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    MRF18090 Search Results

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    NXP Semiconductors MRF18090AR3

    RF MOSFET LDMOS 26V NI880H
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    Motorola Semiconductor Products MRF18090B

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, L BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components MRF18090B 1
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    MRF18090 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF18090A Freescale Semiconductor MRF18090AR3 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18090A Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    MRF18090A Motorola LATERAL N-CHANNEL RF POWER MOSFETS Original PDF
    MRF18090A Motorola MRF18090A, MRF18090AS 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF18090A Motorola RF Power Field Effect Transistors Scan PDF
    MRF18090AR3 Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    MRF18090AR3 Freescale Semiconductor 90W GSM 1.8GHZ NI880 Original PDF
    MRF18090AR3 Freescale Semiconductor 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18090AS Freescale Semiconductor 1.80-1.88 GHz, 90 W, 26 V, LATERAL N-CHANNEL, BROADBAND RF POWER MOSFETS Original PDF
    MRF18090AS Motorola RF Power Field Effect Transistor Original PDF
    MRF18090AS Motorola 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS Original PDF
    MRF18090AS Motorola RF Power Field Effect Transistors Scan PDF
    MRF18090B Freescale Semiconductor MRF18090BR3, MRF18090BSR3 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs Original PDF
    MRF18090B Motorola MRF18090B, MRF18090BS 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF18090B Motorola RF Power Field Effect Transistors Scan PDF
    MRF18090BR3 Freescale Semiconductor 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18090BS Motorola 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs Original PDF
    MRF18090BS Motorola RF Power Field Effect Transistors Scan PDF
    MRF18090BSR3 Freescale Semiconductor 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF

    MRF18090 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor marking z8

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking z8

    TLX8-0300

    Abstract: transistor J585
    Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AR3 TLX8-0300 transistor J585

    smd transistor marking z8

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking z8

    smd wb1

    Abstract: smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090A MRF18090AS
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18090A/D MRF18090A MRF18090AS MRF18090A smd wb1 smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090AS

    smd wb1 transistor

    Abstract: smd transistor wb1 smd wb1 smd wb2 sot-23 wb2 wb1 sot-23 WB1 SOT23 J585 mosfet smd transistor M3 sot23 J585
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AS smd wb1 transistor smd transistor wb1 smd wb1 smd wb2 sot-23 wb2 wb1 sot-23 WB1 SOT23 J585 mosfet smd transistor M3 sot23 J585

    smd transistor M3 sot23

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BS smd transistor M3 sot23

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF18090B Rev. 7, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 MRF18090BR3

    PHILIPS capacitors 0.1 mf

    Abstract: Transistor t 2 smd motorola
    Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AR3 PHILIPS capacitors 0.1 mf Transistor t 2 smd motorola

    smd mosfet z8

    Abstract: smd z5 transistor 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS irl 1310 SMD TRANSISTORS AAA
    Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from


    Original     		PDF MRF18090B/D MRF18090B MRF18090BS MRF18090B smd mosfet z8 smd z5 transistor 465B BC847 GSM1900 LP2951 MRF18090BS irl 1310 SMD TRANSISTORS AAA

    TLX8-0300

    Abstract: "capacitor philips" transistor motorola 114-8 motorola s 114-8 smd mosfet z8 smd z5 transistor transistor motorola 351 465B GSM1800 MRF18090A
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies


    Original     		PDF MRF18090A/D MRF18090A MRF18090AS MRF18090A TLX8-0300 "capacitor philips" transistor motorola 114-8 motorola s 114-8 smd mosfet z8 smd z5 transistor transistor motorola 351 465B GSM1800

    transistor smd z9

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from


    Original     		PDF MRF18090B/D MRF18090B MRF18090BS MRF18090B/D transistor smd z9

    smd transistor marking j8

    Abstract: smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8
    Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8

    smd transistor marking j6

    Abstract: SMD Transistor z6 C5 MARKING TRANSISTOR transistor 6 pin SMD Z2 marking Z4 smd z5 transistor transistor smd z9 Z9 TRANSISTOR SMD 465B BC847
    Text: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 MRF18090BR3 smd transistor marking j6 SMD Transistor z6 C5 MARKING TRANSISTOR transistor 6 pin SMD Z2 marking Z4 smd z5 transistor transistor smd z9 Z9 TRANSISTOR SMD 465B BC847

    transistor J585

    Abstract: transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BS transistor J585 transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 8, 10/2008 RF Power Field Effect Transistor MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AR3

    H6050

    Abstract: Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805
    Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18090B/D MRF18090B MRF18090BS H6050 Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805

    smd transistor wb1

    Abstract: wb1 sot package sot-23
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18090A/D MRF18090A MRF18090AS smd transistor wb1 wb1 sot package sot-23

    smd transistor wb1

    Abstract: smd wb2 wb1 sot-23 smd wb1 sot-23 wb2 WB1 SOT23 smd wb1 transistor wb1 sot package sot-23 Z3 SMD sot 23 motorola s 114-8
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from


    Original     		PDF MRF18090A/D MRF18090A MRF18090AS MRF18090A smd transistor wb1 smd wb2 wb1 sot-23 smd wb1 sot-23 wb2 WB1 SOT23 smd wb1 transistor wb1 sot package sot-23 Z3 SMD sot 23 motorola s 114-8

    on 5297 transistor

    Abstract: transistor c 5299 100B6R8CW 293D106X9035D 100B3R3BW capacitor philips motorola s 114-8 100B120GW 100B100GW "capacitor philips"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AS on 5297 transistor transistor c 5299 100B6R8CW 293D106X9035D 100B3R3BW capacitor philips motorola s 114-8 100B120GW 100B100GW "capacitor philips"

    smd transistor marking j2

    Abstract: Transistor z1
    Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AR3 smd transistor marking j2 Transistor z1

    transistor motorola 114-8

    Abstract: Transistor z1 transistor motorola 351 motorola s 114-8 465B GSM1800 MRF18090A MRF18090AR3 motorola 1815 motorola 114-8
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF18090AR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies


    Original     		PDF MRF18090A/D MRF18090AR3 transistor motorola 114-8 Transistor z1 transistor motorola 351 motorola s 114-8 465B GSM1800 MRF18090A MRF18090AR3 motorola 1815 motorola 114-8

    smd transistor marking j6

    Abstract: transistor 6 pin SMD Z2 smd transistor marking j8 SMD Transistor z6 transistor J585 transistor smd z9 C5 MARKING TRANSISTOR TRANSISTOR Z4 SMD transistor 2x sot 23 TRANSISTOR SMD 2X K
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 LIFETIME BUY Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090AR3 MRF18090A smd transistor marking j6 transistor 6 pin SMD Z2 smd transistor marking j8 SMD Transistor z6 transistor J585 transistor smd z9 C5 MARKING TRANSISTOR TRANSISTOR Z4 SMD transistor 2x sot 23 TRANSISTOR SMD 2X K

    SMD Transistor z6

    Abstract: 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS
    Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18090B/D MRF18090B MRF18090BS MRF18090B SMD Transistor z6 465B BC847 GSM1900 LP2951 MRF18090BS

    465B

    Abstract: BC847 GSM1900 LP2951 MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking z8
    Text: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 MRF18090BR3 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BSR3 smd transistor marking j8 smd transistor marking z8