MOTOROLA SJ TRANSISTOR Search Results

MOTOROLA SJ TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MOTOROLA SJ TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
74LVT JK Flip Flop Abstract: led driver SOT23 6pin lcx244 MOTOROLA lcx 4245 LCX244 quad single supply 50 Ohm Line Drivers diode sj Fairchild Power Switch package to 220 p5 MAX 16841 On semiconductor LCX 574 PA Text: 1 Chapter 1 Introduction to Low-Voltage Logic Chapter C R O S S V O L T Parts & Availability 17 Packaging Options 37 Low-Voltage Logic Cross Reference 49 Glossary 57 Fairchild Low-Voltage Logic Reference Guide Chapter Chapter Glossary  Introduction to Low-Voltage Logic	Original		PDF
MHPM7A8A120A Abstract: motorola bridge rectifier Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MHPM7A8A120MD DATA — — Hybrid Power Module t Integrated Power Stage for 1.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output inverter, brake transistor/diode, current sense resistor and temperature sensor	Original	MHPM7A8A120MD MHPM7A8A120~ MK145BP, 2PHX34223L+ MHPM7A8A120ND MHPM7A8A120A motorola bridge rectifier	PDF
bot64 Abstract: B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2 Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (.) t, Max TOper (.) (Oe) Max Package Style PNP Darlington Transistors, (Co nt' d) 5 10 MJE1091 MJE1091 MJE1091 MJE2090 MJE2091	Original	MJE1091 MJE2090 MJE2091 BOW64A BOW24A 220AB bot64 B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2	PDF
2N4931 Abstract: GE-3 PNP transistor 2N3743 2N3743JTX Text: MOTOROU Orderthls document by2N37-D SEMICONDUCTOR TECHNICAL DATA a ,+!$ ,*: 1. ~t , ~ t,. ~, ., .6> ~ { , ~s. II 2N3743JTX, JTXV 2N4931JTX, JTXV ,11 Processed per MlL4-19500/397 : ‘t. 4 A: Plmlachnologle: ‘L Operallon qejlai .<. ?~, t:,~‘ PNP Silicon, High Voltage	Original	by2N37-D 2N3743JTX, 2N4931JTX, MlL4-19500/397 1PHX241011-2 2N37WTWD 2N4931 GE-3 PNP transistor 2N3743 2N3743JTX	PDF
motorola g18 Abstract: 2N301 2N3700 Y14W 2N3019S 2N3019SJAN 2N3019S MOTOROLA MERET 2N3700 MOTOROLA motorola 2N3019S Text: MOTOROU o Orderthls document by 2N3019SJANID SEMICONDUCTOR TECHNICAL DATA ttl ,$$>. t~i”J,:~$< >,. j/ ,>, ,.!$: .> ~>‘ 1111~ ~~~ ‘‘}1lb “,., 2N3019SJAN, dTX, dTXV, dANS 2N3700dAN, JTX, JTXV, JANS I\o Processed per MlL4-19500/391 NPN Silicon Small+ignal	Original	2N3019SJANID 2N3019SJAN, 2N3700dAN, MlL4-19500/391 2N3019S T0205AD 1PHX24101 motorola g18 2N301 2N3700 Y14W 2N3019S 2N3019SJAN 2N3019S MOTOROLA MERET 2N3700 MOTOROLA motorola 2N3019S	PDF
MI1600 Abstract: 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl Text: . MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMDF4P03HDID DATA Advance Information MMDF4P03HD Medium Power Surface Mount Products Motorola TMOS Dual P-Channel FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s	Original	MMDF4P03HDID MMDF4P03HD MMDF4P03HDm MI1600 100L AN569 MMDF4P03HD MMDF4P03HDR2 ldm # jl	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att Darlington Transistors MPSW13 MPSW14 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage Symbol Value Unit Vdc VCES 30 C ollector-B ase Voltage VCBO 30 Vdc E m itter-B ase Voltage	OCR Scan	MPSW13 MPSW14 00T34b3 MPSW13 b3b7255	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors NPN Silicon COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating C ollector-Em itter Voltage Symbol Value Unit Vdc Vdc VCEO 80 C ollector- Base Voltage VCBO 80 E m itter-Base Voltage vebo 5.0 Vdc Collector Current — Continuous	OCR Scan	Symbol11 b3b72SS	PDF
MRF9411L Abstract: 9411L MRF941 motorola MRF S2GJ Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF941 MMBR941L MRF9411L The RF Line NPIM Silicon Low Noise, High-Frequency Transistors lC = 50 mA LOW NOISE HIGH FREQUENCY TRANSISTORS . . . desig ned fo r use in high gain, low n oise sm all-sig n al am p lifiers. T h is se rie s featu res	OCR Scan	MRF941 MMBR941L MRF9411L MRF941 MRF9411L 9411L motorola MRF S2GJ	PDF
MPS-404A Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor PNP Silicon MPS404A COLLECTOR M otorola Preferred Device 3 1 EMITTER MAXIMUM RATINGS Sym bol Value Unit Collector-Emitter Voltage Rating VCEO -3 5 Vdc C ollector-B ase Voltage VCBO -4 0 Vdc Em itter-Base Voltage	OCR Scan	MPS404A Gt132c MPS-404A	PDF
ic 2113 Abstract: No abstract text available Text: MOTOROLA Order this document by MPIC2113/D SEMICONDUCTOR TECHNICAL DATA Power Products Division M P IC 2113 Advance Information HIGH AND LOW SIDE DRIVER HIGH AND LOW SIDE DRIVER The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC	OCR Scan	MPIC2113/D MPIC2113 ic 2113	PDF
bd136 equivalent Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	OCR Scan	MRF20060 MRF20060S Impedan70 IS22I bd136 equivalent RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR electrolytic Mallory Capacitor transistor APPLICATIONS Hf 12 v 150 watt transistor bd135 1000 watt Motorola power supply 2779, transistor MUR3160T3	PDF
X332 Abstract: 044VH1 14J7 mje6220 D44VH7 d44vh10 d44vh 104 cev D45VH4 Text: MOTOROLA SC XSTRS/R 1EE D I F b3b725M □DflM'lbS 7 \| NPN MOTOROLA D44VH Series SEMICONDUCTOR PNP TECHNICAL DATA D45VH Series 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS These complementary silicon power transistors are designed for	OCR Scan	MJE6220/52e D44VH D45VH X332 044VH1 14J7 mje6220 D44VH7 d44vh10 104 cev D45VH4	PDF
C857 Abstract: c858 C857B Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 BC858AWT1 ,BWT1, CWT1 PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SO T -32 3/SC -7 0 which is	OCR Scan	BC856AWT1 BC857AWT1 BC858AWT1 BC856 BC857 BC858 OT-323/SC-- C857 c858 C857B	PDF

