BC237
Abstract: 2n2222a SOT223 5161 common anode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for
|
Original
|
PDF
|
OT-223
MV7005T1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
2n2222a SOT223
5161 common anode
|
sot-223 body marking D K Q F
Abstract: MV7005T1 pd 223 V7005
Text: MOTOROLA Order this document by MV7005T1/D SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for
|
Original
|
PDF
|
MV7005T1/D
MV7005T1
OT-223
sot-223 body marking D K Q F
MV7005T1
pd 223
V7005
|
2n3819 replacement
Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device
|
Original
|
PDF
|
MMBV809LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n3819 replacement
2n3053 replacement
BC109C replacement
mps2907 replacement
bf245 replacement
BC237
BF245
bf258 replacement
J112 equivalent
2N4265
|
BAW156LT1
Abstract: BAW156LT3
Text: MOTOROLA Order this document by BAW156LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 Motorola Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times
|
Original
|
PDF
|
BAW156LT1/D
BAW156LT1
BAW156LT1
BAW156LT3
inch/10
236AB)
|
marking JY sot-23
Abstract: BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor BAV199LT1 BAV199LT3
Text: MOTOROLA Order this document by BAV199LT1/D SEMICONDUCTOR TECHNICAL DATA BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times
|
Original
|
PDF
|
BAV199LT1/D
BAV199LT1
BAV199LT1
BAV199LT3
inch/10
236AB)
marking JY sot-23
BAV199
marking 8b sot-23
RESISTOR footprint dimension
JY marking transistor
|
BAV170LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAV170LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV170LT1 Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times
|
Original
|
PDF
|
BAV170LT1/D
BAV170LT1
BAV170LT1
BAV170LT3
inch/10
236AB)
|
j305 replacement
Abstract: BC237 mps2907 replacement BC109C replacement
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical
|
Original
|
PDF
|
MMBV3102LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
j305 replacement
BC237
mps2907 replacement
BC109C replacement
|
MOC8080
Abstract: No abstract text available
Text: MOTOROLA Order this document by MOC8080/D SEMICONDUCTOR TECHNICAL DATA MOC8080 GlobalOptoisolator 6-Pin DIP Optoisolator Darlington Output [CTR = 500% Min] Motorola Preferred Device The MOC8080 device consists of a gallium arsenide infrared emitting diode
|
Original
|
PDF
|
MOC8080/D
MOC8080
MOC8080
MOC8080/D*
OptoelectronicsMOC8080/D
|
MGY40N60D
Abstract: motorola 6810
Text: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
|
Original
|
PDF
|
MGY40N60D/D
MGY40N60D
IGBTMGY40N60D/D
MGY40N60D
motorola 6810
|
Transistor motorola 418
Abstract: mosfet amp ic MGW12N120D 305 Power Mosfet MOTOROLA 305 Mosfet MOTOROLA Motorola 720 transistor
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
|
Original
|
PDF
|
MGW12N120D/D
MGW12N120D
MGW12N120D/D*
Transistor motorola 418
mosfet amp ic
MGW12N120D
305 Power Mosfet MOTOROLA
305 Mosfet MOTOROLA
Motorola 720 transistor
|
mgy20n120d
Abstract: IGBT 250 amp
Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
|
Original
|
PDF
|
MGY20N120D/D
MGY20N120D
mgy20n120d
IGBT 250 amp
|
MGW12N120D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247
|
Original
|
PDF
|
MGW12N120D/D
MGW12N120D
MGW12N120D
|
BC237
Abstract: sot23 transistor marking JY
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
|
Original
|
PDF
|
BAV199LT1
BAV199LT3
inch/10
BAV199LT1
236AB)
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
sot23 transistor marking JY
|
BC237
Abstract: 2N2904 bf245b equivalent SOT23 Marking JX
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAV170LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
|
Original
|
PDF
|
BAV170LT1
BAV170LT3
inch/10
BAV170LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
2N2904
bf245b equivalent
SOT23 Marking JX
|
|
|
mosfet amp ic
Abstract: transistor motorola 236 MGY25N120D
Text: MOTOROLA Order this document by MGY25N120D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
|
Original
|
PDF
|
MGY25N120D/D
MGY25N120D
MGY25N120D/D*
mosfet amp ic
transistor motorola 236
MGY25N120D
|
BC237
Abstract: TRANSISTOR bc177b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
|
Original
|
PDF
|
BAW156LT1
BAW156LT3
inch/10
BAW156LT1
236AB)
Junc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
TRANSISTOR bc177b
|
BC237
Abstract: Y2 sot 23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3401LT1 Silicon Pin Diode Motorola Preferred Device This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount
|
Original
|
PDF
|
MMBV3401LT1
236AB)
P218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
Y2 sot 23
|
transistor MJ 122
Abstract: MGY40N60D
Text: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
|
Original
|
PDF
|
MGY40N60D/D
MGY40N60D
MGY40N60D/D*
TransistorMGY40N60D/D
transistor MJ 122
MGY40N60D
|
MGY30N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
|
Original
|
PDF
|
MGY30N60D/D
MGY30N60D
MGY30N60D/D*
TransistorMGY30N60D/D
MGY30N60D
|
SOT223 package
Abstract: power diode sot223 sot223 device Marking
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M V7005T1 S ilicon Tim ing Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high-tuning ratio applications. The device is housed in the SOT-223 package which is designed for
|
OCR Scan
|
PDF
|
OT-223
V7005T1
318E-04
MV700ST1
SOT223 package
power diode sot223
sot223 device Marking
|
motorola diode marking code
Abstract: VA MARKING SC-70 PACKAGE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 Motorola Preferred Device# This C ommon Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70
|
OCR Scan
|
PDF
|
SC-70
M1MA141/2WAT1
inch/3000
A141/2W
inch/10
M1MA141WAT1
M1MA142WAT1
SC-70/SOT-323
M1MA142WAT1
motorola diode marking code
VA MARKING SC-70 PACKAGE
|
motorola 5118
Abstract: SOT-223 KD
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M V7005T1 Silicon Epicap Diode Motorola Preferred Device This silicon epicap diode is designed for use in high capacitance, high-tuning ratio applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
|
OCR Scan
|
PDF
|
OT-223
MV7005T1
inch/1000
MV7005T3
inch/4000
V7005T1
7005T1
motorola 5118
SOT-223 KD
|
Motorola 417
Abstract: BAS116LT1 BAS116LT3 lp "sot23 marking motorola" a01102
Text: MOTOROLA SC DIODES/OPTO bûE ]> • b3b725S 00073^1 M*îT ■■ M0T7 Order this data sheet by BAS116LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAS116LT1 Sw itching Diode Motorola Preferred Device This switching diode has the following features:
|
OCR Scan
|
PDF
|
b3b725S
BAS116LT1
BAS116LT3
inch/10
BAS116LT1/D
BAS116LT1
OT-23
O-236AB)
Motorola 417
lp "sot23 marking motorola"
a01102
|
Untitled
Abstract: No abstract text available
Text: Order this data sheet by BAV199LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: Low Leakage Current Applications Medium Speed Switching Times
|
OCR Scan
|
PDF
|
BAV199LT1/D
BAV199LT1
BAV199LT3
inch/10
BAV199LT1
OT-23
O-236AB)
2PHX33713F-0
|
