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    MRF6 Price and Stock

    Flip Electronics MRF6S20010NR1

    RF MOSFET LDMOS 28V TO270-2
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    DigiKey MRF6S20010NR1 Bulk 2,890 20
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    Rochester Electronics LLC MRF6S20010NR1

    RF MOSFET LDMOS 28V TO270-2
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    DigiKey MRF6S20010NR1 Bulk 500 9
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    Rochester Electronics LLC MRF6VP3091NR1

    RF MOSFET LDMOS 50V TO270-4
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    DigiKey MRF6VP3091NR1 Bulk 480 3
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    NXP Semiconductors MRF6S20010GNR1

    RF MOSFET LDMOS 28V TO270-2
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    DigiKey MRF6S20010GNR1 Cut Tape 158 1
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    Newark MRF6S20010GNR1 Cut Tape 1
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    NXP Semiconductors MRF6V10010NR4

    RF MOSFET LDMOS 50V PLD-1.5
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    DigiKey MRF6V10010NR4 Cut Tape 149 1
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    Mouser Electronics MRF6V10010NR4 7
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    Verical MRF6V10010NR4 27 1
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    Rochester Electronics MRF6V10010NR4 170 1
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    Richardson RFPD MRF6V10010NR4 27 1
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    Find more MRF6 price and stock on Findchips.com

    MRF6 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRF60 Unknown Transistor Replacements Scan PDF
    MRF600 Codi Semiconductor 1.0A Iout, 600V Vrrm Fast Recovery Rectifier Scan PDF
    MRF600 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    MRF600 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MRF601 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MRF601 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    MRF602 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MRF603 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MRF603 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MRF603 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF603 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MRF603 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    MRF604 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    MRF604 Motorola The European Selection Data Book 1976 Scan PDF
    MRF604 Motorola European Master Selection Guide 1986 Scan PDF
    MRF604 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MRF604 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MRF604 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF604 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MRF604 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    ...

    MRF6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF6S21140HR3

    Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3

    MRF6S19060N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19060NR1 MRF6S19060NBR1 Designed for N- CDMA base station applications with frequencies from 1930


    Original     		PDF MRF6S19060N MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060NR1 MRF6S19060N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6P9220H MRF6P9220HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1

    MRF653

    Abstract: MRF653 circuit test
    Text: MOTOROLA Order this document by MRF653/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF653 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics


    Original     		PDF MRF653/D MRF653 MRF653 MRF653 circuit test

    ERIE CAPACITORS

    Abstract: SAHA Mica capacitors MRF658 erie capacitor SAHA trimmer 3-30 pf nippon capacitors GRH710 MURATA ERIE CAPACITOR MOTOROLA 381 equivalent
    Text: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.


    Original     		PDF MRF658/D MRF658 MRF658/D* ERIE CAPACITORS SAHA Mica capacitors MRF658 erie capacitor SAHA trimmer 3-30 pf nippon capacitors GRH710 MURATA ERIE CAPACITOR MOTOROLA 381 equivalent

    transistor rf m 1104

    Abstract: motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641
    Text: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Power Transistor CASE 333A– 02, STYLE 2 C9 +VCC T2 R1 C8 P1 C5 D1 C7 C6 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 50 W C1, C3 C2, C7


    Original     		PDF MRF6414PHT/D MRF6414 1N4007 SD135 MRF6414 MRF6414PHT/D* transistor rf m 1104 motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    5659065-3B

    Abstract: arco 463 56-590-65-3B 56590653B
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz


    Original     		PDF MRF607 To-39 MRF607 56-590-65-3B 5659065-3B arco 463 56-590-65-3B 56590653B

    th 2190

    Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101

    mrf641

    Abstract: 1117 ADC
    Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.


    Original     		PDF MRF641/D MRF641 mrf641 1117 ADC

    MRF607

    Abstract: 56-590-65-3B
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • 12.5V Silicon NPN, TO-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz


    Original     		PDF MRF607 MRF607 56-590-65-3B 56-590-65-3B

    hatching machine

    Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications


    Original     		PDF MRF6V2150N MRF6V2150NB MRF6V2150N hatching machine MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22

    A113

    Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


    Original     		PDF MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 MRF6S9045MR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10250HS MRF6V10250HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P23190H MRF6P23190HR6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 5,12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6P21190HR6

    MRF603

    Abstract: 1803 TRANSISTOR equivalent K 2642 transistor R/MRF603
    Text: MRF603 silicon T h e R F L in e 1 0 W - 175 MHz R F POWER T R A N SISTO R NPN SILICO N NPN SILIC O N R F POWER TRA N SISTO R . . .d esig n ed fo r 1 2 .5 V o lt V H F large-signal p o w e r a m p lifie r a p p lic a ­ t io n s re q u ire d in m ilit a ry and in d u stria l e q u ip m e n t o p era tin g t o 3 0 0


    OCR Scan     		PDF MRF603 175MHz) VK-200-20/4B MRF603 1803 TRANSISTOR equivalent K 2642 transistor R/MRF603