MPSH10
Abstract: MPSH11 MPS-H10 MPSH10 H parameters
Text: MOTOROLA Order this document by MPSH10/D SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc
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MPSH10/D
MPSH10
MPSH11
MPSH10/D*
MPSH10
MPSH11
MPS-H10
MPSH10 H parameters
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MPSH10
Abstract: UHF UHF Transistors
Text: MOTOROLA Order this document by MPSH10/D SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc
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MPSH10/D
MPSH10
MPSH11
226AA)
MPSH10/D*
UHF UHF Transistors
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mpsh10
Abstract: MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p
Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C C E E TO-92 B SOT-23 B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
MPSH10
OT-23
MPSH10 fairchild transistor
MPSH10 s parameters
TF135
MMBTH10 Spice Model
MPS-H10
BF308
1358p
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MPSH10 fairchild transistor
Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
OT-23
MPSH10
MPSH10 fairchild transistor
MMBTH10 Spice Model
MPS-H10
MMBTH10
TRANSISTOR C 3223
1358p
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MPSH10
Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
OT-23
MPSH10
MMBTH10 Spice Model
NPN power transistor spice
y-parameter
MMBTH10
TRANSISTOR C 3223
MPS-H10
MPSH10 s parameters
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MPSH10
Abstract: MPSH10 H parameters
Text: ON Semiconductort VHF/UHF Transistor MPSH10 NPN Silicon ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Total Device Dissipation @ TA = 25°C
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MPSH10
226AA)
r14525
MPSH10/D
MPSH10
MPSH10 H parameters
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TRANSISTOR C 3223
Abstract: MPSH10 MMBTH10 Spice Model NPN power transistor spice MMBTH10
Text: N MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
OT-23
MPSH10
TRANSISTOR C 3223
MMBTH10 Spice Model
NPN power transistor spice
MMBTH10
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MPSH10G
Abstract: MPSH10 MPSH10RLRA MPSH10RLRAG MPSH10RLRP MPSH10RLRPG mps h10
Text: MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage
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MPSH10
MPSH10/D
MPSH10G
MPSH10
MPSH10RLRA
MPSH10RLRAG
MPSH10RLRP
MPSH10RLRPG
mps h10
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Untitled
Abstract: No abstract text available
Text: MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage
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MPSH10
125ale
MPSH10/D
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MPSH10 H parameters
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF T RAN SI ST OR ̈ DESCRI PT I ON The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ̈ ORDERI N G I N FORM AT I ON Ordering Number
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MPSH10
MPSH10
MPSH10-x-T92-B
MPSH10L-x-T92-B
MPSH10G-x-T92-B
MPSH10-x-T92-K
MPSH10L-x-T92-K
MPSH10G-x-T92-K
QW-R201-022
MPSH10 H parameters
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MPSA10
Abstract: MPSH10 mps h10
Text: MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage
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MPSH10
MPSH10/D
MPSA10
MPSH10
mps h10
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MPSH10 S parameters
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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QSC/L-000019
MPSH10
C-120
MPSH10Rev170602E
MPSH10 S parameters
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MPSH10
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION
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MPSH10
C-120
MPSH10Rev170602E
MPSH10
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION
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MPSH10
C-120
MPSH10Rev170602E
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MPSH10 fairchild transistor
Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
MPSH10
OT-23
MPSH10 fairchild transistor
MMBTH10 Spice Model
transistor top mark 3E L
transistor bel 100
CBVK741B019
F63TNR
MMBTH10
PN2222N
TRANSISTOR C 3223
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CBVK741B019
Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
MPSH10
OT-23
CBVK741B019
F63TNR
MMBTH10
PN2222N
PAP transistor power high frequency
transistor bel 100
rf transistor mark code H1
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MPSH10 s parameters
Abstract: No abstract text available
Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
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MPSH10
MMBTH10
MPSH10
OT-23
MPSH10 s parameters
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distress beacon
Abstract: dn-101 transistor ztx zetex transistors TO92 285T distress ZTX688B DIAC application MPSH10 S parameters
Text: Design Note 9 Issue 2 June 1995 Automotive Security Systems and RF Transistor Products Design Note 10 Issue 2 June 1995 3V Distress Beacon + 12V Antenna 680 1M + 3V Encoder I.C. 15T The majority of modem automotive alarms employ coded RF systems that key a VHF carrier wave with a unique or
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1M/120k)
DN10-1
distress beacon
dn-101
transistor ztx
zetex transistors TO92
285T
distress
ZTX688B
DIAC application
MPSH10 S parameters
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MPS-H10 equivalent
Abstract: mpsh10 equivalent MPS-H10
Text: The RO TO39-3 Series of One-Port SAW Resonators Electrical Connections Equivalent LC Model This one-port, two-terminal SAW resonator is bidirectional. The terminals are interchangeable with the exception of circuit board layout. The following equivalent LC model is valid near resonance:
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O39-3
MPS-H10 equivalent
mpsh10 equivalent
MPS-H10
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Untitled
Abstract: No abstract text available
Text: RO2100 • • • • • Ideal for 295 MHz Oscillators Low Series Resistance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case Complies with Directive 2002/95/EC RoHS 295.05 MHz SAW Resonator Pb The RO2100 is a true one-port, surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It
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RO2100
2002/95/EC
RO2100
O39-3
MPS-H10
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MPS-H10
Abstract: MPS-H10 equivalent
Text: RO2100 • • • • • Ideal for 295 MHz Oscillators Low Series Resistance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case Complies with Directive 2002/95/EC RoHS 295.05 MHz SAW Resonator Pb The RO2100 is a true one-port, surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It
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RO2100
2002/95/EC
RO2100
O39-3
MPS-H10
MPS-H10
MPS-H10 equivalent
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E D MPSH10/11 Hi ?*Jb414H 000^072 4 E3SÎ1GK NPN EPITAXIAL SILICO N TRANSISTO R VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta= 2 5 ° C )
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OCR Scan
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MPSH10/11
Jb414H
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pulse h1251
Abstract: H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters
Text: MPSH10 I MMBTH10 & D iscrete P O W E R & S ig n a l T echnologies National S e m i c o n d u c t o r " MPSH10 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common
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OCR Scan
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MPSH10
MMBTH10
1000pF
bSD113D
pulse h1251
H1251
MMBTH10
MPSH10
TRANSISTOR C 3223
MPS-H10 national
MPSH10 s parameters
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transistor polar
Abstract: mpsh
Text: MPSH10/11 NPN EPITAXIAL SILICON TRANSISTOR VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta= 2 5 °C ) Derate above 2 5 “ C Collector Dissipation (Tc= 2 5 °C )
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OCR Scan
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MPSH10/11
transistor polar
mpsh
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