Untitled
Abstract: No abstract text available
Text: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)
|
Original
|
2SK2980
REJ03G1061-0400
ADE-208-571B)
PLSP0003ZB-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC2620 Silicon NPN Epitaxial Planar REJ03G0704-0200 Previous ADE-208-1071 Rev.2.00 Aug.10.2005 Application VHF amplifier, Local oscillator Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings
|
Original
|
2SC2620
REJ03G0704-0200
ADE-208-1071)
PLSP0003ZB-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HRW0702A Silicon Schottky Barrier Diode for Rectifying REJ03G0159-0600Z Previous: ADE-208-109E Rev.6.00 Jan.06.2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
HRW0702A
REJ03G0159-0600Z
ADE-208-109E)
|
PDF
|
marking s17
Abstract: S17 SMD Diode S17 HRW0202A "marking s17" marking TH_
Text: Diodes SMD Type Silicon Schottky Barrier Diode HRW0202A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 high effifiency rectifying. 0.55 Low forward voltage drop and suitable for +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 MPAK package is suittable for high density
|
Original
|
HRW0202A
OT-23
marking s17
S17 SMD
Diode S17
HRW0202A
"marking s17"
marking TH_
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification HRW0702A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 high effifiency rectifying. 0.55 Low forward voltage drop and suitable for +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 MPAK package is suittable for high density
|
Original
|
HRW0702A
OT-23
|
PDF
|
ADE-208-742
Abstract: 2SK3287 DSA003643
Text: 2SK3287 Silicon N Channel MOS FET High Speed Switching ADE-208-742 C Z 4th.Edition. June 1999 Features • Low on-resistance R DS = 1.26 typ. (VGS = 10 V , ID = 150 mA) R DS = 2.8 typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. • Small package (MPAK)
|
Original
|
2SK3287
ADE-208-742
2SK3287
DSA003643
|
PDF
|
VEBO-15V
Abstract: 2SC4366 DSA003637
Text: 2SC4366 Silicon NPN Epitaxial ADE-208-1104A Z 2nd. Edition Mar. 2001 Application Low Frequency amplifier Outline MPAK 3 1 2 Note: Marking is “ZI–”. 1. Emitter 2. Base 3. Collector 2SC4366 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit
|
Original
|
2SC4366
ADE-208-1104A
VEBO-15V
2SC4366
DSA003637
|
PDF
|
2SJ575
Abstract: Hitachi 2SJ DSA003643
Text: 2SJ575 Silicon P Channel MOS FET High Speed Switching ADE-208-740B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (MPAK)
|
Original
|
2SJ575
ADE-208-740B
2SJ575
Hitachi 2SJ
DSA003643
|
PDF
|
2SC3867
Abstract: DSA003646
Text: 2SC3867 Silicon NPN Epitaxial Application • UHF frequency converter • Wide band amplifier Outline MPAK 3 1 2 1. Base 2. Emitter 3. Collector 2SC3867 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage
|
Original
|
2SC3867
2SC3867
DSA003646
|
PDF
|
ADE-208-593A
Abstract: diode 62z DSA003643
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593A Z Rev.1 Nov. 2001 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
ADE-208-593A
D-85622
D-85619
ADE-208-593A
diode 62z
DSA003643
|
PDF
|
hitachi S17
Abstract: HRW0202A SC-59A DSA003641
Text: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev. 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
HRW0202A
ADE-208-209E
hitachi S17
HRW0202A
SC-59A
DSA003641
|
PDF
|
2SC2732
Abstract: DSA003637 hitachi ic
Text: 2SC2732 Silicon NPN Epitaxial ADE-208-1072 Z 1st. Edition Mar. 2001 Application UHF frequency converter Outline MPAK 3 1 2 Note: Marking is “EC”. 1. Emitter 2. Base 3. Collector 2SC2732 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
|
Original
|
2SC2732
ADE-208-1072
2SC2732
DSA003637
hitachi ic
|
PDF
|
2SC4680
Abstract: DSA003637
Text: 2SC4680 Silicon NPN Epitaxial ADE-208-1118A Z 2nd. Edition Mar. 2001 Application VHF / UHF high frequency switching Features • Low Ron and high performance for RF switch. • Capable of high density mounting. Outline MPAK 3 1 2 Note: Marking is “XU–”.
