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    MOTOROLA MJ TRANSISTORS Search Results

    MOTOROLA MJ TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA MJ TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2922 SANKEN

    Abstract: MJ15024 MJ15025 BDY37A SDT604 sanken 2sc2922 sanken 2sa1216 STX10 2SA1117 SDT60 MRF492A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max hFE *T on ON) Min (Hz) 140 140 140 140 140 140 145 150 160 160 200 200 200 200 250 250 200 250 125 125 15 15 15 15 15 15 15 15 80 80 125 15 Max k)N Max (A) (8)


    Original     		PDF MJ3773 2N5631 2N6031 BDY37A TRW6259 2N6259 MJE4343 2SC2922 SANKEN MJ15024 MJ15025 SDT604 sanken 2sc2922 sanken 2sa1216 STX10 2SA1117 SDT60 MRF492A

    MHPM6B10A60D1

    Abstract: MHPM6B10A60D Dimensioning Inverter
    Text: MOTOROLA Order this document by MHPM6B10A60D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B10A60D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT


    Original     		PDF MHPM6B10A60D/D MHPM6B10A60D MHPM6B10A60D/D* MHPM6B10A60D1 MHPM6B10A60D Dimensioning Inverter

    MHPM6B10A120D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHPM6B10A120D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B10A120D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT


    Original     		PDF MHPM6B10A120D/D MHPM6B10A120D 2500re MHPM6B10A120D/D* MHPM6B10A120D

    motorola e6 SCHEMATIC

    Abstract: MHPM6B15A120D
    Text: MOTOROLA Order this document by MHPM6B15A120D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B15A120D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT


    Original     		PDF MHPM6B15A120D/D MHPM6B15A120D 2500re MHPM6B15A120D/D* motorola e6 SCHEMATIC MHPM6B15A120D

    200 amp 120 V igbt

    Abstract: MHPM6B20A60D
    Text: MOTOROLA Order this document by MHPM6B20A60D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B20A60D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT


    Original     		PDF MHPM6B20A60D/D MHPM6B20A60D MHPM6B20A60D/D* 200 amp 120 V igbt MHPM6B20A60D

    AN1403

    Abstract: NMOS MODEL PARAMETERS SPICE PMOS MODEL PARAMETERS SPICE mj04 74ACxxx 74ACTXXX
    Text: AN1403 Application Note  I/O FACT Model Kit Prepared by Willard Tu FACT Applications Engineering This application note provides the SPICE information necessary to allow the customer to perform system level interconnect modelling for the Motorola FACT logic


    Original     		PDF AN1403 AN1403/D BR1333 AN1403 NMOS MODEL PARAMETERS SPICE PMOS MODEL PARAMETERS SPICE mj04 74ACxxx 74ACTXXX

    ESM2040DV

    Abstract: ESM2 ESM2040D ke92 PTC6072 KE924503 m*11014 2SD644 SD6062 esm749a
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD Max (W) hFE Min »T Max (Hz) ICBO Max (A) tr Max (8) r (CE)ut Max (Ohms) T Op«r Package Style Max (°C) Darlington Transistors, NPN (Cont'd) 5 10 15 20 25 30 35 40 45 50


    Original     		PDF D66ES7 2SC3054 D64DS7 D64DS7T D64ES7T GE10009 ETG36-040C ETG36-040D PTC6072 PTC6063 ESM2040DV ESM2 ESM2040D ke92 KE924503 m*11014 2SD644 SD6062 esm749a

    MFQ5460P

    Abstract: 2N5460 DS46
    Text: MFQ5460P o QUAD DUAL-IN-LINE P-CHANNEL JUNCTION FIELD-EFFECTTRANSISTORS . . . depletion mode Type A junction field-effect transistors signed for use in general-purpose amplifier applications. . de- High Gate-Source Breakdown Voltage — V(BR)GSS = 40 Vdc (Min)


    Original     		PDF MFQ5460P 2N5460 MFQ5460P 2N5460 DS46

    f2c02 motorola

    Abstract: f2c02 AN569 MMDF2C02E MMDF2C02ER2 SMD310
    Text: MOTOROLA Order this document by MMDF2C02E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2C02E Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface


    Original     		PDF MMDF2C02E/D MMDF2C02E MMDF2C02E/D* TransistorMMDF2C02E/D f2c02 motorola f2c02 AN569 MMDF2C02E MMDF2C02ER2 SMD310

    AN569

    Abstract: MMDF4C03HD MMDF4C03HDR2 SMD310
    Text: MOTOROLA Order this document by MMDF4C03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.


    Original     		PDF MMDF4C03HD/D AN569 MMDF4C03HD MMDF4C03HDR2 SMD310

    d2c03

    Abstract: AN569 MMDF2C03HD MMDF2C03HDR2 SMD310 mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by MMDF2C03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2C03HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs


    Original     		PDF MMDF2C03HD/D MMDF2C03HD MMDF2C03HD/D* d2c03 AN569 MMDF2C03HD MMDF2C03HDR2 SMD310 mosfet transistor 400 volts.100 amperes

    AN569

    Abstract: MMDF3C03HD MMDF3C03HDR2 SMD310
    Text: MOTOROLA Order this document by MMDF3C03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF3C03HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.


