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    MOTOROLA T3 SWITCH Search Results

    MOTOROLA T3 SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    AS839 Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc
    AS8397- Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc

    MOTOROLA T3 SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBR901LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D MMBR901LT1, MMBR901LT1/D MMBR901LT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D MMBR901LT1,

    11608A

    Abstract: MMBR901LT1 Microlab FXR 7A SF marking 8b sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ SF-11N RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ sf 118 d
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D MMBR901LT1, MRF9011LT1 MRF9011LT1) 11608A MMBR901LT1 Microlab FXR 7A SF marking 8b sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ SF-11N RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ sf 118 d

    mps901

    Abstract: MRF901
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D MMBR901LT1, MPS901 MRF901 MRF9011LT1 MRF9011LT1) MRF901

    MMBR901L

    Abstract: motorola t3 switch RF NPN POWER TRANSISTOR 2.5 GHZ MMBR901LT1 RF TRANSISTOR 1 WATT
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D MMBR901LT1, MMBR901L motorola t3 switch RF NPN POWER TRANSISTOR 2.5 GHZ MMBR901LT1 RF TRANSISTOR 1 WATT

    CP12

    Abstract: MPC750 RFC2684 ICMP messages
    Text: Frame Relay to ATM to 10/100 Ethernet Switch Router Application Guide C-WARE SOFTWARE TOOLSET, VERSION 2.4 CSTAFRAE-UG/D Rev 00 Copyright 2004 Motorola, Inc. All rights reserved. No part of this documentation may be reproduced in any form or by any means or used to make any derivative work such as


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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Epitaxial Transistor BSP19AT1 Motorola Preferred Device This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223


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    PDF OT-223 inch/1000

    MJE5732

    Abstract: MJE171 MJE5730 MJE5731 MJE5731A TIP47 TIP50
    Text: MOTOROLA Order this document by MJE5730/D SEMICONDUCTOR TECHNICAL DATA MJE5730 MJE5731 MJE5731A High Voltage PNP Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.


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    PDF MJE5730/D* MJE5730/D MJE5732 MJE171 MJE5730 MJE5731 MJE5731A TIP47 TIP50

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Small-Signal Darlington Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is


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    PDF OT-223 BSP62T1 inch/1000 BSP62T3 inch/4000 BSP52T1 BSP62T1

    transistor code AS3

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Small-Signal Darlington Transistor BSP52T1 Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is


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    PDF OT-223 BSP52T1 inch/1000 BSP52T3 inch/4000 BSP62T1 BSP52T1 transistor code AS3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier/Switch Transistor MMPQ3904 NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 40 Vdc Collector – Base Voltage


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    PDF MMPQ3904

    BD241B

    Abstract: NT 407 F TRANSISTOR BD241C BD242B BD242C NT 407 F power transistor
    Text: MOTOROLA Order this document by BD241B/D SEMICONDUCTOR TECHNICAL DATA NPN BD241B BD241C* PNP BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage —


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    PDF BD241B/D* BD241B/D BD241B NT 407 F TRANSISTOR BD241C BD242B BD242C NT 407 F power transistor

    MTP50N05

    Abstract: l0134 CU904 CASE221D-02
    Text: MOTOROLA SC XSTRS/R 4bE F b3b7aS4 D 0 Ü T3 5 MS 7 IMOTb Order this data sheet by MTA30N05EUD MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTA30N05EL Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate


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    PDF MTA30N05EUD MTA30N05EL CU904 MTP50N05 l0134 CU904 CASE221D-02

    mmbr901lt1

    Abstract: 75 watt npn switching transistor MARKING 7A sot-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon H igh-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF OT-23 MMBR901LT1, mmbr901lt1 75 watt npn switching transistor MARKING 7A sot-23

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1,T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1/D OT-23 MMBR901LT1

    itt 2222a

    Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
    Text: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min


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    PDF PZT2222A PZT2907A PZTA14 BSP52 ZTA14 PZTA64 ZTA64 PTZA42 TZA42 itt 2222a itt 2907A motorola diode cross reference PTZA92 2222a pinout 2907A bs33 zta96

    MPS901

    Abstract: TDB O 117 SP BR901 MMBR901LT1 RF901 MMBR901
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor Designed prim arily for use in high-gain, low -noise s m all-signal am plifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.


