MOTOROLA TRANSISTOR P1D Search Results

MOTOROLA TRANSISTOR P1D Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MOTOROLA TRANSISTOR P1D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PZTA42T1 Abstract: SMD310 marking P1D pd 223 circuit Text: MOTOROLA Order this document by PZTA42T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3	Original	PDF	PZTA42T1/D PZTA42T1 PZTA42T1/D* PZTA42T1 SMD310 marking P1D pd 223 circuit
BC237 Abstract: BC238B MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value	Original	PDF	PZTA42T1 318E-04, O-261AA MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 BC238B MOTOROLA
PZTA42T1 Abstract: SMD310 Text: MOTOROLA Order this document by PZTA42T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3	Original	PDF	PZTA42T1/D PZTA42T1 PZTA42T1 SMD310
Motorola 581 Abstract: SF-11N MRF959 MRF959T1 Text: MOTOROLA Order this document by MRF959T1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF959T1 NPN Silicon Low Noise Transistors Motorola’s MRF959 is a high performance silicon NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF959 is well suited	Original	PDF	MRF959T1/D MRF959T1 MRF959 Motorola 581 SF-11N MRF959T1
MRF579 Abstract: Motorola 581 RF NPN POWER TRANSISTOR C 10-12 GHZ Transistor motorola 418 RF NPN POWER TRANSISTOR 2.5 GHZ MRF579T1 motorola package markings Text: MOTOROLA Order this document by MRF579T1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF579T1 NPN Silicon Low Noise Transistors Motorola’s MRF579 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF579 is well suited for low	Original	PDF	MRF579T1/D MRF579T1 MRF579 Motorola 581 RF NPN POWER TRANSISTOR C 10-12 GHZ Transistor motorola 418 RF NPN POWER TRANSISTOR 2.5 GHZ MRF579T1 motorola package markings
371 ph Abstract: motorola 2198 MRF949 RF NPN POWER TRANSISTOR C 10-12 GHZ 1 307 329 082 552 transistor motorola microlab fc 730 transistor motorola 351 MRF949T1 FXR SF-31N Text: MOTOROLA Order this document by MRF949T1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF949T1 NPN Silicon Low Noise Transistors Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low	Original	PDF	MRF949T1/D MRF949T1 MRF949 371 ph motorola 2198 RF NPN POWER TRANSISTOR C 10-12 GHZ 1 307 329 082 552 transistor motorola microlab fc 730 transistor motorola 351 MRF949T1 FXR SF-31N
MJE 340 transistor Abstract: 3140e Text: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and	Original	PDF	MRF1047T1/D MRF1047T1 MRF1047T1/D MJE 340 transistor 3140e
200E Abstract: MRF1047 MRF1047T1 Text: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and	Original	PDF	MRF1047T1/D MRF1047T1 MRF1047T1 200E MRF1047
731 MOSFET Abstract: 53368 A113 A114 A115 AN1955 ML200C MMG3002NT1 MMG30XX Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier Freescale Semiconductor, Inc.	Original	PDF	MMG3002NT1/D MMG3002NT1 MMG3002NT1 731 MOSFET 53368 A113 A114 A115 AN1955 ML200C MMG30XX
MRF1057T1 Abstract: AN1675 RK73H2A MDC5001 MRF1027T1 MRF1047T1 2.5 ghz lna transistor motorola rf spice 0/MRF1057 Text: Order this document by AN1675/D AN1675 A Low Noise Amplifier with High IP3 for the 900 MHz Band Using the MRF1057T1 Low Noise Transistor Prepared by Raul Pineiro INTRODUCTION This Application Note describes the performance of the Motorola MRF1057T1 low noise bipolar transistor in a LNA	Original	PDF	AN1675/D AN1675 MRF1057T1 MRF1027T1 MRF1047T1 AN1675 RK73H2A MDC5001 2.5 ghz lna transistor motorola rf spice 0/MRF1057
4066 spice model Abstract: SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900 Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ	Original	PDF	MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 4066 spice model SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900
318M Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ	Original	PDF	MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 318M LL1608-FH MBC13900T1 marking r4 SOT343 SOT343 lna
capacitor 106 35K Abstract: 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET	Original	PDF	MRF21120/D MRF21120R6 capacitor 106 35K 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K
200B Abstract: MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P20180R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET	Original	PDF	MRF5P20180/D MRF5P20180R6 200B MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA

MRF5P21180 Abstract: CDR33BX104AKWS MRF5P21180R6 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET	Original	PDF	MRF5P21180/D MRF5P21180R6 MRF5P21180 CDR33BX104AKWS MRF5P21180R6
MOSFET 1300 F2 Abstract: 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF19125R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET	Original	PDF	MRF19125/D MRF19125R3 MOSFET 1300 F2 465B AN1955 CDR33BX104AKWS MRF19125 MRF19125R3 3052 mosfet
transistor rf m 1104 Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET	Original	PDF	MRF5P21240/D MRF5P21240R6 transistor rf m 1104 TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET	Original	PDF	MRF9045MR1 RDMRF9045MR1
014728 Abstract: pcb 85501 MMG3001NT1 Text: MOTOROLA Order this document by MMG3001NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3001NT1 Broadband High Linearity Amplifier The MMG3001NT1 is a General Purpose Amplifier that is internally	Original	PDF	MMG3001NT1/D MMG3001NT1 MMG3001NT1 MMG3001NT1/D 014728 pcb 85501
M 57733 Abstract: No abstract text available Text: MOTOROLA Order this document by MMG3002NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier The MMG3002NT1 is a General Purpose Amplifier that is internally	Original	PDF	MMG3002NT1/D MMG3002NT1 MMG3002NT1 MMG3002NT1/D M 57733
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally	Original	PDF	MMG3003NT1/D MMG3003NT1 MMG3003NT1 MMG3003NT1/D
ATC 1184 Abstract: A113 MRFG35005MT1 tc 106-10 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies	Original	PDF	MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 tc 106-10
42t1 Abstract: No abstract text available Text: MOTOROLA Order this document by PZTA42T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS	OCR Scan	PDF	PZTA42T1/D PZTA42T1 OT-223 42t1
SOT223 Package Abstract: MARKING npn TRANSISTOR 1k sot223 MOTOROLA TRANSISTOR P1D Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value U nit Collector-Emitter Voltage Open Base	OCR Scan	PDF	PZTA42T1 OT-223 318E-04, O-261AA PZTA64T1 SOT223 Package MARKING npn TRANSISTOR 1k sot223 MOTOROLA TRANSISTOR P1D

MOTOROLA TRANSISTOR P1D Search Results

MOTOROLA TRANSISTOR P1D Result Highlights (5)

MOTOROLA TRANSISTOR P1D Datasheets Context Search

PZTA42T1

BC237

PZTA42T1

Motorola 581

MRF579

371 ph

MJE 340 transistor

200E

731 MOSFET

MRF1057T1

4066 spice model

318M

capacitor 106 35K

200B

MRF5P21180

MOSFET 1300 F2

transistor rf m 1104

Untitled

014728

M 57733

Untitled

ATC 1184

42t1

SOT223 Package