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    Abstract: MRC100 mrc101 MRC103 BLV194
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures


    Original     		PDF BLV194 OT171 mrc102 MRC100 mrc101 MRC103 BLV194

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    Abstract: No abstract text available
    Text: Philips Semiconductors b b 5 3 ^ 31 DDSTEm M il H A P X UHF power transistor BLV194 bTE D — — AUER PHILIPS/DISCRETE FEATURES • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.


    OCR Scan     		PDF BLV194 MRC099 MRC097