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    MOSFET TETRODE Search Results

    MOSFET TETRODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TETRODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N200 MOSFET

    Abstract: 3N200
    Text: 3N200 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N200 Online Store 3N200 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics


    Original     		PDF 3N200 3N200 com/3n200 3N200 MOSFET

    3N141

    Abstract: tetrode
    Text: 3N141 N-Channel; Dual-Gate Tetrode MOSFET 5.63 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N141 Online Store 3N141 Diodes N-Channel; Dual -Gate Tetrode MOSFET Transistors Integrated Circuits checkout.* Optoelectronics


    Original     		PDF 3N141 3N141 com/3n141 tetrode

    3n159

    Abstract: dual-gate
    Text: 3N159 N-Channel; Dual-Gate Tetrode MOSFET 6.38 Transistors MOSFETs and TempF. Page 1 of 1 Enter Your Part # Home Part Number: 3N159 Online Store 3N159 Diodes N-Channel; Dual-Gate Tetrode MOSFET Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 3N159 3N159 com/3n159 dual-gate

    3N211

    Abstract: Depletion
    Text: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


    Original     		PDF 3N211 3N211 com/3n211 Depletion

    transistors mos

    Abstract: No abstract text available
    Text: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


    Original     		PDF 3N212 3N212 com/3n212 transistors mos

    p 1S marking SOT143

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		PDF BF2040. BF2040 BF2040R BF2040W OT143 OT343 BF2040, BF2040W p 1S marking SOT143

    sot143 sot343

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		PDF BF2040. BF2040 BF2040R BF2040W OT143 OT343 BF2040, BF2040W sot143 sot343

    E6327

    Abstract: DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		PDF BF2040. BF2040 OT143 BF2040R BF2040W OT343 E6327 DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143

    BF2040

    Abstract: BF2040R BF2040W sot143 sot343
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		PDF BF2040. BF2040 OT143 BF2040R BF2040W OT343 BF2040 BF2040R BF2040W sot143 sot343

    BF2040

    Abstract: BF2040R BF2040W 1V66
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		PDF BF2040. BF2040 OT143 BF2040R BF2040W OT343 Feb-25-2004 BF2040 BF2040R BF2040W 1V66

    BF2040W

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		PDF BF2040. BF2040 OT143 BF2040R BF2040W OT343 BF2040W

    mosfet marking code gg

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		PDF BF2040. BF2040 BF2040R BF2040W OT143 OT143R OT343 BF2040, BF2040W mosfet marking code gg

    BF1009

    Abstract: 1009 Q62702-F1613
    Text: BF 1009 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF Q62702-F1613 OT-143 Jul-29-1996 BF1009 1009 Q62702-F1613

    Q62702-F1628

    Abstract: No abstract text available
    Text: BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 1009S Q62702-F1628 OT-143 Jul-29-1996 Q62702-F1628

    bf998

    Abstract: application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		PDF BF998. BF998 BF998R OT143 OT143R BF998, application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note

    Q62702-F1628

    Abstract: marking code g1s
    Text: BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 1009S 1009S Q62702-F1628 OT-143 200MHz Q62702-F1628 marking code g1s

    bf998

    Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		PDF BF998. BF998 OT143 BF998R OT143R BF998W OT343 BF998, Feb-13-2004 bf998 bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R

    Q62702-F1498

    Abstract: No abstract text available
    Text: BF 1005 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF Q62702-F1498 OT-143 Jul-29-1996 Q62702-F1498

    marking G2s

    Abstract: No abstract text available
    Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF1012S


    OCR Scan     		PDF BF1012S BF1012S Q62702-F1627 OT-143 200MHz 200MHz marking G2s

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1776 OT-343

    marking code g1s

    Abstract: marking g1s marking G2s
    Text: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1774 OT-343 marking code g1s marking g1s marking G2s

    SOT 343 MARKING BF

    Abstract: 2SM10 marking code g1s
    Text: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1776 OT-343 SOT 343 MARKING BF 2SM10 marking code g1s

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 2030W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


    OCR Scan     		PDF 62702-F1774 T-343

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF 1012S


    OCR Scan     		PDF BF1012S Q62702-F1627 1012S T-143 200MHz