RE1139-02
Abstract: cmos line scan sensor photodiode for fiber-optic sensor FJ-15-D-x RE1139-01 sensor x-ray RE1002-01 dalsa cmos light sensor 3 bin line scan sensor
Text: Rad-icon Imaging Corp A Division of DALSA Corporation Tel: 408-486-0886 Fax: 408-486-0882 www.rad-icon.com RadEye 1 Large Area Image Sensor Key Features: • • • • 25 by 50 mm active area 524,288 pixels 10 lp/mm resolution Three-side buttable • •
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FC1-15-02-T-WT
15-conductor
FJ-15-D-x
RE1002-01
RE1002-02
RE1139-01
RE1139-02
RE1139-02
cmos line scan sensor
photodiode for fiber-optic sensor
RE1139-01
sensor x-ray
RE1002-01
dalsa cmos
light sensor 3 bin
line scan sensor
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cables KSP 9360
Abstract: health data sheet egypt
Text: Enclosures and cable glands Catalogue 2013/2014 Let’s connect. Klippon – enclosure system The World of Industrial Connectivity As experienced experts we support our customers and partners around the world with products, solutions and services in the industrial environment of power, signal
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dist00
1420920000/03/2013/SMDM
cables KSP 9360
health data sheet egypt
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MC68HC05
Abstract: M6805 705J2 AN477 MC68HC705J2 08c1
Text: Order this document as AN477/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN477 Simple A/D for MCUs without built-in A/D converters By Åke Webjörn, Motorola AB, Sweden 1.0 Introduction Non-critical measurement of resistance is needed in many applications. Examples are temperature, light,
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AN477/D
AN477
MC68HC05
M6805
705J2
AN477
MC68HC705J2
08c1
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SUN HOLD MD-5
Abstract: MC68HC05 M6805 AN477 MC68HC705J2
Text: Order this document as AN477/D Freescale Semiconductor AN477 Simple A/D for MCUs without built-in A/D converters By Åke Webjörn, Freescale AB, Sweden Freescale Semiconductor, Inc. 1.0 Introduction Non-critical measurement of resistance is needed in many applications. Examples are temperature, light,
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AN477/D
AN477
MC68HC05
SUN HOLD MD-5
M6805
AN477
MC68HC705J2
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M6805
Abstract: MC68HC705J2 A-0702 ads 00190 IC pc 0839 AN477 MC68HC05 PASM05 07c8 SHR-16
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document as AN477/D SEMICONDUCTOR APPLICATION NOTE AN477 Simple A/D for MCUs without built-in A/D converters By Åke Webjörn, Motorola AB, Sweden Freescale Semiconductor, Inc. 1.0 Introduction Non-critical measurement of resistance is needed in many applications. Examples are temperature, light,
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AN477/D
AN477
MC68HC05
M6805
MC68HC705J2
A-0702
ads 00190
IC pc 0839
AN477
PASM05
07c8
SHR-16
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BYD17
Abstract: BYD17J BYD17M BYD17D BYD17G BYD17K M3D121 BYD17 Series
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD17 series General purpose controlled avalanche rectifiers Product specification Supersedes data of 1999 Nov 11 2001 Oct 26 Philips Semiconductors Product specification General purpose controlled avalanche rectifiers
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M3D121
BYD17
MAM061
SCA73
613510/04/pp12
BYD17J
BYD17M
BYD17D
BYD17G
BYD17K
M3D121
BYD17 Series
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4X4 HEX KEY PAD
Abstract: 4x4 hex keypad hex keypad keypad 4x4 7 segment display led display alarm clock ma 1042 4x4 matrix keypad and diagram simple 4x4 keypad 4x4 hex keypad with microcontroller 4X4 HEX KEY PAD with microcontroller 7 segment display 4x4 keyboard
Text: Multiplexing LED Drive and a 4x4 Keypad Sampling AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Typically applications having LEDs and keypads also keep track of real time, in order to synchronize certain key events. An Industrial Clock/Timer example has
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AN529
4X4 HEX KEY PAD
4x4 hex keypad
hex keypad
