Untitled
Abstract: No abstract text available
Text: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features Low-Noise Performance High Cut-off Frequency Passivated to Enhance Reliability Packaged Diodes and Bondable Chips Applications Single and Balanced Mixers and Detectors Transceivers X, K and Ka Bands
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MS8001
MS8004
MS8000
Maximum015
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Untitled
Abstract: No abstract text available
Text: 6030 POWER INDUCTORS High Reliability Power Inductors MS512PYA • High temperature materials allow operation in ambient temperatures up to 155°C ■ Tin-lead Sn-Pb termination for the best possible board adhesion ■ Passes vibration testing to 80 G and shock testing to 1000 G
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MS512PYA
MS800-2
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MS8002
Abstract: Colibrys
Text: MS8000.D / Single axis analog accelerometer 30S.MS8XXX.N.03.12 Energy Mil/Aerospace Industrial Features Inertial Tilt − − − − − − − − Vibration Seismic ±2g to ±100g range Excellent bias stability less than 0.05% of full scale Single power supply (+2.5V to +5.5V, ratiometric voltage output)
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MS8000
MS8002
Colibrys
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Untitled
Abstract: No abstract text available
Text: 6030 POWER INDUCTORS High Reliability Power Inductors MS512PYA • High temperature materials allow operation in ambient temperatures up to 155°C ■ Tin-lead Sn-Pb termination for the best possible board adhesion ■ Passes vibration testing to 80 G and shock testing to 1000 G
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MS512PYA
MS800-3â
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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Untitled
Abstract: No abstract text available
Text: 6030 POWER INDUCTORS High Reliability Power Inductors MS512PYA • High temperature materials allow operation in ambient temperatures up to 155°C ■ Tin-lead Sn-Pb termination for the best possible board adhesion ■ Passes vibration testing to 80 G and shock testing to 1000 G
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MS512PYA
MS800-3â
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k and ka band radar detector
Abstract: MS8000 MS8004 MS8001-P10 noise diode Microwave schottky Diode mixer RF Microwave schottky Diode mixer MS8001 m38 schottky MS8002
Text: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors
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MS8001
MS8004
MS8000
k and ka band radar detector
MS8004
MS8001-P10
noise diode
Microwave schottky Diode mixer
RF Microwave schottky Diode mixer
MS8001
m38 schottky
MS8002
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MS8001
Abstract: m38 schottky
Text: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors
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MS8001
MS8004
MS8000
In015
MS8001
m38 schottky
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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MEMS ACCELEROMETER 3 axis analog output 10 Khz
Abstract: MS8002
Text: MS8000.D / Single axis analog accelerometer 30S.MS8XXX.N.03.12 Energy Mil/Aerospace Industrial Features Inertial Tilt Vibration Seismic ±2g to ±100g range Excellent bias stability less than 0.05% of full scale Single power supply (+2.5V to +5.5V, ratiometric voltage output)
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MS8000
MEMS ACCELEROMETER 3 axis analog output 10 Khz
MS8002
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S95 SMD
Abstract: s954 s95A BDS950 BDS952 BDS954 BDS956 BDS95S 1S91
Text: Philips Components Datasheet status Product specification date of Issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector em itter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors
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BDS950/952/954/956
OT223)
BDS949/951/953/955.
OT223
BDS950
BDS952
BDS954
BDS956
S95 SMD
s954
s95A
BDS95S
1S91
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