MRFE6S9200H
Abstract: 465B A114 A115 AN1955 JESD22 MRFE6S9200HR3 MRFE6S9200HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9200H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRFE6S9200H
MRFE6S9200HR3
MRFE6S9200HSR3
MRFE6S9200H
465B
A114
A115
AN1955
JESD22
MRFE6S9200HSR3
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power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9200H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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Original
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PDF
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MRFE6S9200H
MRFE6S9200HR3
MRFE6S9200HSR3
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MRFE6S9200H
Abstract: ATC100B3R3 465B A114 A115 AN1955 JESD22 MRFE6S9200HR3 MRFE6S9200HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9200H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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Original
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PDF
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MRFE6S9200H
MRFE6S9200HR3
MRFE6S9200HSR3
MRFE6S9200H
ATC100B3R3
465B
A114
A115
AN1955
JESD22
MRFE6S9200HSR3
|