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    PDF MRF9011LT1) MMBR901 MMBR901LT1, MRF901 MPS901 MRF9011LT1 TDB O 117 SP BR901 MMBR901LT1 RF901

    MMBTH24L

    Abstract: MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL
    Text: MOT OROL A SC XSTRS/R F 4bE D • b3b72SiJ OO^bSGB ? ■ MOTb 'T ^ - O j SOT-23 TRANSISTORS (continued) S w itch in g T ran sisto rs Pinout: 1-Base, 2-Emitter, 3-Collector Devices are listed in order of descending f f . Switching Time (ns) Device hre Marking


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    PDF b3b72SiJ OT-23 MMBT2369L BSV52L MMBT2222L MMBT2222AI. MMBT3904T MMBT3638 MBT3640L MBT4403L MMBTH24L MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL

    MPS901

    Abstract: ic hp 2212 mrf901 MMBR901 LB 122 transistor To-92 TRANSISTOR SF 128 182112 transistor MARKING H3B MMBR901LT1 MRF9011LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilic o n H ig h -F re q u e n c y T ra n sis to r Designed primarily for use in higb-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MRF9011LT1) MMBR901LT1, OT-23 OT-143 MRF901 MPS901 ic hp 2212 MMBR901 LB 122 transistor To-92 TRANSISTOR SF 128 182112 transistor MARKING H3B MMBR901LT1 MRF9011LT1

    MOTOROLA DATE CODE MARKING

    Abstract: sot-223 code marking
    Text: Section 2 Plastic-Encapsulated Transistors In B r i e f . . . Motorola’s plastic transistors and diodes encompass h u n d re d s of d e v ic e s s p a n n in g th e g a m u t fro m general-purpose amplifiers and switches with a wide variety of characteristics to dedicated special-purpose devices for


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    PDF OT-23, SC-59, SC-70/SOT-323, -90/S OT-223, SO-16 SC-90/SOT-416 MOTOROLA DATE CODE MARKING sot-223 code marking

    te dkl

    Abstract: mj16018 TF DKL 100-C MJW16018 Motorola Bipolar Power Transistor Device Data JW16018
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16018* M JW 16018* Designer’s Data Sheet NPN Silicon Power Transistors ’•Motorola Pröfarred Device 1.5 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall tim e Is critica l. They are particularly suited for


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    PDF MJ16018 MJW16018 te dkl TF DKL 100-C MJW16018 Motorola Bipolar Power Transistor Device Data JW16018

    1N6095

    Abstract: No abstract text available
    Text: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:


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    PDF 1N6095 1N6096

    murd310

    Abstract: MURD305 smc diodes motorola
    Text: MOTOROLA SC Í D I O D E S / O P T O } 1EE D I b3ti725S 0 0 7 ^ 0 0 1 T | „ 1-03-15* MOTOROLA • I SEMICONDUCTOR TECHNICAL DATA S w itc h m o d e P o w er R ectifiers DPAK Surface M ount Package . . . designed fo r use in switching power supplies, inverters and as free wheeling diodes,


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    PDF b3ti725S MURD305 MURD310 MURD315 MURD320 00/line-line. smc diodes motorola

    package marking sot 223

    Abstract: marking 7d sot-323 sot markings marking CODE box SOT23
    Text: Section 5 Small-Signal Tuning and Switching Diodes In Brief. . . Packaging options include plastic DIPs and surface mount packages. Most SO T-23, SC-59, S C -70/S O T -323 and SOT-223 package devices are only available in Tape and Reel. NOTE: All SOT-23 package devices have had a “T1” suffix


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    PDF SC-59, -70/S OT-223 OT-23 O-226AA) DO-204AA) O-226AC) OT-23 O-236AB) 318D-04 package marking sot 223 marking 7d sot-323 sot markings marking CODE box SOT23