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    MOTOROLA 100 W AMPLIFIER Search Results

    MOTOROLA 100 W AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    MOTOROLA 100 W AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VK200 19 4B INDUCTOR

    Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS


    Original     		PDF MRF275G

    5251f

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L/D MRF275L 5251f

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC X S T RS /R F 12E D | b3fc.72S4 000054=1 2 | T ”7*f MOTOROLA SEMICONDUCTOR TECHNICAL DATA CA2875R CA2875RH The RF Line W ideband L in e a r A m p lifie rs . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability


    OCR Scan     		PDF CA2875R CA2875RH -32dB

    714h

    Abstract: No abstract text available
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line W ideband Linear Am plifier . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with temperature


    OCR Scan     		PDF -32dB CA2875CR 714h

    MRF421 equivalent

    Abstract: mrf421
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF421 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP


    OCR Scan     		PDF MRF421 THERMAL2-344 MRF421 MRF421 equivalent

    transistor MRF317

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal outpul amplifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W


    OCR Scan     		PDF Carrier/120 MRF317 transistor MRF317

    MRF-393

    Abstract: MRF393 equivalent transistor rf "30 mhz" AN 240 Motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF393 The RF Line NPN Silicon Push-Pull RF Power Transistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 100 W, 30 to 500 MHz CONTROLLED ‘Q”


    OCR Scan     		PDF MRF393 MRF393 MRF-393 equivalent transistor rf "30 mhz" AN 240 Motorola

    5201 IC equivalent

    Abstract: MRF326 UG-58
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF326 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. 40 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER


    OCR Scan     		PDF MRF326 MRF326 5201 IC equivalent UG-58

    motorola rf Power Transistor mrf317

    Abstract: hfc4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W


    OCR Scan     		PDF Carrier/120 MBF317 motorola rf Power Transistor mrf317 hfc4

    Transistor TP 2307

    Abstract: motorola rf Power Transistor mrf317 F317
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F317 The RF Line NPN Silicon RF P o w er Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W


    OCR Scan     		PDF Carrier/120 MRF317 Transistor TP 2307 motorola rf Power Transistor mrf317 F317

    MRF317

    Abstract: transistor MRF317
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W


    OCR Scan     		PDF Carrier/120 MRF317 transistor MRF317

    mj802

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ802/D SEMICONDUCTOR TECHNICAL DATA M J802 H igh-Pow er NPN Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR


    OCR Scan     		PDF MJ802/D MJ4502 O-204AA mj802

    sc 2922

    Abstract: CA2890B
    Text: motorola sc xstrs/r f ise o f b3t?asq ooaassb t | MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA CA2890 CA2890B CA2890H The RF Line W id e b a n d Linear A m p lifie rs ., designed for amplifier applications in 50 to 100 ohm system s requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability


    OCR Scan     		PDF CA2890 CA2890B CA2890H 714F-01, CA2890 714J-01, CA2890B sc 2922

    MRF421 equivalent

    Abstract: mrf421
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minimum Gain = 10 dB


    OCR Scan     		PDF MRF421 MRF421 equivalent

    mj4502

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ4502/D SEMICONDUCTOR TECHNICAL DATA M J4502 H igh-Pow er PNP Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR


    OCR Scan     		PDF MJ4502/D J4502 MJ802 O-204AA mj4502

    mrf317"

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . designed primarily for wideband large-signal output amplifier stages in 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB


    OCR Scan     		PDF Carrier/120 MRF317 mrf317"

    2443 MOTOROLA transistor

    Abstract: High-Power NPN Silicon Power Transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minimum Gain = 10 dB


    OCR Scan     		PDF ACTERISTI/16 56-590-65/3B MRF421 2443 MOTOROLA transistor High-Power NPN Silicon Power Transistor

    CA4812H

    Abstract: motorola linear CA4812 MOTOROLA wideband hybrid amplifiers 1313 motorola motorola 747 01-mfd chip CA4S12
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 1 ■ MOTb MOTOROLA ■ SE M IC O N D U C T O R TECHNICAL DATA CA4812 CA4812H The RF Line W id e b a n d Linear A m p lifie rs . d e sign e d for am plifier ap p lication s in 50 to 100 o h m sy st e m s requiring w ide


    OCR Scan     		PDF CA4812 CA4812, CA4812H T-74-09-01 -32dB motorola linear MOTOROLA wideband hybrid amplifiers 1313 motorola motorola 747 01-mfd chip CA4S12

    MRF340

    Abstract: AMO 0210 transistor s97
    Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE » b3b?aS4 • SEMICONDUCTOR ■■ OOTMS^ 3 ■ T -3 3 -0 5 TECHNICAL DATA MRF340 The RF Line 8W 100-150 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR N PN S IL IC O N . . .designed p rim arily for use in V H F am plifiers w ith amplitude


    OCR Scan     		PDF MRF340 14bQ2 MRF340 AMO 0210 transistor s97

    CQ 20.000

    Abstract: MRF421 equivalent MRF421 1N4997
    Text: M í ir l\ z i MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP


    OCR Scan     		PDF MRF421 150mA CQ 20.000 MRF421 equivalent MRF421 1N4997

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power TVansistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 M H z frequency range. • 100 W, 30 to 500 MHz CONTROLLED “Q”


    OCR Scan     		PDF 2N6986

    CA2820

    Abstract: CA2820H MOTOROLA wideband hybrid amplifiers S2422 30mH choke ltsj
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA C A 2820 CA2820H The RF Line W id e b a n d L in e a r A m p lifie rs . . . designed fo r am p lifie r applications in 50 to 100 ohm systems requiring w ide bandw idth, low noise and lo w distortion. This hybrid provides excellent gain stability


    OCR Scan     		PDF VC100 -32dB 01JJF CA2820 CA2820H MOTOROLA wideband hybrid amplifiers S2422 30mH choke ltsj

    5800c

    Abstract: 5800-C
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA C A 5800C C A 5800C S The RF Line W ideband L in ear A m p lifiers . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with


    OCR Scan     		PDF 5800C -17dB. CA5800S CA5800CS CA5800C 714P-02, CA5800CS 714T-02, CA5800C 5800-C