MTP50N05
Abstract: l0134 CU904 CASE221D-02
Text: MOTOROLA SC XSTRS/R 4bE F b3b7aS4 D 0 Ü T3 5 MS 7 IMOTb Order this data sheet by MTA30N05EUD MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTA30N05EL Full Pak Isolated TMOS E-FET High Energy Power MOSFET N-Channel Enhancement-Mode Silicon Gate
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MTA30N05EUD
MTA30N05EL
CU904
MTP50N05
l0134
CU904
CASE221D-02
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mmbr901lt1
Abstract: 75 watt npn switching transistor MARKING 7A sot-23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon H igh-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching
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OT-23
MMBR901LT1,
mmbr901lt1
75 watt npn switching transistor
MARKING 7A sot-23
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MMBR901LT1
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MMBR901LT1, T3 MRF9011LT1 Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching
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MMBR901LT1,
MRF9011LT1
MRF9011LT1)
OT-23
OT-143
MRF9011LT1
MMBR901LT1
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MMBR901LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching
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MMBR901LT1/D
MMBR901LT1,
MMBR901LT1/D
MMBR901LT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1,T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching
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MMBR901LT1/D
OT-23
MMBR901LT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching
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MMBR901LT1/D
MMBR901LT1,
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11608A
Abstract: MMBR901LT1 Microlab FXR 7A SF marking 8b sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ SF-11N RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ sf 118 d
Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching
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MMBR901LT1/D
MMBR901LT1,
MRF9011LT1
MRF9011LT1)
11608A
MMBR901LT1
Microlab FXR
7A SF
marking 8b sot-23
RF NPN POWER TRANSISTOR C 10-12 GHZ
SF-11N
RF NPN POWER TRANSISTOR 2.5 GHZ
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
sf 118 d
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mps901
Abstract: MRF901
Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching
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MMBR901LT1/D
MMBR901LT1,
MPS901
MRF901
MRF9011LT1
MRF9011LT1)
MRF901
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MMBR901L
Abstract: motorola t3 switch RF NPN POWER TRANSISTOR 2.5 GHZ MMBR901LT1 RF TRANSISTOR 1 WATT
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching
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MMBR901LT1/D
MMBR901LT1,
MMBR901L
motorola t3 switch
RF NPN POWER TRANSISTOR 2.5 GHZ
MMBR901LT1
RF TRANSISTOR 1 WATT
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itt 2222a
Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
Text: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min
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PZT2222A
PZT2907A
PZTA14
BSP52
ZTA14
PZTA64
ZTA64
PTZA42
TZA42
itt 2222a
itt 2907A
motorola diode cross reference
PTZA92
2222a pinout
2907A
bs33
zta96
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MPS901
Abstract: TDB O 117 SP BR901 MMBR901LT1 RF901 MMBR901
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor Designed prim arily for use in high-gain, low -noise s m all-signal am plifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.
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MRF9011LT1)
MMBR901
MMBR901LT1,
MRF901
MPS901
MRF9011LT1
TDB O 117 SP
BR901
MMBR901LT1
RF901
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MMBTH24L
Abstract: MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL
Text: MOT OROL A SC XSTRS/R F 4bE D • b3b72SiJ OO^bSGB ? ■ MOTb 'T ^ - O j SOT-23 TRANSISTORS (continued) S w itch in g T ran sisto rs Pinout: 1-Base, 2-Emitter, 3-Collector Devices are listed in order of descending f f . Switching Time (ns) Device hre Marking
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b3b72SiJ
OT-23
MMBT2369L
BSV52L
MMBT2222L
MMBT2222AI.
