mrf154 amplifier
Abstract: mc1723 ic nippon ferrite AN749 application of mc1723 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS MRF154 rf mosfet power amplifier 1N4148 1N5362
Text: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.
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MRF154/D
MRF154
mrf154 amplifier
mc1723 ic
nippon ferrite
AN749
application of mc1723
MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
MRF154
rf mosfet power amplifier
1N4148
1N5362
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mrf154 amplifier
Abstract: AN749 MRF154 trifilar mc1723 ic 2225C MC1723 application notes 36803 T1/FERRITE TRANSFORMER Nippon capacitors
Text: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. ARCHIVE INFORMATION
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MRF154/D
MRF154
mrf154 amplifier
AN749
MRF154
trifilar
mc1723 ic
2225C
MC1723 application notes
36803
T1/FERRITE TRANSFORMER
Nippon capacitors
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AN749
Abstract: mrf154 amplifier Fair-Rite bead MC1723 MRF154 1N4148 1N5362
Text: Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.
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MRF154/D
MRF154
AN749
mrf154 amplifier
Fair-Rite bead
MC1723
MRF154
1N4148
1N5362
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.
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MRF154/D
MRF154
MRF154/D*
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mrf154 amplifier
Abstract: on 5269 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF154
MRF154
mrf154 amplifier
on 5269 transistor
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MRF154
Abstract: RF POWER MOSFET MRF154 A
Text: MRF154 Broadband RF Power MOSFET 600W, to 80MHz, 50V Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range. M/A-COM Products Released - Rev. 07.07 Product Image N–Channel enhancement mode MOSFET • Specified 50 volts, 30 MHz characteristics
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MRF154
80MHz,
MRF154
RF POWER MOSFET
MRF154 A
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w amplifier 30mhz
Abstract: 1N5362
Text: VRF154FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF154FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
w amplifier 30mhz
1N5362
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10k trimpot
Abstract: 10k trimpot vertical thermistor 10k ohm arco mica trimmer MRF154 equivalent mica trimmer gore MC1723 MC1723 application notes mrf154
Text: VRF154FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
10k trimpot
10k trimpot vertical
thermistor 10k ohm
arco mica trimmer
MRF154 equivalent
mica trimmer
gore
MC1723
MC1723 application notes
mrf154
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VRF154
Abstract: No abstract text available
Text: VRF154FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
VRF154
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VRF154
Abstract: No abstract text available
Text: VRF154FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
VRF154
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balun 50 ohm
Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar
Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
balun 50 ohm
10k trimpot
mrf154 amplifier
wl gore
1N4148
1N5362
2204B
MRF154
trifilar
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VRF154
Abstract: arco mica trimmer wound trifilar 10 turns
Text: VRF154FL G VRF154FLMP(G) 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
100MHz
30MHz,
MRF154
VRF154
arco mica trimmer
wound trifilar 10 turns
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arco mica trimmer
Abstract: 1N4148 1N5362 2204B MRF154 VRF154FL
Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
arco mica trimmer
1N4148
1N5362
2204B
MRF154
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Untitled
Abstract: No abstract text available
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
MRF154
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Untitled
Abstract: No abstract text available
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
MRF154
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Untitled
Abstract: No abstract text available
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
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SIT Static Induction Transistor
Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are
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AN1529/D
AN1529
AN1529/D*
SIT Static Induction Transistor
create uhf vhf tv matching transformer
AR165S
Granberg
AR-165S
power bjt advantages and disadvantages
all mosfet vhf power amplifier narrow band
rf POWER BJTs
mrf154 amplifier
bjt ce amplifier
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • 600 W, SO V, 80 MHz N-CHANNEL
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MRF154
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mrf154 amplifier
Abstract: MRF154 Mrf154 M
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF154
mrf154 amplifier
Mrf154 M
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TH 2267
Abstract: equivalent transistor broadband transformers
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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zener T 4148
Abstract: zener 1n 4148 1n 4148 zener diode RF154 zener 1n f154 749 MOSFET TRANSISTOR motorola Zener Diode 4148
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages In the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF154
zener T 4148
zener 1n 4148
1n 4148 zener diode
RF154
zener 1n
f154
749 MOSFET TRANSISTOR motorola
Zener Diode 4148
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749 MOSFET TRANSISTOR motorola
Abstract: RF154 dss125
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF154 The RF MOSFET Line RF P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode MOSFET 600 W, 50 V. 80 MHz N-CHANNEL BROADBAND RF POWER MOSFET . . . designed prim arily for linear large*signal output stages in the 2-100 MHz frequency range.
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RF154
749 MOSFET TRANSISTOR motorola
RF154
dss125
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0.1 mF ceramic disc capacitor
Abstract: MRF157 keystone carbon Fair-Rite ATC
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Pow er Field Effect Transistor N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts
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MRF157
0.1 mF ceramic disc capacitor
keystone carbon
Fair-Rite ATC
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723 VOLTAGE REGULATOR
Abstract: keystone carbon thermistor MC1723 rmc disc capacitor
Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line MRF157 Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics
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MRF157
MRF157
723 VOLTAGE REGULATOR
keystone carbon thermistor
MC1723
rmc disc capacitor
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