keypad 4x4 7 segment display
led display alarm clock ma 1042
4x4 matrix keypad and diagram simple
4x4 keypad
4x4 hex keypad with microcontroller
4X4 HEX KEY PAD with microcontroller
7 segment display 4x4 keyboard
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dell 9400
Abstract: 10GBASE-T cable pairs pinout dell motherboard schematic nec 2501 schematic diagram offline UPS Dell 40 pin I/0 pinout honeywell TS2 water filling station circuit diagram pentium 4 honeywell pcm45
Text: Intel 82598 10 GbE Ethernet Controller Open Source Datasheet PRODUCT FEATURES General Serial Flash Interface 4-wire SPI EEPROM Interface Configurable LED operation for software or OEM customization of LED displays Protected EEPROM space for private configuration
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Ethernet/802
1000BASE-BX
dell 9400
10GBASE-T cable pairs pinout
dell motherboard schematic
nec 2501
schematic diagram offline UPS
Dell 40 pin I/0 pinout
honeywell TS2
water filling station circuit diagram
pentium 4
honeywell pcm45
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Untitled
Abstract: No abstract text available
Text: TTT MS, MM MS Series JIL .200 X In d . m H y m a DC DCRO 0 DC M ax. M ax. T y p e N o. M IL P a rt N o. M S-1 M 2 7/1 46-01 1 60 1 .4 M S -5 M 2 7/1 46-02 5 28 7 M S -1 0 M 2 7/1 46-03 10 20 11 M S -2 5 M 2 7/1 46-04 25 13 38 M S -5 0 M 2 7/1 46-05 50 9
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TF5RX20ZZ;
MIL-T-27
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2SK149
Abstract: No abstract text available
Text: SEC k m=*=f/\rx A b = 7 > v * x 9 J u n c tio n Field E ffe c t T ra n s is to r 2SK149 N lJ 3 + h =7 m f t i i f f l Silicon N-channel Ju nctio n FET High Frequency A m p lifie r and M ixer Industrial Use O | y fs|=30 mS T Y P . m m / PACKAGE DIM ENSIONS
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2SK149
T0-206MD
COC\jr-COCDC001COC\JCOC\J
2SK149
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transistor DK RN
Abstract: 7 HL 05 PA33
Text: *PWS10 ms , , Du t y C y c l e ^50 % OJ t\3 A 1 U V H /// Vr V? si >j c_ m O O CD CO o m 5 o m o cn o xi > H O c/ o J> End ji co CD CO ¡2 T > C-. « > J3 o o AR1A3M •X tì« I H I w SO >1 m 4 ani* ctcr o 3 Fc. M . a - 3 3 pì+ jì Pi £+ a- Í r\
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SC--43B
PWS10
CycleS50
\JC\J040JC\
transistor DK RN
7 HL 05
PA33
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PH 17G
Abstract: No abstract text available
Text: IN D U C T O R R E S O U R C E H A N D B O O K OPT INDUSTRIES INC. 300 RED SCHOOL LANE PHILLIPSBURG, N.J. 08865 908 454-2600 FAX (908) 454-3742 Figure 1 RELATIVE M ER IT OF CORE M ATERIAL TYPES Relative Core Cost Relative 1/2(LI)Z Relative Core Loss at 50 kHz
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R96FAX
Abstract: No abstract text available
Text: MODEM PRODUCTS DATA BOOK <1 Rockwell International Semiconductor Products Division Rockwell International Corporation 1987 All Rights Reserved Printed in U.S.A. Order No. 1 February, 1987 Rockwell Sem iconductor Products Division is headquartered in Newport Beach, California with Field
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HHB8
Abstract: No abstract text available
Text: 7— / v fc S * S ' — h* m Com pound Transistor i? T / \ f 7 4# BAI F4N ! mm ★ » o s<4 r x t s t / t £ i*ui l x ^ £ i"c Ri = 22 kfì, R2= 47 k£2) o BN1F4N t ^ > "7° ij / > 9 'J T'féffl T"^ £ i " t Ì 6 Ì Ì * * S # ( T a = 25 °C) il -?- aE #
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PWiS10
HHB8
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ail4m
Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
Text: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±
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Ta-25Â
ail4m
FIM1L4M
1h0565
M31 marking transistor
TRANSISTOR IFW
la 5531
FN1L4M
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2SK426
Abstract: marking x26 2SK42 9012 transistor
Text: NEC j m^Tivrx A J u n c tio n Field E ffe c t T ra n s is to r 2SK426 N ^ - t * u =i h - ? > i > x ? N-Channel Silicon Junction Field Effect Transistor Audio Frequency Amplifier 4 $ * / FEATURES ftW M /P A C K A G E DIMENSIONS Unit : mm o i& s t ^ - e t o
