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    MOTOROLA RF POWER TRANSISTORS Search Results

    MOTOROLA RF POWER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA RF POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF156R

    Abstract: MRF156 Arco 469 ceramic capacitor
    Text: MOTOROLA Order this document by MRF156/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-Effect Transistors Motorola Preferred Device N–Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.


    Original     		PDF MRF156/D MRF156 MRF156R MRF156 MRF156/D* MRF156R Arco 469 ceramic capacitor

    transistor 6c x

    Abstract: MRF9060 MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060S MRF9060SR1
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF9060 MRF9060S MRF9060Sal MRF9060 MRF9060S MRF9060SR1 RDMRF9060NCDMA transistor 6c x MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060SR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF284 MRF284S US CDMA The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors Freescale Semiconductor, Inc.


    Original     		PDF MRF284 MRF284S RDMRF284USCDMA MRF284 MRF284S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 RDMRF5S21130UMTS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line MRF9080 MRF9080S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF9080 MRF9080S MRF9080 RDMRF9080GSM

    BD136

    Abstract: MJD47 MRF20060R MRF20060RS MURS160T3 rohm mtbf
    Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts


    Original     		PDF MRF20060R/D MRF20060R MRF20060RS MRF20060R) MRF20060R BD136 MJD47 MRF20060RS MURS160T3 rohm mtbf

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts


    Original     		PDF MRF20060R/D MRF20060R MRF20060RS MRF20060R

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs W–CDMA 2.11–2.17 GHz


    Original     		PDF MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 RDMRF5S21130UMTS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library MRF21125 Wideband CDMA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF21125 MRF21125 RDMRF21125WCDMA

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF19045 RDMRF19045NCDMA5

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21125 RDMRF21125WCDMA

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS

    MRF221

    Abstract: 2N6081
    Text: I MOTOROLA SC XSTRS/R F 4bE b3h?asM oo^msa ? D MOTOROLA SEMICONDUCTOR 2N6081 TECHNICAL DATA MRF221 The RF Line 15 W - 175 MHz RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed fo r 1 2.5 V o lt V H F large-signal power am plifier applica­


    OCR Scan     		PDF 2N6081 MRF221 20/4B 2N6081, 00T4124 MRF221 2N6081

    SU 179 transistor

    Abstract: s227
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen­


    OCR Scan     		PDF MRF5035 MRF5035 AN215A, MRF5035. AN721, RF5035 SU 179 transistor s227

    MRF455A

    Abstract: Motorola transistors MRF455 XSTR MRF455 4be marking 1000MP vk200 W-30 MRF-455A marking w30
    Text: I MOTOROLA SC XSTRS/R F 4bE D b3b?2SM □ D ci 4 b 7 4 MOTOROLA SEMICONDUCTOR MRF455 MRF455A TECHNICAL DATA The RF Line 60 W — 30 M Hz RF POWER TRANSISTORS NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for pow er am plifier applications in industrial, com ­


    OCR Scan     		PDF Dci4b74 MRF455 MRF455A 590-65/3B MRF455A Motorola transistors MRF455 XSTR 4be marking 1000MP vk200 W-30 MRF-455A marking w30

    mosfet 6 ghz

    Abstract: 2.4 ghz mosfet mosfet ghz
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF183 Advance Information The RF MOSFET Line M otorola Preferred Device RF Power Field Effect Transistors 45 W, 1.0 GHz, 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFETs


    OCR Scan     		PDF MRF183 MRF183 mosfet 6 ghz 2.4 ghz mosfet mosfet ghz

    MRF839

    Abstract: MRF839F
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF839 MRF839F The RF Line NPN Silicon RF Power Transistors 2 3 W 806-960 MHz RF POWER TRANSISTORS COMMON-EMITTER NPN SILICON . . . designed for 12.5 Volt UHF large-signal, common-emitter amplifier applications in


    OCR Scan     		PDF MRF839F MRF839

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Integrated VHF-UHF Linear Power Amplifier . . . designed for wideband linear applications in the 100 to 500 MHz frequency range. Motorola class A high-power transistors provide excellent ITOs, high gain, and wide


    OCR Scan     		PDF 24-hour

    J115 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		PDF 10pFD 50Vdc 1N5347B, RF177 J115 mosfet

    J945

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		PDF MarketinC14 10nFD 50Vdc 1N5347B 20Vdc RF177 J945

    uhf tv power transistor 250w

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF176GV MRF176GU The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode 200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push


    OCR Scan     		PDF MRF176GV MRF176GU MRF176GV MRF176G MRF176 MRF176GU uhf tv power transistor 250w

    vk200 coil

    Abstract: jmc 5501 MRF315 VK-200-19 ATC - Semiconductor Devices vk200 25CC
    Text: MOTOROLA SC XSTRS/R F b' l E b3b?ES4 D lQ D m S 3ÖT » IMOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF315 The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large-signal output amplifier stages in the 30 to 200 MHz frequency range.


    OCR Scan     		PDF MRF315 01DDM15 vk200 coil jmc 5501 MRF315 VK-200-19 ATC - Semiconductor Devices vk200 25CC

    VK200 INDUCTOR

    Abstract: inductor vk200 choke vk200 VK200 r.f choke MRF240 vk200 rf choke VK200 4B inductor VK200-4B allen bradley resistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed for 13.6 volt VHF large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain


    OCR Scan     		PDF MRF240 VK200 INDUCTOR inductor vk200 choke vk200 VK200 r.f choke vk200 rf choke VK200 4B inductor VK200-4B allen bradley resistor