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    MOSPEC S10C45 SCHOTTKY BARRIER RECTIFIERS Search Results

    MOSPEC S10C45 SCHOTTKY BARRIER RECTIFIERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    MOSPEC S10C45 SCHOTTKY BARRIER RECTIFIERS Datasheets Context Search

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    MOSPEC S10C45 SCHOTTKY BARRIER RECTIFIERS

    Abstract: S10C30 S10C45 S10C50 S10C60 FSM 12.5 S10c
    Text: MOSPEC S10C30 thru S10C60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.


    OCR Scan     		PDF S10C30 S10C60 S10C50 MOSPEC S10C45 SCHOTTKY BARRIER RECTIFIERS S10C45 S10C50 S10C60 FSM 12.5 S10c

    S10C30

    Abstract: S10C45 S10C50 S10C60
    Text: Bk MOSPEC S10C30 thru S10C60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.


    OCR Scan     		PDF S10C30 S10C60 S10C50 S10C45 S10C50 S10C60