BC817
Abstract: PBSS4140T PBSS4240V PBSS5240V SC-101 SC-89 pbss3515vs MSD970 pbss2540F PBSS5540Z
Text: Low VCEsat BISS transistors Breakthrough in Small-Signal Continuing Philips innovation in small-signal discretes our latest BISS transistors deliver performance levels normally associated with medium-power applications. By providing power sensitive applications in consumer and professional applications with
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PBSS4140
Abstract: PBSS4350Z, PBSS4350X, PBSS4350T pbss5140t PBSS5140T, PBSS5140U BC817 PBSS4140T PBSS4240V PBSS5240V SC-101 SC-89
Text: Low VCEsat BISS transistors Breakthrough in Small-Signal Continuing Philips innovation in small-signal discretes our latest BISS transistors deliver performance levels normally associated with medium-power applications. By providing power sensitive applications in consumer and professional applications with
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npn transistor footprint
Abstract: PBLS2002D PBLS4003V PBLS2003D S 170 MOSFET TRANSISTOR PBLS4003D PBLS1503V PBSS2515YPN PBSS3515VS PBLS2003S
Text: Double low VCEsat BISS transistors in SO8 2.7 A double low VCEsat (BISS) transistors to reduce board space NXP Semiconductors‘ latest double Breakthrough In Small-Signal (BISS) transistors, housed in the industry standard package SO8, deliver performance and board space benefits to a variety of
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ultra low drop, high current diode
Abstract: sot23 a60 SOD123 footprint sot23 footprint PBSS4160T PBSS4350X PBSS5240V PMEG1020EV PMEG3005AEA PMEM4010PD
Text: Semiconductors Taking the heat out of transistors and rectifiers Philips’ highly efficient low VCEsat BISS transistors and ultra low VF (MEGA) Schottky barrier rectifiers All electronic switches drain power and generate heat. But what could you do with transistors and rectifiers that are significantly more
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OT666
PBSS5240V
ultra low drop, high current diode
sot23 a60
SOD123 footprint
sot23 footprint
PBSS4160T
PBSS4350X
PMEG1020EV
PMEG3005AEA
PMEM4010PD
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PBSS4350Z, PBSS4350X, PBSS4350T
Abstract: BC817 BDP31 PBSS4140T PBSS4240V PBSS4320T PBSS4350T PBSS4350Z PBSS5240V PBSS5320T
Text: Breakthrough in Small-Signal Low VCEsat BISS transistors Breakthrough in Small-Signal Low VCEsat (BISS) transistors Continuing Philips innovation in small-signal discretes our latest BISS transistors deliver performance levels normally associated with medium-power applications. By providing power sensitive
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PBSS4350T
PBSS5350T
PBSS4320T
PBSS5320T.
PBSS2515VPN
PBSS2515YPN
PBSS4140DPN
PBSS4240DPN
MSD971
OT223
PBSS4350Z, PBSS4350X, PBSS4350T
BC817
BDP31
PBSS4140T
PBSS4240V
PBSS4350Z
PBSS5240V
PBSS5320T
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sc74750
Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes
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OT346
SC-59)
sc74750
MSE-200
PESD5VOL4UW
KMZ52
kmz51
smd transistor BC557
PBLS1504V
2n5551 smd
PMBS3904, PMSS3904
sc7921
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