MOTOROLA CM 340 A TRANSISTOR Search Results

MOTOROLA CM 340 A TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

MOTOROLA CM 340 A TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
johanson trim Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M RF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N-Channel Enhancement-Mode MOSFET D e s ig n e d p rim a rily fo r w id e b a n d la r g e -s ig n a l o u tp u t an d d riv e r fro m	OCR Scan	RF160/D johanson trim	PDF
SU 179 transistor Abstract: SU 179 Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single	OCR Scan	RF275L/D SU 179 transistor SU 179	PDF
F 2452 mosfet Abstract: DV2820 0823L R K J 0822 Text: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •	OCR Scan	RF166C/D MRF166C MRF136, DV2820, BLF244, SD1902, ST1001 F 2452 mosfet DV2820 0823L R K J 0822	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz	OCR Scan	MRF177/D	PDF
2N4851 Abstract: 2N4852 UJT 2N4851 transistor 2n4852 2N4853 2n4852 data IEB20 UJT 2N4852 2N4851 transistor Text: M O T O R O L A SC I D IOD ES/ OP TO 2SE D • b 3 b 7 5 S S QQflQ^aO 1 NOT RECOMMENDED FOR NEW DESIGNS I 2N4851 thru 2N4853 PN U nijunction Transistors Silicon Unijunction Transistors . . . designed for pulse and timing circuits, sensing circuits, and thyristor trigger	OCR Scan	2N4851 2N4853 2N4852 UJT 2N4851 transistor 2n4852 2N4853 2n4852 data IEB20 UJT 2N4852 2N4851 transistor	PDF
tme 126 Abstract: transistor TT 2442 MGW12N120D 3EML Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged	Original	MGW12N120D/D MGW12N120DID tme 126 transistor TT 2442 MGW12N120D 3EML	PDF
MRF328 Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454 Text: Order this document by AN790/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN790 THERMAL RATING OF RF POWER TRANSISTORS Prepared by: Robert J. Johnsen Reliability is of primary concern to many users of transistors. The degree of reliability achieved is controlled by the device user because he determines the stress levels applied by his circuit and	Original	AN790/D AN790 MRF328 MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454	PDF
gp20n60 Abstract: transistor fall time MJ10 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	O-220 MGP20N60U CASE221A-09 O-22DAB GP20N60U gp20n60 transistor fall time MJ10	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power TVansistor w ith Integrated C ollector-E m itter Diode and B uilt-in E fficient A ntisaturation N etw ork POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS	OCR Scan	MJE18002D2	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	MGP4N60E	PDF
L9181 Abstract: l6262 Nippon capacitors L 0946 Text: MOTOROLA O rder this docum ent by M RF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 1 0 0 - 5 0 0 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc	OCR Scan	RF275G/D L9181 l6262 Nippon capacitors L 0946	PDF
IN5343 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics	OCR Scan	MRF166W/D IN5343	PDF
motorola transistor cross reference Abstract: No abstract text available Text: MOTOROLA Order Number: MC10EP56/D Rev. 0, 04/1999 Semiconductor Components S 0 -2 0 , DW SUFFIX PLASTIC W IDE SO IC PACKAGE CASE 751 D-05 ORDERING INFORMATION M C10EP56DW ’/• SOIC ß j l& PIN DESCRIPTION Product Preview Dual Differential 2:1 M ultiplexer	OCR Scan	MC10EP56/D C10EP56DW 35Ops 20-Lead MC10EP56/D motorola transistor cross reference	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high	OCR Scan	MGP4N60E/D	PDF

SU 179 transistor Abstract: Motorola ic 1036 Nippon capacitors Text: MOTOROLA O rder this docum ent by M RF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	OCR Scan	RF141G/D SU 179 transistor Motorola ic 1036 Nippon capacitors	PDF
S2P02 Abstract: S2P02 mosfet Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field E ffect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface	OCR Scan	MMSF2P02E S2P02 S2P02 mosfet	PDF
4116 2n Abstract: BFG 99 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifiers 2N 5484 2N 5486 N -C h a n n e l — Depletion 1 DRAIN MAXIMUM RATINGS Rating D r a in -G a te Voltage R everse G a te - S o u rc e Voltage D rain C u rrent F o rw a rd G a te C u rrent Total D e vice D issipa tion @ T q = 2 5 cC	OCR Scan	2N5484 2N9486 4116 2n BFG 99	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP20N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high	OCR Scan	MGP20N60U/D MGP20N60U O-220	PDF
BF441 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF ET VH F/UHF Am plifier T ran sistor N-Channel MMBF4416LT1 M otorola Preferred Device 2 SOURCE % 1 DRAIN MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Draln-Gate Voltage vdg 30 Vdc Gate-Source Voltage	OCR Scan	MMBF4416LT1 BF441	PDF
BU3232 Abstract: motorola cm 340 a transistor 323Z darlington type transistor in ignition motorola transistor ignition motorola ignition BU323Z A/motorola transistor ignition Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323Z ‘Motorola Proforrod D«vlc* Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU3232 is a planar, monolithic, high-voltage power Darlington with a built-in active zener clamping circuit. This device is specifically designed for unclamped,	OCR Scan	BU323Z BU3232 motorola cm 340 a transistor 323Z darlington type transistor in ignition motorola transistor ignition motorola ignition BU323Z A/motorola transistor ignition	PDF
uhf amplifier design Abstract: 2N6136 2N5945 Motorola equivalent transistor bc 172 b AN548A j411 Motorola ARCO 465 Compression Trimmer Capacitor 2N5946 MOTOROLA motorola an-282a application AN282A Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN548A/D SEMICONDUCTOR APPLICATION NOTE AN548A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Microstrip Design Techniques for	Original	AN548A/D AN548A uhf amplifier design 2N6136 2N5945 Motorola equivalent transistor bc 172 b AN548A j411 Motorola ARCO 465 Compression Trimmer Capacitor 2N5946 MOTOROLA motorola an-282a application AN282A	PDF
2N6136 Abstract: uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A Text: Order this document by AN548A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN548A MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS Prepared by: Glenn Young power gain of 16 dB and a bandwidth – 1 dB of 8 MHz. Overall efficiency is 48.5% and all harmonics are a minimum	Original	AN548A/D AN548A 2N6136 uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A	PDF
52N06V Abstract: transistor C 2240 GR Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MTB52N06VL TM O S V M otorola Preferred Oevice Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.025 OHM N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance	OCR Scan	MTB52N06VL 52N06V transistor C 2240 GR	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient	OCR Scan	MJE18002D2/D MJE18002D2 MJE18002D2	PDF

MOTOROLA CM 340 A TRANSISTOR Search Results

MOTOROLA CM 340 A TRANSISTOR Result Highlights (5)

MOTOROLA CM 340 A TRANSISTOR Datasheets Context Search

johanson trim

SU 179 transistor

F 2452 mosfet

Untitled

2N4851

tme 126

MRF328

gp20n60

Untitled

Untitled

L9181

IN5343

motorola transistor cross reference

Untitled

SU 179 transistor

S2P02

4116 2n

Untitled

BF441

BU3232

uhf amplifier design

2N6136

52N06V

Untitled