MRF151G
Abstract: mrf151g 300 1202 transistor
Text: MRF151G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS
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MRF151G
MRF151G
mrf151g 300
1202 transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151G hf amplifier
Abstract: MRF151G MRF151G Voltage min-max ferrite 1 phase transformer 0.14 ratio 120 watt G10 zener diode mrf151g 300 TOROIDS Design Considerations AN211A rf amplifier circuit mrf151g
Text: Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151G/D
MRF151G
MRF151G hf amplifier
MRF151G
MRF151G Voltage min-max
ferrite 1 phase transformer 0.14 ratio 120 watt
G10 zener diode
mrf151g 300
TOROIDS Design Considerations
AN211A
rf amplifier circuit mrf151g
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MRF151G hf amplifier
Abstract: MRF151G Nippon capacitors
Text: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151G/D
MRF151G
MRF151G/D
MRF151G hf amplifier
Nippon capacitors
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MRF151G
Abstract: MRF151G hf amplifier motorola MOSFET 935 0948 power fet motorola AN211A mrf151g 300 AN211A rf amplifier circuit mrf151g Nippon capacitors
Text: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151G/D
MRF151G
MRF151G
MRF151G hf amplifier
motorola MOSFET 935
0948 power fet
motorola AN211A
mrf151g 300
AN211A
rf amplifier circuit mrf151g
Nippon capacitors
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MRF151G
Abstract: MRF151G hf amplifier MRF151G Voltage min-max AN211A motorola bipolar transistor data manual mosfet HF amplifier mrf151g 300 NIPPON CAPACITORS DC bias of FET arco capacitors
Text: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151G/D
MRF151G
MRF151G/D*
MRF151G
MRF151G hf amplifier
MRF151G Voltage min-max
AN211A
motorola bipolar transistor data manual
mosfet HF amplifier
mrf151g 300
NIPPON CAPACITORS
DC bias of FET
arco capacitors
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mrf151g 300
Abstract: MRF151G
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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mrf151g 300
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MRF151G
Abstract: mrf151g 300 mosfet m
Text: MRF151G Part Status: Released RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features M/A-COM Products RoHS Compliant Package Outline Guaranteed Performance at 175 MHz, 50 V: • • • • • • Output Power — 300 W
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MRF151G
mrf151g 300
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MRF151G
Abstract: FM300 FM300-108M FM300-108 300w amplifier mrf151g date application MOSFET transmitters fm 300w fm amplifier mrf151g 300 SOCKET HEAD CAP SCREWS
Text: FM300-108M 300 W - FM Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 87.5 ÷ 108 MHz 48 Volts Input/Output 50 Ω
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FM300-108M
MRF151G
GR00195
FM300
FM300-108M
FM300-108
300w amplifier
mrf151g date
application MOSFET transmitters fm
300w fm amplifier
mrf151g 300
SOCKET HEAD CAP SCREWS
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HF Amplifier 300w
Abstract: hf amplifier 100w mosfet HF amplifier hf class AB power amplifier mosfet 300-0130M MRF151G mrf151g date MRF151G hf amplifier mrf151g 300 GR00166
Text: HF 300-0130M 300 W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 1 ÷ 30 MHz 50 Volts Input / Output 50 Ohm Pout : 300 W min Gain : 22 dB typ.
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300-0130M
MRF151G
10ANY
GR00166
HF Amplifier 300w
hf amplifier 100w
mosfet HF amplifier
hf class AB power amplifier mosfet
300-0130M
mrf151g date
MRF151G hf amplifier
mrf151g 300
GR00166
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VRF151G
Abstract: arco capacitors 262 2204b MRF151G
Text: VRF151G PRELIMINARY 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast
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175MHz
VRF151G
175MHz.
175MHz,
MRF151G
arco capacitors 262
2204b
MRF151G
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"RF MOSFET" 300W
Abstract: No abstract text available
Text: VRF151G PRELIMINARY 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast
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VRF151G
175MHz
VRF151G
175MHz.
175MHz,
MRF151G
"RF MOSFET" 300W
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VRF151G
Abstract: No abstract text available
Text: VRF151G PRELIMINARY 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast
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175MHz
VRF151G
175MHz.
175MHz,
MRF151G
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MRF151G
Abstract: VRF151G 2204B
Text: VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast
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VRF151G
175MHz
VRF151G
175MHz.
175MHz,
MRF151G
MRF151G
2204B
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Untitled
Abstract: No abstract text available
Text: VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast
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VRF151G
175MHz
VRF151G
175MHz.
175MHz,
MRF151G
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9v 500ma transformer
Abstract: arco capacitors 2204B MRF151G VRF151G
Text: VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast
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VRF151G
175MHz
VRF151G
175MHz.
175MHz,
MRF151G
9v 500ma transformer
arco capacitors
2204B
MRF151G
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Untitled
Abstract: No abstract text available
Text: VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast
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175MHz
VRF151G
175MHz.
175MHz,
MRF151G
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transistors cross reference list
Abstract: MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W BLF246 MRF140 blf404 MRF177 Motorola transistors MRF158
Text: PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Philips Type UHF Motorola Type BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF166C BLF542 MRF160 BLF404 BLF521 MRF158 VHF
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BLF548
MRF275G
MRF275L
MRF177
MRF176GU
MRF175LU
MRF175GU
BLF546
MRF166W
BLF544
transistors cross reference list
MOTOROLA circuit for mrf150
CLASS AB
mrf151g 300
MRF166W
BLF246
MRF140
blf404
MRF177
Motorola transistors MRF158
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MRF151G
Abstract: MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151G The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151G
MRF151G
MRF151G hf amplifier
testing of mosfet gain control
rf amplifier circuit mrf151g
RF TOROIDS Design Considerations
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MRF151G
Abstract: L8776 Nippon capacitors rf amplifier circuit mrf151g
Text: MOTOROLA O rder this docum ent by M RF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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RF151G/D
MRF151G
L8776
Nippon capacitors
rf amplifier circuit mrf151g
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MRF151G
Abstract: BH Rf transistor mrf151g 300 MRF151G hf amplifier
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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16dBTyp)
MRF151G
BH Rf transistor
mrf151g 300
MRF151G hf amplifier
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MRF151G
Abstract: application MOSFET transmitters fm rf amplifier circuit mrf151g MRF151G hf amplifier
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151G
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151G
MRF151G
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MRF151G
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF151G RF P o w e r Field-Effect T ra n sisto r N-Channel Enhancement-Mode MOSFET . . . designed fo r b roadband co m m ercia l and m ilita ry a pp licatio n s at fre q u en cies to 175 MHz. The h ig h pow er, high gain and broadband perfo rm a n ce o f th is device makes
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RF151G
MRF151G
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