|
Original
|
2SC4680
ADE-208-1118A
2SC4680
DSA003637
|
PDF
|
zener diode B3
Abstract: zener diode B2 diode b3 zener diode 3.0 b2 Zener Diode B1 9 diode zener b2 diode b3 zener Zener Diode B1 2 HZM36NBTL zener 431
Text: HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer ADE-208-130C Z Rev. 3 Features _ Wide spectrum from 1.9V through 38V of zener voltage provide flexible application. _ MPAK Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
ADE-208-130C
zener diode B3
zener diode B2
diode b3
zener diode 3.0 b2
Zener Diode B1 9
diode zener b2
diode b3 zener
Zener Diode B1 2
HZM36NBTL
zener 431
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: HSM276SR Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-040D Z Rev. 4 Aug. 1994 Features • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
HSM276SR
ADE-208-040D
HSM276SR
200pF,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HSM113WK Silicon Schottky Barrier Diode for Battery Switch HITACHI ADE-208-025B Z Rev. 2 Features • The HSM113WK has two different (VF-IF) chips, and can change the main battery to the backup battery automatically. • MPAK package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
HSM113WK
ADE-208-025B
HSM113WK
200mA
100mA
200pF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HSM2694 Silicon Epitaxial Planar Diode for Tuner Band Switch HITACHI ADE-208-095A Z Preliminary Rev. 1 Jun. 1993 Features • Low forward resistance. (rf = 0.9i2max) • Low capacitance. (C = 1.2pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
HSM2694
ADE-208-095A
100MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SA1052 > v □ > p n p x \ ¿ $ > * • > 7 M í HITACHI MPAK 1. Emitter 2. Base 3. Collector Ta = 25°C im 2SA1052 3 1 / ^ ' ^ -X E ^C B O -30 V 3 1 / ^ í1 • i £ y ^ H E E VcEO -30 V x ia -5 V le -100 mA lE 100 mA Pe 150 mW Tj Tstg 150 °C —55~+150
|
OCR Scan
|
2SA1052
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HZM27FA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-443A Z R ev 1 Features • HZM27FA has four devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
HZM27FA
ADE-208-443A
HZM27FA
150pF,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HVM17 Variable Capacitance Diode for FM tuner HITACHI ADE-208-087B Z Preliminary Rev. 2 May. 1993 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
HVM17
ADE-208-087B
50min)
10MHz
200pF,
10OnA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HSM83 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-091D Z Rev 4 Features • High reverse voltage. (VR= 250V) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.
|
OCR Scan
|
HSM83
ADE-208-091D
10msec.
SC-59A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HSM88WK Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-049F Z Rev 6 Jul1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.
|
OCR Scan
|
HSM88WK
ADE-208-049F
Jul1998
HSM88W
400nA
SC-59A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HRW0503A Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-016B Z Rev. 2 Sep. 1994 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
HRW0503A
ADE-208-016B
10msec
|
PDF
|
idt8m864
Abstract: IDT7m864 7m864 IDT6116 8M864 idt6116s
Text: IDT7M864 IDT8M864 6 4 K 8K X 8 C M O S STATIC RA MPAK 64K RAM PAK FEATURES: • Equivalent to JEDEC standard 8K x 8 monolithic RAM • 8,192 x 8 CMOS static RAM module complete w ith decoder and decoupling capacitor _ • High-speed 65 (commercial only) 75/85/120/150/200ns
|
OCR Scan
|
IDT7M864
IDT8M864
75/85/120/150/200ns
IDT6116S
Ta-25
idt8m864
7m864
IDT6116
8M864
idt6116s
|
PDF
|
