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    MRF151 Price and Stock

    MACOM MRF151A

    RF MOSFET 50V P-244
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    DigiKey MRF151A Tray 1 1
    • 1 $115.45
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    Mouser Electronics MRF151A 47
    • 1 $115.45
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    Richardson RFPD MRF151A 20
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    MACOM MRF151

    RF MOSFET 50V
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    MRF151 1
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    Chip1Stop MRF151 260
    • 1 $66.7
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    NXP Semiconductors MRF1513NT1

    RF MOSFET LDMOS 12.5V PLD-1.5
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    Newark MRF1513NT1 Reel 1,000
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    Gowanda Electronics Corporation SMRF1512-223M

    WW EPOXY COATED CHIP INDUCTOR
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    Gowanda Electronics Corporation SMRF1512-181K

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    DigiKey SMRF1512-181K Reel 500
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    Find more MRF151 price and stock on Findchips.com

    MRF151 Datasheets (45)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF151 M/A-COM 150 W, 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Original PDF
    MRF151 Motorola N-CHANNEL BROADBAND RF POWER MOSFET Original PDF
    MRF151 Motorola MRF151 RF Power Transistor Original PDF
    MRF151 NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original PDF
    MRF1511 Freescale Semiconductor MRF1511T1 RF Power Transistor Original PDF
    MRF1511 Motorola MRF1511T1 RF Power Transistor Original PDF
    MRF1511N Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    MRF1511NT1 Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    MRF1511NT1 Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    MRF1511NT1 Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    MRF1511T1 Freescale Semiconductor 175 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF1511T1 Motorola RF Power Field-Effect Transistor Original PDF
    MRF1513 Freescale Semiconductor MRF1513T1 520 MHz, 3 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF1513 Motorola MRF1513T1 520 MHz, 3 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET RF Power Transistor Original PDF
    MRF1513N Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    MRF1513NT1 Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Original PDF
    MRF1513NT1 Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    MRF1513NT1 Freescale Semiconductor RF Power Field Effect Transistor Original PDF
    MRF1513T1 Freescale Semiconductor TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,2A I(D),PLD Original PDF
    MRF1517 Freescale Semiconductor MRF1517T1 RF Power Transistor Original PDF

    MRF151 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF151G

    Abstract: MRF151G hf amplifier MRF151G Voltage min-max AN211A motorola bipolar transistor data manual mosfet HF amplifier mrf151g 300 NIPPON CAPACITORS DC bias of FET arco capacitors
    Text: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF151G/D MRF151G MRF151G/D* MRF151G MRF151G hf amplifier MRF151G Voltage min-max AN211A motorola bipolar transistor data manual mosfet HF amplifier mrf151g 300 NIPPON CAPACITORS DC bias of FET arco capacitors

    MRF1513 equivalent

    Abstract: 2743021446 MRF1513 AN721 MRF1513T1 J524 AN211A AN215A Transistor J438 J182 transistor
    Text: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1513/D MRF1513T1 MRF1513T1 MRF1513 equivalent 2743021446 MRF1513 AN721 J524 AN211A AN215A Transistor J438 J182 transistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF1517N MRF1517NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF1513 Rev. 7, 5/2006 Replaced by MRF1513NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF1513 MRF1513NT1. MRF1513T1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1518/D MRF1518T1

    MRF255 equivalent

    Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
    Text: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341


    Original     		PDF MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 MRF255 equivalent motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255

    Untitled

    Abstract: No abstract text available
    Text: MRF151 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF151 is a gold metallized N-Channel Enhancement mode MOSFET intended for use in 50 Vdc large signal output to 200 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A S FULL R FEATURES: D Ø.125 NOM.


    Original     		PDF MRF151 MRF151 112x45° Hz/150 08BVDSS MRF151MP

    AN721

    Abstract: J361 AN211A AN215A MRF1518T1 transistor j334 j327 transistor
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial


    Original     		PDF MRF1518/D MRF1518T1 MRF1518T1 AN721 J361 AN211A AN215A transistor j334 j327 transistor

    J-031

    Abstract: AN211A AN215A AN721 MRF1511T1
    Text: MOTOROLA Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1511/D MRF1511T1 MRF1511T1 DEVICEMRF1511/D J-031 AN211A AN215A AN721

    0.5 W silicon zener diode

    Abstract: TRIMMER capacitor 82 pF MRF151 mosfet 440 mhz MRF1518 AN211A AN215A AN721 MRF1518T1 MRF-151
    Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1518/D MRF1518T1 MRF1518T1 DEVICEMRF1518/D 0.5 W silicon zener diode TRIMMER capacitor 82 pF MRF151 mosfet 440 mhz MRF1518 AN211A AN215A AN721 MRF-151

    2743021446

    Abstract: j494 AN215A AN721 FM LDMOS freescale transistor A113 AN211A AN4005 EB212 MRF1513N
    Text: Freescale Semiconductor Technical Data Document Number: MRF1513N Rev. 10, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF1513N MRF1513NT1 2743021446 j494 AN215A AN721 FM LDMOS freescale transistor A113 AN211A AN4005 EB212 MRF1513N

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1517T1 AN215A,

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1518T1 AN215A,

    MHZ50

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF1513 MRF1513NT1 MRF1513T1 MHZ50

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 4, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF1517N MRF1517NT1 MRF1517N

    5252 F 0911

    Abstract: 5252 F mosfet 5252 F 0918 1030F
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF

    MRF1518

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1518/D MRF1518T1 DEVICEMRF1518/D MRF1518

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1513/D MRF1513T1 MRF1513/D

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF1518N Rev. 11, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1518NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF1518N MRF1518NT1

    AN721

    Abstract: MRF1513NT1 A113 AN211A AN215A AN4005 EB212 MRF1513N FM LDMOS freescale transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF1513N Rev. 11, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF1513N MRF1513NT1 AN721 MRF1513NT1 A113 AN211A AN215A AN4005 EB212 MRF1513N FM LDMOS freescale transistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511T1 The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1511T1 AN215A,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513T1 The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


    Original     		PDF MRF1513T1 AN215A,

    MRF151G

    Abstract: MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151G The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF MRF151G MRF151G MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations

    MRF151G

    Abstract: L8776 Nippon capacitors rf amplifier circuit mrf151g
    Text: MOTOROLA O rder this docum ent by M RF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF RF151G/D MRF151G L8776 Nippon capacitors rf amplifier circuit mrf151g