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    Rochester Electronics LLC MRF18030ALSR5

    RF MOSFET LDMOS 26V NI400
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    DigiKey MRF18030ALSR5 Bulk 7
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    Freescale Semiconductor MRF18030ALSR5

    FET RF 65V 1.88GHZ NI-400S
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    Rochester Electronics MRF18030ALSR5 50 1
    • 1 $45.77
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    MRF18030A Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRF18030A Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF18030A Motorola RF Power Field Effect Transistors Original PDF
    MRF18030ALR3 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF18030ALR3 Motorola RF Power Field Effect Transistors Original PDF
    MRF18030ALSR3 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF18030ALSR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-400S Original PDF
    MRF18030ALSR3 Motorola RF Power Field Effect Transistors Original PDF
    MRF18030ALSR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-400S Original PDF
    MRF18030AR3 Freescale Semiconductor GSM/GSM EDGE 1.80-1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18030AR3 Motorola RF Power Field Effect Transistor Original PDF
    MRF18030AS Freescale Semiconductor FET, Enhancement, N Channel, 2 VThreshold Original PDF
    MRF18030ASR Motorola 1.8 - 1.88 GHz, 30 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Original PDF
    MRF18030ASR3 Freescale Semiconductor GSM/GSM EDGE 1.80-1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18030ASR3 Motorola RF Power Field Effect Transistor Original PDF

    MRF18030A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF18030A

    Abstract: IRL 724 N 400S MRF18030ALR3 MRF18030ALSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3


    Original     		PDF MRF18030A/D MRF18030ALR3 MRF18030ALSR3 MRF18030ALR3 MRF18030A IRL 724 N 400S MRF18030ALSR3

    zo 405 mf

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 zo 405 mf

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 MRF18030A/D

    IRL 724 N

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 IRL 724 N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030A-1 Rev. 9, 10/2008 RF Power Field Effect Transistor MRF18030ALR3 Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A--1 MRF18030ALR3 MRF18030A--1

    MRF18030A

    Abstract: 2019 gain 400S MRF18030AR3 MRF18030ASR3 1003 c2 J1022
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030AR3 MRF18030ASR3 MRF18030A 2019 gain 400S MRF18030ASR3 1003 c2 J1022

    IRL 724

    Abstract: IRL 724 N MRF18030A
    Text: Freescale Semiconductor Technical Data MRF18030A Rev. 7, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A MRF18030ALR3 MRF18030ALSR3 IRL 724 IRL 724 N

    IRL 724 N

    Abstract: MRF18030A 400S MRF18030ALR3 MRF18030ALSR3 1003 c2
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030A Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A MRF18030ALR3 MRF18030ALSR3 IRL 724 N MRF18030A 400S MRF18030ALSR3 1003 c2

    MRF18030A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030A-2 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A--2 MRF18030ALSR3 MRF18030A--2 MRF18030A

    MRF18030A

    Abstract: No abstract text available
    Text: Document Number: MRF18030A Rev. 10, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18030ALSR3 LIFETIME BUY Designed for GSM and EDGE base station applications with frequencies


    Original     		PDF MRF18030A MRF18030ALSR3 MRF18030A

    MRF18030A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030A Rev. 9, 10/2008 RF Power Field Effect Transistor MRF18030ALR3 Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A MRF18030ALR3 MRF18030A

    MRF18030A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18030A Rev. 7, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A MRF18030ALR3 MRF18030ALSR3

    marking j9

    Abstract: marking Z4 400S EB212 MRF18030A MRF18030ALSR3 MRF18030ALS
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18030ALSR3 LIFETIME BUY Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030ALSR3 MRF18030A marking j9 marking Z4 400S EB212 MRF18030A MRF18030ALSR3 MRF18030ALS

    400S

    Abstract: MRF18030A MRF18030AR3 MRF18030ASR3
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030A/D MRF18030AR3 MRF18030ASR3 400S MRF18030A MRF18030ASR3

    MRF18030ALSR3

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18030AR3 RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ASR3 Designed for GSM and EDGE base station applications with frequencies


    Original     		PDF MRF18030A/D MRF18030AR3 MRF18030ALR3 MRF18030ASR3 MRF18030ALSR3 MRF18030ALSR3 MRF18030A/D

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF Suffix60 MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    transistor 131

    Abstract: MRF18060ALR3 transistor Z6 MRF18060A
    Text: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors MRF18060ALR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060A MRF18060ALR3 MRF18060ALSR3 transistor 131 transistor Z6

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original     		PDF SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H