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2SK426
2SK426
marking x26
2SK42
9012 transistor
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BA1A4P
Abstract: T108 02-WM RSL AH transistorBA1A4P
Text: r NEC i? f/ \ T A 5 ? — 57 • 5 /— b Compound Transistor BA1A4P ¡g N P N j : t ? ? * '> T JU S fe t # l 3 V V=7> i> X ? it '• mm) ★ Ri = 10 kQ, R2= 47 kQ) o BN1A4P T è t ~t0 lfe;ki*^#(Ta = 25 °C) II n u s ? 9 ?T 3 W ± . v i ; 7 y 3 u 3 ^ ^ ^
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CycleS50
BA1A4P
T108
02-WM
RSL AH
transistorBA1A4P
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2SK163
Abstract: 2sk163 transistor Free 9014 transistor 2sk163 PA33 SS 9014 TC-5466
Text: NEC j m = t= r iv r x J u n c t io n Field E ffe c t T r a n s is to r A 2SJ44 V 3 h = 7 > i> * 9 P-Channel Silicon Jun ction Field Effect Transistor Audio Frequercy Low Noise Amplifier ^ • » 0 / P A C K A G E D IM EN SIO N S ^/FEATU RES Unit : mm O ¡15I f EE, H i g h
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02SK163
SC-43B
545tS4i8
2SK163
2sk163 transistor
Free 9014
transistor 2sk163
PA33
SS 9014
TC-5466
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2SK314
Abstract: 4511 gm JE 33 5551a tt 22
Text: NEC j m*Ti\rx A J u n c tio n Field E ffe c t T ra n s is to r 2SK314 m Silicon N-Channel Junction FET Audio Frequency Low Noise Amplifier Industrial Use Ü - E 1 /P A C K A G E DIM ENSIO NS ^ « /F E A T U R E S Unit : mm o ® iß « T " to NF = 1.0 dB TYP. (VDs = 10 V,Id = 5 mA,RG= 1.0 kQ,f=100 Hz)
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2SK314
2SK314
4511 gm
JE 33
5551a
tt 22
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2SD1164
Abstract: 0l96
Text: NEC j Silicon P o w e r T ra n sisto r 2 { * u > h > h? > ? - ^ ì É 1Ì * i ì i | 2S D 1164ü fÊ Ü jtX ^ 9 — D ' h > 1 6 > fë $ Ê ) , ’g . X ' i y ? - > 7 R } fl-^IIl/PACKAGE DIMENSIONS t L x 9 T", ' < ; u x ^ — 9 , 'J V — , y i / 7 ^ K,
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2SD1164
2SD1164
0l96
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ic 7500B
Abstract: d7554 D4560 jb 5531 PD7554 7554A uPD7507 EVAKIT-7500B hi pot 7700 PDA-800
Text: MEC M O SIÊïglIISS MOS In te g ra te d C ircuit lÏ T /\f Z #PD7554 1 4 t 'y h • v - f i n /uPD7554il, /¿PD7500 y ' J - a i t i - ? T-\ tK— h& £ tâ h L T 'W f2 ' < ’y £ î* Ji ] L T J i 1 £ - f a f, x 'i T / i. • 4 > f 7 i “ X ^ r t i s L t Ì 3 f) , ^PD7500x U — X v l . & m m È tzl± uC 0M -% 777 ì 'J <7)zu— 7 'C P U
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uPD7554
uPD7500
PD7554
PD7500x
PD7554Ì
PD7500H
P01/SCK
ic 7500B
d7554
D4560
jb 5531
PD7554
7554A
uPD7507
EVAKIT-7500B
hi pot 7700
PDA-800
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Untitled
Abstract: No abstract text available
Text: NEC ? t Compound Transistor / \ T 7 *$ BN1F4N it o ^ M T x f f iiÆ è ^ I/ lL T v ^ l'o Ri = 22 k£2, R2= 47 kQ ¥ o BA1F4N t 3 > 7° U / > 9 >J T 'ë É ( T a = 25 °C ) II H& s 3 1/^^- • < - x F IIE n i/ 9 9 X $ '7 9 -60 V V CEO -50 V V ebo -10 V IC(DC)
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PWsS10
CycleS50
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b0958
Abstract: JE 33 PA33 R054-2 je 340 sis 5511 jl06 A0246
Text: v—S •S' î a - ê - h ^ Com pound Transistor A N I L4M # ftfó m i t o 7 / M x i £ i / i £ R i = 47 f t j t kQ , L T v ^ R 2= 4 7 ( T O î : mm t o kû) c O A A 1 L 4 M ¿1 =1 > 7 ° U / > ? U - C fë ffl X " £ £ t e ( T a = 25 ° C ) g II a u 9 9
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SC-43B
b0958
JE 33
PA33
R054-2
je 340
sis 5511
jl06
A0246
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2SA1396
Abstract: 2SC3568 T108 TS33
Text: NEC j m = f T / x r x Silicon Power Transistor A 2SA1396 P N P i t: ^ * '> 7 7Vl'7ï2'> V □ > h =7 > i> 7* 9 x if f l PNP Silicon Epitaxial Transistor High Speed, High Voltage Switching Industrial Use 2 S A 1 3 9 6 i* iâ ^ * It Œ X ^ t L X W W fê H / P A C K A G E DIMENSIONS
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2SA1396
2SA1396
2SC3568
fifO988
2SC3568
T108
TS33
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