Bit DYNAM IC RAM: STATIC CO LUM N M O DE TYPE GENERAL DESCRIPTION The MSM514102 is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514102 is OKI's CMOS silicon gate process technology.


    OCR Scan
    PDF MSM514102_ 304-Word MSM514102 cycles/16 26-pin 20-pin MSM514102

    BL-70

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 14102 B/BL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUM N MODE TYPE DESCRIPTION The MSM514102B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514102B/BL is OKI's CMOS silicon gate process technology.


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    PDF 304-Word MSM514102B/BL cycles/128ms 102B/BL A0-A10 b72424Q 001604b BL-70

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM514102A/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE GENERAL DESCRIPTION The MSM514102A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fab ricate the M SM 514102A/AL is O KI's CMOS silicon gate process


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    PDF MSM514102A/AL_ 304-Word MSM514102A/AL 14102A/AL 26-pin 20pin MSM514102A/ALÂ

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514102A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE D ESCRIPTIO N The M SM 514102A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the M SM 514102A/AL is OKI's CMOS silicon gate process technology.


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    PDF MSM514102A/AL 304-Word 14102A/AL 194304-w cycles/16m cycles/128m

    CA10

    Abstract: MSM514102-10 MSM514102-70 MSM514102-80
    Text: 5ÖE D b ? S 4 2 4 D DDlETfli SSñ « O K I J O K I SEMICONDUCTOR GROUP O K I semiconductor MSM514102 T ~ 4,194,304-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TY PE G EN ER A L DESCRIPTION The MSM514102 is a new generation dynamic RAM organized as 4 ,194,304-word x 1-bit.


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    PDF S424D MSM514102_ 304-Word MSM514102 26-pin 20-pin 18-pin MSM514102- CA10 MSM514102-10 MSM514102-70 MSM514102-80

    Untitled

    Abstract: No abstract text available
    Text: 5ÛE D Hi t i T E HS MQ O K I O K I OOlBOSb 40b B O K IJ SE MI CONDUCTOR s e m i c o n d u c t o r G R OU P - r - H ê - z s - is- MSM514102A/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE G EN ER A L DESCRIPTION The MSM514102A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit.


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    PDF 2424D MSM514102A/AL_ 304-Word MSM514102A/AL 26-pin 20-pin

    MSM514102-10

    Abstract: MSM514102-8A
    Text: Mb E D • 3724240 G G O W l bbO H O K I J O K I sem iconductor_ T - v <-23 - J * M SM 514102 K 1 SEMICONDUCTOR g r o u p 4,194,304-WORDx 1-BIT DYNAMIC RAM: STATIC COLUMN MODE TYPE GENERAL DESCRIPTION The MSM514102 is a new generation dynamic RAM organized as 4,194,304 words by 1 bit.


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    PDF MSM514102 304-WORD 26-pin 20-pin 18-pin msm514102â T-46-23-15 A0-A10 MSM514102-10 MSM514102-8A

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM514102 A/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MOPE TYPE GENERAL DESCRIPTION The M SM 514102A /A L is a n e w g e n e ratio n d ynam ic RAM o rg an ized as 4,19 4,30 4-w o rd x 1-bit. T h e te c h n o lo g y used to fa b ric a te th e M S M 5 1 4 1 0 2 A /A L is O K I's CM O S silic o n g a te p ro cess


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    PDF MSM514102 304-Word 14102A 26-pin 20pin MSM514102A/AL MSM514102A/ALI ----------------------------MSM514102A/AL

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


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    PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    ci 555

    Abstract: MN414100ASJ MT4C1004-7 20PIN MCM54100A-C70 MCM54100A-C80 MCM54101A-70 MCM54101A-80 MCM54102A-60 MCM54102A-70
    Text: - fe ít £ PC TRAC ns) TRCY min (ns) max TCAD min (ns) TAH ein (ns) TP Y n am C R A M (4 19 4 3 0 4 X 1 ) m n tt min WCY rain •in TDH (ns) (ns) (ns) TRWC V D D or V C C I DD max (ns) (V) A M (ibA) I DD STANDBY ( I SB/ I SB2) OnA) VIL nax (V) 1N ta [*typ]


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    PDF 20PIN MCM54100A-C70 MCM54100A-C80 MCM541D1A-60 MCM54101A-70 MT4C4005-8 MT4C4006-10 MT4C4006-12 MT4C4006-8 TC514100AP/AJ/ASJ-10 ci 555 MN414100ASJ MT4C1004-7 MCM54101A-80 MCM54102A-60 MCM54102A-70

    2M540

    Abstract: 20-PIN 26-PIN ZIP20-P-400-W1
    Text: O K I Semiconductor MSM5 1 4 1 02 A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The M S M 514102A /A L is a new generation dynam ic RAM organized as 4,194,304-w ord x 1-bit. The technology used to fabricate the M S M 514102A /A L is OKI's CMOS silicon gate process technology.


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    PDF MSM514102A/AL 304-Word MSM514102A/AL 4494304-word cycles/16ms, cycles/128ms MSM514102A/A b724240 2M540 20-PIN 26-PIN ZIP20-P-400-W1

    b751 transistor

    Abstract: 26-PIN ZIP20-P-400 b751
    Text: O K I Semiconductor MSM5 14102B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION T he M SM 51 41 02 B/BL is a n e w generation d yn am ic R A M organized as 4,194,304-word x 1-bit. T he technology used to fabricate the M SM 5 1 4 1 0 2 B/BL is O K I's C M O S silico n gate process technology.


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    PDF MSM514102B/BL 304-Word MSM514102B/BL 128ms L724240 QD1604b b751 transistor 26-PIN ZIP20-P-400 b751

    DYNAMIC RAM CROSS REFERENCE

    Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
    Text: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102


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    PDF KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 TC514100 TC514101 TC514102 TC514400 TC514402 DYNAMIC RAM CROSS REFERENCE KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 KMM591000 MC-422000A36

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM6791 DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solidstate recording and playback ICs MSM6688 and MSM6789A . FEATURES • DRAM (x 1-bit configuration) lM-bit DRAM (MSM511000A, MSM511001A): 8 pcs. can be connected.


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    PDF MSM6791 MSM6791 MSM6688 MSM6789A) MSM511000A, MSM511001A) MSM514100A, MSM514101 16M-bit MSM5116100A)

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 MB81257 — S. Column KM41C258 TC51258


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    PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference