MS-012AA
Abstract: No abstract text available
Text: Power Packages MS-012AA 8 LEAD JEDEC MS-012AA SMALL OUTLINE PLASTIC PACKAGE E INCHES A E1 A1 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES 0.0532 0.0688 1.35 1.75 - 0.004 0.0098 0.10 0.25 - b 0.013 0.020 0.33 0.51 - c 0.0075 0.0098 0.19 0.25 - D 0.189 0.1968 4.80
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MS-012AA
MS-012AA
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MS-012AA
Abstract: MS-012-AA MS-012AA Package
Text: Power Packages MS-012AA 8 LEAD JEDEC MS-012AA SMALL OUTLINE PLASTIC PACKAGE E INCHES A E1 A1 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES 0.0532 0.0688 1.35 1.75 - 0.004 0.0098 0.10 0.25 - b 0.013 0.020 0.33 0.51 - c 0.0075 0.0098 0.19 0.25 - D 0.189 0.1968 4.80
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MS-012AA
MS-012AA
MS-012-AA
MS-012AA Package
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MS-012-AA
Abstract: MS-012AA MS-012AA Package
Text: Power Packages MS-012AA 8 LEAD JEDEC MS-012AA SMALL OUTLINE PLASTIC PACKAGE E E1 INCHES A A1 1 e 2 6 D 5 b SYMBOL h x 45 c 0.004 IN 0.10 mm L 0o-8o 0.060 1.52 0.050 1.27 0.024 0.6 0.155 4.0 0.275 7.0 MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE-MOUNTED APPLICATIONS
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MS-012AA
MS-012AA
330mm
EIA-481
MS-012-AA
MS-012AA Package
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PDF
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d 331 transistor 1080
Abstract: MO-193AA MS-012AA to-252 751 on MO-193 footprint
Text: Power Packages MS-012AA 8 LEAD JEDEC MS-012AA SMALL OUTLINE PLASTIC PACKAGE E E1 INCHES A A1 1 e 2 6 D 5 b SYMBOL h x 45 c 0.004 IN 0.10 mm L 0o-8o 0.060 1.52 0.050 1.27 0.024 0.6 0.155 4.0 0.275 7.0 MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE-MOUNTED APPLICATIONS
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MS-012AA
MS-012AA
d 331 transistor 1080
MO-193AA
to-252 751 on
MO-193 footprint
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PDF
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MS-012-AB
Abstract: MS-012AB MS-012AB Package MS-012AA MS-012AC
Text: Q QUALITY SEMICONDUCTOR, INC. Selection Guide and Packaging Information 150-MIL SOIC - Package Code S1 Plastic Small Outline Gull-Wing 1 E H N D SEATING PLANE A B e JEDEC# h x 45° L α A1 MS-012AA MS-012AB C MS-012AC Symbol Min Nom Max Min Nom Max Min Nom
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150-MIL
MS-012AA
MS-012AB
MS-012AC
MS-012-AB
MS-012AB
MS-012AB Package
MS-012AA
MS-012AC
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PDF
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MS-012AA
Abstract: 0201 land pattern
Text: PACKAGE MECHANICAL INFORMATION 8-SOIC Package Outline Dimensions 8-Pin Plastic Small Outline Surface Mount MS-012AA, JEDEC Publication 95 4.80 - 5.00 0.189 - 0.197 5.80 - 6.20 (0.228 - 0.244) 8 7 6 5 1 2 3 4 INDEX 3.81 - 4.00 (0.150 - 0.157) 1.35 - 1.75
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MS-012AA,
MD-8SOIC-003-a
MD-8SOIC-004-a
MS-012AA
0201 land pattern
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AN9321
Abstract: HUFA75631SK8 HUFA75631SK8T MS-012AA TB334 109E diode
Text: HUFA75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models
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HUFA75631SK8
MS-012AA
75631SK8
AN9321
HUFA75631SK8
HUFA75631SK8T
MS-012AA
TB334
109E diode
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PDF
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AN9321
Abstract: AN9322 HUF75631SK8 HUF75631SK8T MS-012AA TB334 238e 109E diode
Text: HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models
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HUF75631SK8
MS-012AA
75631SK8
AN9321
AN9322
HUF75631SK8
HUF75631SK8T
MS-012AA
TB334
238e
109E diode
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PDF
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MS-012AA
Abstract: No abstract text available
Text: Package Outline 0.188 – 0.197 4.775 – 5.004 0.244 0.228 0.205 0.181 0.158 0.150 0.029 0.011 7° (4 PLCS) 0.010 0.004 45° 0.012 0.008 0.069 0.053 0.018 0.014 0.050 Typ. 8-Lead Small Outline Package (LG, TG) (MS-012AA) Note: Circle (e.g. B ) indicates JEDEC Reference.
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MS-012AA)
MS-012AA
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AN7254
Abstract: AN7260 ITF86110DK8T MS-012AA TB370
Text: ITF86110DK8T Data Sheet 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2000 Features • Ultra Low On-Resistance - rDS(ON) = 0.025Ω, VGS = 10V - rDS(ON) = 0.034Ω, VGS = 4.5V
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ITF86110DK8T
MS-012AA)
AN7254
AN7260
ITF86110DK8T
MS-012AA
TB370
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PDF
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ITF86182SK8T
Abstract: MS-012AA TB370
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
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ITF86182SK8T
MS-012AA)
ITF86182SK8T
MS-012AA
TB370
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Untitled
Abstract: No abstract text available
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
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ITF86182SK8T
MS-012AA)
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AN9321
Abstract: HUFA75531SK8 HUFA75531SK8T MS-012AA TB370
Text: HUFA75531SK8 Data Sheet December 2001 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER
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HUFA75531SK8
MS-012AA
75531SK8
AN9321
HUFA75531SK8
HUFA75531SK8T
MS-012AA
TB370
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PDF
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CR Bourns
Abstract: EN1122 3050B MS-012AA TISP61089DR-S bourns tisp copper bond wire SIO21 3808-2
Text: MATERIAL DECLARATION SHEET 8-SOIC Package Type MS-012AA Product Line Compliance Date November 31, 2004 RoHS Compliant Yes (-S suffix) MSL 1 Bourns TISP products complying with RoHS legislation are identified with a “-S ” suffix in the component part number e.g. TISP61089DR-S
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MS-012AA)
TISP61089DR-S
CR Bourns
EN1122
3050B
MS-012AA
TISP61089DR-S
bourns tisp
copper bond wire
SIO21
3808-2
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ITF86172SK8T
Abstract: MS-012AA TB370
Text: ITF86172SK8T Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET January 2000 File Number 4809.1 Features • Ultra Low On-Resistance [ /Title - rDS ON = 0.016Ω, VGS = −10V Packaging (HUF7 - rDS(ON) = 0.023Ω, VGS = −4.5V SO8 (JEDEC MS-012AA)
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ITF86172SK8T
MS-012AA)
6400S
ITF86172SK8T
MS-012AA
TB370
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Untitled
Abstract: No abstract text available
Text: HUFA76407DK8T_F085 Data Sheet October 2010 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V JEDEC MS-012AA BRANDING DASH
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HUFA76407DK8T
MS-012AA
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simulation models
Abstract: ITF86182SK8T MS-012AA TB370
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET January 2000 File Number 4797.2 Features • Ultra Low On-Resistance [ /Title - rDS ON = 0.0115Ω, VGS = −10V Packaging (ITF86 - rDS(ON) = 0.016Ω, VGS = −4.5V SO8 (JEDEC MS-012AA)
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ITF86182SK8T
ITF86
MS-012AA)
182SK
simulation models
ITF86182SK8T
MS-012AA
TB370
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kp 1006
Abstract: HUFA76504DK8 HUFA76504DK8T MS-012AA TB334 HARRIS SOP8
Text: HUFA76504DK8 Data Sheet 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 Packaging JEDEC MS-012AA 6400S BRANDING DASH K8 /Subject (60V, 0.072 1 2 Ohm, 3 4 4A, NChannel, Symbol Logic Level SOURCE1 (1) UltraFE GATE1 (2)
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HUFA76504DK8
MS-012AA
6400S
kp 1006
HUFA76504DK8
HUFA76504DK8T
MS-012AA
TB334
HARRIS SOP8
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PDF
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8895
Abstract: 9116 H C 4064 MS-012AA
Text: Package Outlines 8-LEAD SMALL OUTLINE PACKAGE LG, TG (MS-012AA) 0.192 ± 0.005 (4.8895 ± 0.1143) D H 0.236 ± 0.008 (5.9944 ± 0.2032) H1 E 0.154 ± 0.004 (3.9116 ± 0.1016) 0.193 ± 0.012 (4.9022 ± 0.3048) h 7° (4 P LC S ) 0.010 ± 0.002 C (0.254 ± 0.0508)
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MS-012AA)
A051004
8895
9116 H
C 4064
MS-012AA
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Untitled
Abstract: No abstract text available
Text: HUFA76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V BRANDING DASH 5 1 2
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HUFA76407DK8
MS-012AA
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AN9321
Abstract: AN9322 HUF76407DK8 HUF76407DK8T MS-012AA TB334 76407dk8
Text: HUF76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V BRANDING DASH 5 1 2
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HUF76407DK8
MS-012AA
AN9321
AN9322
HUF76407DK8
HUF76407DK8T
MS-012AA
TB334
76407dk8
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PDF
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76113dk8
Abstract: ta76113
Text: inteikil HUF76113DK8 Data S heet O c to b e r 1999 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Ultra/0' Formerly developmental type TA76113. Ordering Information HUF76113DK8 PACKAGE MS-012AA 4387.4 • Logic Level Gate Drive
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HUF76113DK8
76113dk8
ta76113
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PDF
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SMD05C
Abstract: A242C DA05
Text: SMDA05 THRU SMDA24 SERIES SURFACE MOUNT DIODE ARRAY TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5.0 to 24.0 Volts 300 Watt Peak Pulse Power FEATURES ♦ Plastic package has U nderw riters Laboratory MS-012AA Flam m ability C lassification 9 4 V -0 ♦ G lass passivated ju nctions in
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OCR Scan
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SMDA05
SMDA24
MS-012AA
SMD05C
A242C
DA05
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PDF
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Untitled
Abstract: No abstract text available
Text: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER
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OCR Scan
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HUF76121SK8
100ms.
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PDF
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