mpsa63 replace
Abstract: BC237 MPSA63 equivalent J111
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit
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MPSA62
MPSA63
MPSA64
MPSA55,
MPSA56
MPSA05,
MPSA06
MPSA62
mpsa63 replace
BC237
MPSA63 equivalent
J111
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MPSA63
Abstract: MPSA05 MPSA06 MPSA55 MPSA56 MPSA62 MPSA64
Text: MOTOROLA Order this document by MPSA62/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 thru MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS
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MPSA62/D
MPSA62
MPSA64
MPSA55,
MPSA56
MPSA05,
MPSA06
MPSA63
MPSA63
MPSA05
MPSA55
MPSA56
MPSA62
MPSA64
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MPSA64
Abstract: MPSA63 MPSA05 MPSA06 MPSA55 MPSA56 MPSA62
Text: MOTOROLA Order this document by MPSA62/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 thru MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS
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MPSA62/D
MPSA62
MPSA64
MPSA55,
MPSA56
MPSA05,
MPSA06
MPSA63
MPSA64
MPSA63
MPSA05
MPSA55
MPSA56
MPSA62
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MPSa56 equivalent
Abstract: MPSa05 equivalent MPSa06 equivalent BC237 bc547 npn Mpsa92/MPSa56 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Symbol MPSA05 MPSA55 MPSA06
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MPSA05
MPSA06*
MPSA55
MPSA56*
MPSA06
MPSA56
Ch218A
MSC1621T1
MPSa56 equivalent
MPSa05 equivalent
MPSa06 equivalent
BC237
bc547 npn
Mpsa92/MPSa56 equivalent
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MPSA05
Abstract: MPSA55 MPSA56 AN469 MPSA06 10STC
Text: MOTOROLA Order this document by MPSA05/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS
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MPSA05/D
MPSA05
MPSA06*
MPSA55
MPSA56*
MPSA06
MPSA56
MPSA05/D*
MPSA05
MPSA55
MPSA56
AN469
MPSA06
10STC
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motorola 1N4148
Abstract: dc motor speed control using scr nand gate ic 40 MPM3017 AN1319-D DEVB151 dc motor speed control using scr nand gate ic 500 watt half bridge schematic motor controls 48volt MC34151 200 Amp bridge mosfet
Text: Order this document by AN1319/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE Design Considerations for a Low Voltage NĆChannel HĆBridge Motor Drive AN1319 Prepared by: Wayne Chavez Discrete Applications Engineering INTRODUCTION In low voltage motor drives, it is common practice to use
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AN1319/D
AN1319
AN1319/D*
motorola 1N4148
dc motor speed control using scr nand gate ic 40
MPM3017
AN1319-D
DEVB151
dc motor speed control using scr nand gate ic
500 watt half bridge schematic
motor controls 48volt
MC34151
200 Amp bridge mosfet
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2S321
Abstract: 2SB646 2N5111 2n3063 ZTX50 LOW-POWER SILICON PNP 475 50K ROHM 2N1654 2N5857
Text: LOW-POWER SILICON PNP Item Number Part Number NB223XJ NB223YJ BC556P BC856BR BC856BR BC856BR BC856CR V BR CEO 10 15 20 - 25 2SB1234 2SB1235 2Nl196 2Nl197 BCY93 BCY94 ZTX504 BCY95 ZT189 BC311 ~~~~~~3 2SAll14 BCY22 BFX41 2N1922 2SAl158Y 2N1275 2N5111 BFR60 ~~J;~2B
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NB223XJ
NB223YJ
BC556P
BC856BR
BC856CR
O-236
2S321
2SB646
2N5111
2n3063
ZTX50
LOW-POWER SILICON PNP
475 50K ROHM
2N1654
2N5857
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MJE340 MOTOROLA
Abstract: mjl21194 MOC223-M MCR265-006 MC79L12ACP MC79L05ACP mj15003 mje172 analog irf 846 mcr100-6 307
Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor
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MC78T05CT
MJD112
MMBT4401
MOC30ALT1
MOC205-M
MPSW01A
MJ16012
MMBT2907A
MOC207-M
MPSW06
MJE340 MOTOROLA
mjl21194
MOC223-M
MCR265-006
MC79L12ACP
MC79L05ACP
mj15003
mje172 analog
irf 846
mcr100-6 307
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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MP5A05
Abstract: mpsa55 MPSA55 motorola J5001 MPSA05 motorola mpsa56 Motorola mpsa06 MPSA05
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors NPN NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* PNP EMITTER EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Symbol MPSA05 MPSA55 MPSA06 MPSA56 Unit Collector- Emitter Voltage
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OCR Scan
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PDF
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MPSA05
MPSA06*
MPSA55
MPSA56*
MPSA06
MPSA56
MPSA55/56
AN469)
MP5A05
MPSA55 motorola
J5001
MPSA05 motorola
mpsa56 Motorola
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MPSA63
Abstract: MPSA05 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64* PNP Silicon COLLECTOR 3 MPSA55, MPSA56 For Specifications, See MPSA05, MPSAÓ6 Data “ Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol Rating MPSA62 MPSA63 MPSA64
