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    MOTOROLA SOT 23 PACKAGE MARKING Search Results

    MOTOROLA SOT 23 PACKAGE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA SOT 23 PACKAGE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AE sot-23

    Abstract: SOT-23 6F PO diode marking sot-23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 M6H MARKING sot23
    Text: MOTOROLA Order this document by MMBD352LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352LT1/D MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 236AB) AE sot-23 SOT-23 6F PO diode marking sot-23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 M6H MARKING sot23

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBV609LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum


    Original     		PDF MMBV609LT1/D MMBV609LT1 MMBV609LT1/D

    MMBV432

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBV432LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum


    Original     		PDF MMBV432LT1/D MMBV432LT1 MMBV432LT1/D MMBV432

    MMBTH81LT1

    Abstract: MMBTH81L 3D marking sot23 sot-23 Marking 3D 3D sot23 diodes
    Text: MOTOROLA Order this document by MMBTH81LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc


    Original     		PDF MMBTH81LT1/D MMBTH81LT1 236AB) MMBTH81LT1/D* MMBTH81LT1 MMBTH81L 3D marking sot23 sot-23 Marking 3D 3D sot23 diodes

    MMBFJ175LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max


    Original     		PDF MMBFJ175LT1/D MMBFJ175LT1 236AB) MMBFJ175LT1/D* MMBFJ175LT1

    BAS40LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAS40LT1/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAS40LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces


    Original     		PDF BAS40LT1/D BAS40LT1 236AB) BAS40LT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBV105GLT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical


    Original     		PDF MMBV105GLT1/D MMBV105GLT1 236AB) MMBV105GLT1/D

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC33464/D MC33464 Micropower Undervoltage Sensing Circuits The MC33464 series are micropower undervoltage sensing circuits that are specifically designed for use with battery powered microprocessor based systems, where extended battery life is required. A choice of several


    Original     		PDF MC33464/D MC33464 MC33464/D

    BAS70LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAS70LT1/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAS70LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces


    Original     		PDF BAS70LT1/D BAS70LT1 236AB) BAS70LT1

    BSS64LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BSS64LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistor BSS64LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage


    Original     		PDF BSS64LT1/D BSS64LT1 BSS64LT1/D* BSS64LT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBV105GLT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical


    Original     		PDF MMBV105GLT1/D MMBV105GLT1 236AB) MMBV105GLT1/D

    MC33464

    Abstract: a2cb motorola 4680 MC33464-D Voltage Detector SOT-89 marking MC33464 marking 121201 0k marking sot-89 1R SOT89
    Text: Order this document by MC33464/D MC33464 Micropower Undervoltage Sensing Circuits The MC33464 series are micropower undervoltage sensing circuits that are specifically designed for use with battery powered microprocessor based systems, where extended battery life is required. A choice of several


    Original     		PDF MC33464/D MC33464 MC33464 a2cb motorola 4680 MC33464-D Voltage Detector SOT-89 marking MC33464 marking 121201 0k marking sot-89 1R SOT89

    BAS21LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAS21LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Switching Diode BAS21LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current


    Original     		PDF BAS21LT1/D BAS21LT1 236AB) BAS21LT1/D* BAS21LT1

    MMBTA55

    Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
    Text: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80


    Original     		PDF MMBTA55LT1/D MMBTA55LT1 MMBTA56LT1* MMBTA55 MMBTA56 236AB) MMBTA56LT1 MMBTA55LT1/D* MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1

    MMBFJ177LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBFJ177LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc


    Original     		PDF MMBFJ177LT1/D MMBFJ177LT1 236AB) MMBFJ177LT1

    marking 8b sot-23

    Abstract: marking jv BAS116LT1 BAS116LT3
    Text: MOTOROLA Order this document by BAS116LT1/D SEMICONDUCTOR TECHNICAL DATA BAS116LT1 Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel


    Original     		PDF BAS116LT1/D BAS116LT1 BAS116LT1 BAS116LT3 inch/10 236AB) marking 8b sot-23 marking jv

    marking JY sot-23

    Abstract: BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor BAV199LT1 BAV199LT3
    Text: MOTOROLA Order this document by BAV199LT1/D SEMICONDUCTOR TECHNICAL DATA BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times


    Original     		PDF BAV199LT1/D BAV199LT1 BAV199LT1 BAV199LT3 inch/10 236AB) marking JY sot-23 BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor

    m3j diodes

    Abstract: MMBTH69LT1 MMBTH69
    Text: MOTOROLA Order this document by MMBTH69LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH69LT1 COLLECTOR 3 PNP Silicon • Designed for UHF/VHF Amplifier Applications Motorola Preferred Device 1 BASE • High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA


    Original     		PDF MMBTH69LT1/D MMBTH69LT1 236AB) MMBTH69LT1/D* m3j diodes MMBTH69LT1 MMBTH69

    MMBT404ALT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBT404ALT1/D SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MMBT404ALT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB Symbol


    Original     		PDF MMBT404ALT1/D MMBT404ALT1 236AB) MMBT404ALT1/D* MMBT404ALT1

    MMBFJ175LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max


    Original     		PDF MMBFJ175LT1/D MMBFJ175LT1 236AB) MMBFJ175LT1/D* MMBFJ175LT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA °rd6rNu“ *S Semiconductor Components M AX809 M AX810 SOT-23 PLASTIC PACKAGE TO-236 CASE 318 3-P in M icroprocessor Reset Monitors Features • Precision Vcc Monitor for 3.0V, 3.3V, and 5.0V Supplies • 140msec Guaranteed Minimum RESET, RESET


    OCR Scan     		PDF AX809 AX810 OT-23 O-236) 140msec MAX809) OT-23 MAX809xTR MAX810xTR

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silico n Tuning Diode M M B V432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package


    OCR Scan     		PDF OT-23 V432LT1 MMBV432LT1

    MOTOROLA DIODE 250

    Abstract: Diode Marking C3 dual diode marking c3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA S ilic o n Tuning D io d e MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package


    OCR Scan     		PDF OT-23 MMBV609LT1 MOTOROLA DIODE 250 Diode Marking C3 dual diode marking c3

    zener t2d

    Abstract: T2D zener T2D 8N lm 338 zener T2D 77 zener t2d 40 t2d diodes zener t2d 70 zener t2d 26 T2D 17 67
    Text: motorola SC < D I O D E S / O P T O t,E D • t 3 b 7 2s s D D 8 S « 3 W M0T7 SECTION 4.2.4 DATA SHEETS ZENER VOLTAGE REGULATOR DIODES — continued Section 4.2.4.2 Surface Mounted SECTION 4.2.4.2.1 225 mW SOT-23 MULTIPLE PACKAGE QUANTITY MPQ) REQUIREMENTS


    OCR Scan     		PDF D0flS433 OT-23 OT-23 BZX84C2V4L BZX84C7SL MMBZ5221BL MMBZ5270BL MMBZ5256BL MMBZ5257BL MMBZ5258BL zener t2d T2D zener T2D 8N lm 338 zener T2D 77 zener t2d 40 t2d diodes zener t2d 70 zener t2d 26 T2D 17 67