MRF8P20161HSR3 Search Results

MRF8P20161HSR3 Price and Stock

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Rochester Electronics LLC MRF8P20161HSR3 RF MOSFET LDMOS 28V NI780
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DigiKey	MRF8P20161HSR3	Bulk	1,217		3	1 - 10 $110.04 100 $110.04 1000 $110.04 10000 $110.04	Buy Now
NXP Semiconductors MRF8P20161HSR3 RF MOSFET LDMOS 28V NI780
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DigiKey	MRF8P20161HSR3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Freescale Semiconductor MRF8P20161HSR3 RF Power Field-Effect Transistor, 2-Element, S Band, N-Channel, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MRF8P20161HSR3		1,217		1	1 $105.81 10 $105.81 100 $99.46 1000 $89.94 10000 $89.94	Buy Now

MRF8P20161HSR3 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRF8P20161HSR3		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-780S		Original	PDF

MRF8P20161HSR3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8P20161HS MRF8P20161HSR3
mosfet J442 Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596 Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8P20161HS MRF8P20161HSR3 mosfet J442 ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	PDF
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original	PDF
BA 7891 NG Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 Text: 释放潜能 RF 手册第 16 版高性能 RF 产品应用和设计手册 2012 年 6 月恩智浦助您释放下一代 RF 和微波设计的潜能恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进	Original	PDF	PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
6 pin TRANSISTOR SMD CODE CAA Abstract: TEA6721 BF991 spice model Text: RF マニュアル第 16 版ハイパフォーマンスRF製品用のアプリケーションおよび設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォーマンスがさらに向上 NXPの RF マニュアルは、	Original	PDF