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NXP Semiconductors MRFG35010R1 RF MOSFET PHEMT FET 12V NI360
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MRFG35010R1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MRFG35010R1		Freescale Semiconductor	3.5GHZ 10W GAAS NI360HF		Original	PDF

MRFG35010R1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRL 724 N Abstract: MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or	Original	PDF	MRFG35010 MRFG35010R1 IRL 724 N MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103
INF 740 Abstract: Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010R1 MRFG35010 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 replaced by MRFG35010AR1. MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,	Original	PDF	MRFG35010 MRFG35010R1 MRFG35010AR1. MRFG35010R1 360HF INF 740 Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010
POT 5K Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 7, 5/2006 Gallium Arsenide PHEMT MRFG35010R1 MRFG35010R5 RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or	Original	PDF	MRFG35010 MRFG35010R1 MRFG35010R5 MRFG35010 POT 5K
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 replaced by MRFG35010AR1. MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,	Original	PDF	MRFG35010 MRFG35010R1 MRFG35010AR1. MRFG35010R1
DIODE 709 1334 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 8, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010R1 Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or	Original	PDF	MRFG35010 MRFG35010R1 MRFG35010 DIODE 709 1334
power transistors table Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,	Original	PDF