A114
Abstract: AN1955 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
Text: Freescale Semiconductor Technical Data MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9130HR3 MRF6S9130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9130HR3/HSR3
MRFE6S9130HR3/HSR3.
PCN12895
MRF6S9130HR3
MRF6S9130HSR3
MRF6S9130HR3
MRF6S9130H
A114
AN1955
JESD22
MRF6S9130H
MRF6S9130HSR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 5, 8/2008 MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9130H
MRF6S9130HR3/HSR3
MRFE6S9130HR3/HSR3.
PCN12895
MRF6S9130HR3
MRF6S9130HSR3
MRF6S9130HR3
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ATC100B470
Abstract: ESME630E MRFE6S9130HR3 A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRFE6S9130HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9130H Rev. 0, 4/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9130HR3 MRFE6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRFE6S9130H
MRFE6S9130HR3
MRFE6S9130HSR3
MRFE6S9130HR3
ATC100B470
ESME630E
A114
A115
AN1955
ATC100B470JT500XT
C101
JESD22
MRFE6S9130HSR3
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A114
Abstract: AN1955 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 5, 8/2008 MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION N - Channel Enhancement - Mode Lateral MOSFETs
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MRF6S9130H
MRF6S9130HR3/HSR3
MRFE6S9130HR3/HSR3.
PCN12895
MRF6S9130HR3
MRF6S9130HSR3
A114
AN1955
JESD22
MRF6S9130H
MRF6S9130HSR3
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Chemi-Con DATE CODES
Abstract: MRFE6S9130HR3 A114 A115 AN1955 C101 JESD22 MRFE6S9130HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9130H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9130HR3 MRFE6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRFE6S9130H
MRFE6S9130HR3
MRFE6S9130HSR3
MRFE6S9130HR3
Chemi-Con DATE CODES
A114
A115
AN1955
C101
JESD22
MRFE6S9130HSR3
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power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,
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MRF8P9040N
Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9130H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
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MRFE6S9130H
MRFE6S9130HR3
MRFE6S9130HSR3
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