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OCR Scan
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PDF
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MPSA62
MPSA63
MPSA64*
MPSA55,
MPSA56
MPSA05,
MPSA64
-5K-10K
MPSA05 motorola
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MPSA05
Abstract: MPS-A05 mpsa0 MPSA56
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors COLLECTOR 3 NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* COLLECTOR 3 2 BASE BASE NPN PNP 1 1 EMITTER EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Symbol MPSA05 MPSA55 C o llector-E m itter Voltage
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OCR Scan
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PDF
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MPSA05
MPSA06*
MPSA55
MPSA56*
MPSA55
MPSA06
MPSA56
MPS-A05
mpsa0
MPSA56
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mpsa06
Abstract: mpsa56 MPS-A06 MPSA05 motorola MPS-A56 MPSA06/Q2N3053
Text: M AXIM U M RATINGS Rating Symbol MPSA05 MPSA06 MPSA55 MPSA56 Unit Collector-Emitter Voltage v CEO 60 80 Vdc Collector-Base Voltage v CBO 60 80 Vdc Emitter-Base Voltage v EBO Collector Current — Continuous 4.0 Vdc 'c 500 m Adc Total Device Dissipation @ T/\ = 25°C
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OCR Scan
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PDF
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MPSA05
MPSA06
MPSA55
MPSA56
MPSA06*
MPSA56*
O-226AA)
MPS-A06
MPSA05 motorola
MPS-A56
MPSA06/Q2N3053
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mpsa64
Abstract: MPSA63 MPSA75 MPS-A62
Text: MPSA55, MPSA56 For Specifications, MPSA62 See M PSA 05, M PSA 06 Data thru MAXIMUM RATINGS Symbol MPSA62 MPSA63 M PSA64 Unit Collector-Emitter Voltage VC ES -2 0 -3 0 Vdc Collector-Base Voltage v CBO -2 0 Emitter-Base Voltage v EBO Rating -3 0 - 10 Vdc Vdc
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OCR Scan
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PDF
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MPSA55,
MPSA56
MPSA62
MPSA62
MPSA63
PSA64
MPSA64*
O-226AA)
MPSA63,
mpsa64
MPSA75
MPS-A62
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MPSA63
Abstract: MPSA64 MPSA05 MPSA06 MPSA55 MPSA56 MPSA62 MPSA75 MPS-A63 MPS-A62
Text: MPSA55, MPSA56 1 For Specifications, See MPSA05, MPSA06 Data thru M A XIM U M RATINGS Rating Sym bol Collector-Emitter Voltage M PSA62 M PSA63 M PSA 6 4 Unit VC ES -2 0 -3 0 Vdc Collector-Base Voltage VCBO -2 0 -3 0 Vdc Emitter-Base Voltage vebo - 10 Vdc ic
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OCR Scan
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PDF
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MPSA55,
MPSA56
MPSA05,
MPSA06
MPSA62
MPSA63
MPSA64
MPSA62
MPSA64*
MPSA05
MPSA55
MPSA56
MPSA75
MPS-A63
MPS-A62
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MPSA63
Abstract: mpsa64 MPS-A64 MPS-A62 MPSA62 mps-a63 HMPSA63
Text: MPSA55, MPSA56 For Specifications. See M PSA 05, M PSA06 Data MPSA62 thru MAXIM UM RATINGS Rating Symbol MPSA62 MPSA63 MPSA64 C o lle ctor-E m itter Voltage V CES -2 0 -3 0 Vdc Coilector-Base Voltage VCBO -2 0 - 30 Vdc Em itter-Base Voltage v EBO - 10 CASE 29-04, STYLE 1
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OCR Scan
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PDF
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MPSA55,
MPSA56
PSA06
MPSA62
MPSA62
MPSA63
MPSA64
MPSA64*
O-226AA)
MPS-A64
MPS-A62
mps-a63
HMPSA63
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2N4354
Abstract: 2N3495 MM4000
Text: MOTOROLA'SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 DEjt,3L?aSS D IODES/OPTO 34C G03ÛD1E T 38012 D SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) die no. MPSAC55 — PNP LINE SOU RCE — DMB158 This die provides performance similar to that of the following device types:
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OCR Scan
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MPSAC55
DMB158
2N34t4
2N3495
2N34M
2N34S7
2N4354*
2N435C*
MM4000
MPS4354
2N4354
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MPSA18 BC550
Abstract: BC459C bc459 BC414 MOTOROLA BC650C 2N4125 EBC bc550 bc560 BC651C BC337/BC327 N5089
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued Low Noise and Good H p £ Linearity These devices are designed to use on applications where good H p ^ linearity and low noise characteristics are required Instrumentation, Hi-Fi Preamplifier. Hfe@ (Volts) Amb.
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OCR Scan
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BC239
BC309
BC413
BC415
BC414
BC416
BC549
BC559
BC549B
MPSA18 BC550
BC459C
bc459
BC414 MOTOROLA
BC650C
2N4125 EBC
bc550 bc560
BC651C
BC337/BC327
N5089
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