    Original     		PDF MMDF3C03HD/D MMDF3C03HD AN569 MMDF3C03HD MMDF3C03HDR2 SMD310

    AN569

    Abstract: D2C02 MMDF2C02HD MMDF2C02HDR2 SMD310
    Text: MOTOROLA Order this document by MMDF2C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2C02HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs


    Original     		PDF MMDF2C02HD/D MMDF2C02HD MMDF2C02HD/D* AN569 D2C02 MMDF2C02HD MMDF2C02HDR2 SMD310

    JE4353

    Abstract: 2U 34 mje4343 motorola MJE4340
    Text: MOTOROLA SC 12E XS TRS/R F 0 § MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 0005355 7 | NPN PNP MJE4340 MJE4341 MJE4342 MJE4343 MJË4350 MJE4351 MJE4352 MJE4353 T - 33-13 T ^ 31 -1 3 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON


    OCR Scan     		PDF MJE4340 MJE4341 MJE4342 MJE4343 MJE4351 MJE4352 MJE4353 JE4353 2U 34 mje4343 motorola

    MJ15011

    Abstract: 92 0151 MJ15012 XSTR
    Text: MOTOROLA SC 6367254 iXSTRS/R DË”|t.3t.75SM D G f l l l l h F> MOTOROLA S C XSTRS/R F 9 6 D '8 U 16 D T - 3 3 -IS N P U MOTOROLA MJ15011 SEMICONDUCTOR PNP TECHNICAL DATA MJ 15012 A d v a n c e In fo r m a tio n 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    OCR Scan     		PDF MJ15011 MJ15012_ MJ15011 MJ15012 100Vdc, ----B0N01NG 92 0151 XSTR

    2N6034-2N6039

    Abstract: buc ku 1N5825 369A-13 MJD6036 MJD6039 MSD6100 transistor 228 npn motorola
    Text: MOTOROLA Order this document by MJ D6036/D SEMICONDUCTOR TECHNICAL DATA NPN M JD 6036 Com plem entary Darlington Power Transistors PNP M JD 6039 DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages


    OCR Scan     		PDF D6036/D 2N6034-2N6039 MJD6036/D MJD6036/D buc ku 1N5825 369A-13 MJD6036 MJD6039 MSD6100 transistor 228 npn motorola

    transistor mj 3055

    Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
    Text: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •


    OCR Scan     		PDF D2955/D MJE2955 MJE3055 transistor mj 3055 d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data

    Scans-053

    Abstract: No abstract text available
    Text: Order this document by MRFIC0930/D MJ MOTOROLA — . M RFIC0930 Advance Information 900 MHz GaAs Low Noise Am plifier w ith Gain Control Designed primarily for use in 900 MHz wireless communication systems such as GSM, AMPS, and Industrial, Scientific, and Medical (ISM band


    OCR Scan     		PDF MRFIC0930/D RFIC0930 MRFIC0930 Scans-053

    7MC-81282

    Abstract: 7MC81282 3361C 7MC8128
    Text: Mj MOTOROLA MC3361C Low Power Narrowband FM IF The M C 3361C includes an O scillator, M ixer, Lim iting A m plifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute S w itch. T his d e v ic e is d e s ig n e d fo r use in FM dual c o n ve rsio n


    OCR Scan     		PDF MC3361C 3361C MC3361C CFU455D2 7MC-81282 7MC81282 7MC8128

    Untitled

    Abstract: No abstract text available
    Text: Orc er ' Y s c’a 'a s'ioe* MOTOROLA i bocíí.': SEMICONDUCTOR TECHNICAL DATA MJ E 18002 M JF18002 Designer’s Data Sheet SWITCHMODE™ M otorola Preferred D e v ice s NPN B ipolar Pow er Transistor For S w itching Pow er Supply A pplications The MJE/MJF18002 have an applications specific state-of-the-art die designed for use


    OCR Scan     		PDF MJE/MJF18002 O-220 O-220 MJF18002, 21A-06 O-220AB 221D-01 221D-02. MJF18002 221D-02

    MJH16032

    Abstract: MJE16032 MJH16034 P6302 circuit 7403 u3 AM503 MJE16034 mje16
    Text: MQTORCLA SC XSTRS/R F 12E 0 § b3fc,7SS4 000542=1 T | T -3 S -I3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16032 MJ E 16034 MJH16032 MJH16034 Designer's Data Sheet IMPIM Silicon Power Transistors Switchmode III Series T h e se tra n s is to rs are d esig n e d fo r h ig h -vo ltag e, hig h -sp eed , p o w e r s w itc h in g in in d u c­


    OCR Scan     		PDF 221a-04 tq-220ab) O-218AC MJH16032 MJE16032 MJH16034 P6302 circuit 7403 u3 AM503 MJE16034 mje16

    J14002

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high-power amplifier and switching circuit applications, • • • High Current Capability — lc Continuous = 60 Amperes


    OCR Scan     		PDF MJ14002* MJ14001 MJ14003* MJ14002 MJ14003 10tol00 J14002

    transistor MJ 15024

    Abstract: MOTOROLA MJ15024 mj16022 15024 MJ15022 MJ15024 Motorola MJ15022 J15024
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA HDH MJ15022 MJ15024* Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • • ‘Motorola P r t f f r»d Dtvtoo


    OCR Scan     		PDF MJ15022 MJ15024 MJ15024* J15022M J15024 transistor MJ 15024 MOTOROLA MJ15024 mj16022 15024 Motorola MJ15022 J15024

    MOTOROLA MJ15023

    Abstract: TRANSISTOR 3611 MOTOROLA POWER TRANSISTOR rev 6 mj15025 motorola mj 15025 mj16025 MJ15025
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M J15023 M J15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • • ‘ M otorola Preferred D«v c«


    OCR Scan     		PDF MJ15023 MJ15025 J15023 J15025* O-204AA MJ15023MJ1S025 MOTOROLA MJ15023 TRANSISTOR 3611 MOTOROLA POWER TRANSISTOR rev 6 mj15025 motorola mj 15025 mj16025