MRF373SR1 Search Results

MRF373SR1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MRF373SR1		Motorola	470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET		Original	PDF

MRF373SR1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
c19a Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1 Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.	Original	PDF	MRF373R1 MRF373SR1 MRF373R1 MRF373/D c19a motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373SR1
GX-0300-55 Abstract: LTD M250 B07T MRF373R1 MRF373SR1 NI-360S NI-360 Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these	Original	PDF	MRF373/D MRF373R1 MRF373SR1 MRF373R1 GX-0300-55 LTD M250 B07T MRF373SR1 NI-360S NI-360
MRF373R1 Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these	Original	PDF	MRF373/D MRF373R1 MRF373SR1 MRF373R1 C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P

Catalog Datasheet

MFG & Type

PDF

Document Tags

c19a

Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

Original

PDF

MRF373R1 MRF373SR1 MRF373R1 MRF373/D c19a motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373SR1

GX-0300-55

Abstract: LTD M250 B07T MRF373R1 MRF373SR1 NI-360S NI-360
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these

Original

PDF

MRF373/D MRF373R1 MRF373SR1 MRF373R1 GX-0300-55 LTD M250 B07T MRF373SR1 NI-360S NI-360

MRF373R1

Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these

Original

PDF

MRF373/D MRF373R1 MRF373SR1 MRF373R1 C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P