4946 mosfet Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M TSF3N02HD Medium Power Surface Mount Products TMOS Single N-Channel Field Effect Transistor M otorola Preferred Device Micros devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to	OCR Scan	TSF3N02HD MTSF3N02HD 4946 mosfet	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order th is docum ent by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw ork	OCR Scan	BUL44D2/D BUL44D2 BUL44D2	PDF
130001 power transistor Abstract: transistor 130001 K1746 pepi c MRF426A MRF426 VK20Q PEPI -CH 2204B 725M Text: lt.3t.7HS4 007&clû3 1 89D 7 8 9 8 3 6 3 6 7 2 5 4 MOTOROLA SC <X STR S/R F D 3 7 - A * MOTOROLA SEMICONDUCTOR MRF426 MRF426A TECHNICAL DATA T h e R F L in e 25 W P E P )- 3 0 M H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed for high gain driver and output linear am plifier stages	OCR Scan	MRF426 MRF426A MRF426, 130001 power transistor transistor 130001 K1746 pepi c MRF426A VK20Q PEPI -CH 2204B 725M	PDF
mosfet transistor 32 l 428 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB36N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POW ER FET 32 AMPERES 60 VOLTS R DS on = 0-04 OHM N-Channel Enhancement-Mode Silicon Gate	OCR Scan	0E-05 0E-01 mosfet transistor 32 l 428	PDF
s9093 Abstract: AD131 TC 2-25 Text: M O T O T O 'm fl Order this document i ;f/\|ic0 II ILC 'OR TECHNICAL DATA bv bul45d2/d BUL45D2 Designer's Data Sheet POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter	OCR Scan	bul45d2/d BUL45D2 BUL45D2 2PHX34554C s9093 AD131 TC 2-25	PDF
M2N6660 Abstract: 2N6660 Mosfet 2903 MPF6661 Text: MOTOROLA SEM ICONDUCTOR 2N6660 MPF6660 2N6661 MPF6661 TECHNICAL DATA N-CHANNEL ENH ANCEM ENT-M ODE TM O S FIELD-EFFECT TRANSISTOR 2 .0 A M P E R E N -C H A N N E L T M O S FET T h e s e T M O S FETs are d e s ig n e d fo r h ig h -s p e e d s w itc h in g a p p li	OCR Scan	2N6660 MPF6660 2N6661 MPF6661 2N6660/2N6661 MPF6660/MPF6661 2N6661 M2N6660 Mosfet 2903 MPF6661	PDF
transistor c 3228 Abstract: 2n6546 motorola 2N6546 TD-204AA td204aa Text: m o to r o l a sc xstrs/ r 12E D I f t 3 b7 5 S 4 0Gô4b70 T \| - MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta S h e e t 15 AMPERE NPN SILICON POWER TRANSISTORS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 300 and 400 VOLTS 175 W ATTS	OCR Scan		PDF
marking B22 sot-23 Abstract: marking 44t Text: MOTOROLA Order this document by MMBD914LT1/D SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode M M B D 914L T 1 Motorola Preferred Device 3 O CATHODE 14 O 1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Vr 100 Vdc Forward Current if	OCR Scan	MMBD914LT1/D OT-23 O-236AB) marking B22 sot-23 marking 44t	PDF
BUS36 Abstract: BUS37 BUS37 MOTOROLA transistor 3-440 MARK B3L Text: M O T O R O L A SC -CXSTRS/R F} I" ' 6367254 MOTÖ RO LA D^\|t,3b7ESM SC' X S T R S / R F 96D -80706 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 12 A M PER ES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS The BU S36 and BUS37 transistors are designed for low voltage,	OCR Scan	BUS37 BUS36 BUS37 MOTOROLA transistor 3-440 MARK B3L	PDF
MTP25N10E Abstract: MTP2SN10E mosfet 3767 mtp25n10 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TP 25N 10E Designer's Data Sheet T M O S IV P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode Silicon Gate TM O S POWER FET 25 AMPERES rDS on = 0.075 OHM 100 VOLTS T h is a d v a n c e d " E " s e r ie s o f T M O S p o w e r M O S F E T s is	OCR Scan		PDF

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MOTOROLA SJ TRANSISTOR Search Results

MOTOROLA SJ TRANSISTOR Result Highlights (5)

MOTOROLA SJ TRANSISTOR Datasheets Context Search

74LVT JK Flip Flop

MHPM7A8A120A

bot64

2N4931

motorola g18

MI1600

Untitled

Untitled

MRF9411L

MPS-404A

ic 2113

bd136 equivalent

X332

C857

4946 mosfet

Untitled

130001 power transistor

mosfet transistor 32 l 428

s9093

M2N6660

transistor c 3228

marking B22 sot-23

BUS36

MTP25N10E