MMBT3904T
MMBT3638
MBT3640L
MBT4403L
MMBTH24L
MMBT3960
sot-23 Marking KN
MMBTH81L
MLL34
MMBT3960L
SOT-23 MARKING D
sot-23 Marking 3D
MMBT3960AL
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MPS901
Abstract: ic hp 2212 mrf901 MMBR901 LB 122 transistor To-92 TRANSISTOR SF 128 182112 transistor MARKING H3B MMBR901LT1 MRF9011LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilic o n H ig h -F re q u e n c y T ra n sis to r Designed primarily for use in higb-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching
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MRF9011LT1)
MMBR901LT1,
OT-23
OT-143
MRF901
MPS901
ic hp 2212
MMBR901
LB 122 transistor To-92
TRANSISTOR SF 128
182112 transistor
MARKING H3B
MMBR901LT1
MRF9011LT1
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MOTOROLA DATE CODE MARKING
Abstract: sot-223 code marking
Text: Section 2 Plastic-Encapsulated Transistors In B r i e f . . . Motorola’s plastic transistors and diodes encompass h u n d re d s of d e v ic e s s p a n n in g th e g a m u t fro m general-purpose amplifiers and switches with a wide variety of characteristics to dedicated special-purpose devices for
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OT-23,
SC-59,
SC-70/SOT-323,
-90/S
OT-223,
SO-16
SC-90/SOT-416
MOTOROLA DATE CODE MARKING
sot-223 code marking
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te dkl
Abstract: mj16018 TF DKL 100-C MJW16018 Motorola Bipolar Power Transistor Device Data JW16018
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16018* M JW 16018* Designer’s Data Sheet NPN Silicon Power Transistors ’•Motorola Pröfarred Device 1.5 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall tim e Is critica l. They are particularly suited for
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MJ16018
MJW16018
te dkl
TF DKL
100-C
MJW16018
Motorola Bipolar Power Transistor Device Data
JW16018
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Epitaxial Transistor BSP19AT1 Motorola Preferred Device This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223
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OT-223
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1N6095
Abstract: No abstract text available
Text: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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1N6095
1N6096
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MJE5732
Abstract: MJE171 MJE5730 MJE5731 MJE5731A TIP47 TIP50
Text: MOTOROLA Order this document by MJE5730/D SEMICONDUCTOR TECHNICAL DATA MJE5730 MJE5731 MJE5731A High Voltage PNP Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.
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MJE5730/D*
MJE5730/D
MJE5732
MJE171
MJE5730
MJE5731
MJE5731A
TIP47
TIP50
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Small-Signal Darlington Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is
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OT-223
BSP62T1
inch/1000
BSP62T3
inch/4000
BSP52T1
BSP62T1
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transistor code AS3
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Small-Signal Darlington Transistor BSP52T1 Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is
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OT-223
BSP52T1
inch/1000
BSP52T3
inch/4000
BSP62T1
BSP52T1
transistor code AS3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier/Switch Transistor MMPQ3904 NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 40 Vdc Collector – Base Voltage
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MMPQ3904
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murd310
Abstract: MURD305 smc diodes motorola
Text: MOTOROLA SC Í D I O D E S / O P T O } 1EE D I b3ti725S 0 0 7 ^ 0 0 1 T | „ 1-03-15* MOTOROLA • I SEMICONDUCTOR TECHNICAL DATA S w itc h m o d e P o w er R ectifiers DPAK Surface M ount Package . . . designed fo r use in switching power supplies, inverters and as free wheeling diodes,
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b3ti725S
MURD305
MURD310
MURD315
MURD320
00/line-line.
smc diodes motorola
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BD241B
Abstract: NT 407 F TRANSISTOR BD241C BD242B BD242C NT 407 F power transistor
Text: MOTOROLA Order this document by BD241B/D SEMICONDUCTOR TECHNICAL DATA NPN BD241B BD241C* PNP BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage —
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BD241B/D*
BD241B/D
BD241B
NT 407 F TRANSISTOR
BD241C
BD242B
BD242C
NT 407 F power transistor
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package marking sot 223
Abstract: marking 7d sot-323 sot markings marking CODE box SOT23
Text: Section 5 Small-Signal Tuning and Switching Diodes In Brief. . . Packaging options include plastic DIPs and surface mount packages. Most SO T-23, SC-59, S C -70/S O T -323 and SOT-223 package devices are only available in Tape and Reel. NOTE: All SOT-23 package devices have had a “T1” suffix
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SC-59,
-70/S
OT-223
OT-23
O-226AA)
DO-204AA)
O-226AC)
OT-23
O-236AB)
318D-04
package marking sot 223
marking 7d sot-323
sot markings
marking CODE box SOT23
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