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    MOSFET SUB75P03 Search Results

    MOSFET SUB75P03 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET SUB75P03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75P03-08 O-220AB O-263 SUP75P03-08 SUB75P03-08 O-220AB O-263) O-263 08-Apr-05

    SUB75P03-08

    Abstract: SUP75P03-08
    Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75P03-08 O-220AB O-263 SUB75P03-08 SUP75P03-08 O-220AB O-263) 18-Jul-08 SUB75P03-08 SUP75P03-08

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75P03-08 Siliconix P-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB75P03Ć08 Top View PĆChannel MOSFET SUP75P03Ć08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB75P03-08 O220AB SUB75P0308 SUP75P0308 O-220AB O-263) O-263 S-57253--Rev. 24-Feb-98

    SUP75P03-08

    Abstract: No abstract text available
    Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75P03-08 O-220AB O-263 SUB75P03-08 SUP75P03-08 O-220AB O-263) S-63480--Rev. 12-Jul-99 SUP75P03-08

    SUB75P03-08

    Abstract: SUP75P03-08
    Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75P03-08 O-220AB O-263 SUB75P03-08 SUP75P03-08 O-220AB O-263) S-05111--Rev. 10-Dec-99 SUB75P03-08 SUP75P03-08

    AN609

    Abstract: SUB75P03-07
    Text: SUB75P03-07_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUB75P03-07 AN609 22-Aug-07

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75P03-07 S-71505Rev. 06-Aug-07

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75P03-07 18-Jul-08

    SUP75P03-07-E3

    Abstract: No abstract text available
    Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available


    Original     		PDF SUB75P03-07, SUP75P03-07 2002/95/EC O-220AB O-263 SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3 SUP75P03-07-E3

    SUB75P03-07

    Abstract: SUP75P03-07 a2005v
    Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available


    Original     		PDF SUB75P03-07, SUP75P03-07 2002/95/EC O-263 O-220AB SUB75P03-07 O-263) SUB75P03-07-E3 SUB75P03-07 SUP75P03-07 a2005v

    Untitled

    Abstract: No abstract text available
    Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available


    Original     		PDF SUB75P03-07, SUP75P03-07 2002/95/EC O-263 O-220AB SUB75P03-07 O-263) SUB75P03-07-E3

    Untitled

    Abstract: No abstract text available
    Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available


    Original     		PDF SUB75P03-07, SUP75P03-07 2002/95/EC O-263 O-220AB SUB75P03-07 O-263) SUB75P03-07-E3

    Untitled

    Abstract: No abstract text available
    Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available


    Original     		PDF SUB75P03-07, SUP75P03-07 2002/95/EC O-263 O-220AB SUB75P03-07 O-263) SUB75P03-07-E3

    Untitled

    Abstract: No abstract text available
    Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available


    Original     		PDF SUB75P03-07, SUP75P03-07 2002/95/EC O-220AB O-263 SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View


    Original     		PDF SUP/SUB75P03-07 O-220AB O-263 SUP75P03-07 SUB75P03-07 O-220AB O-263) O-263 08-Apr-05

    A2005V

    Abstract: SUB75P03-07 SUP75P03-07
    Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View


    Original     		PDF SUP/SUB75P03-07 O-220AB O-263 SUB75P03-07 SUP75P03-07 O-220AB O-263) O-263 S-00821--Rev. 24-Apr-00 A2005V SUB75P03-07 SUP75P03-07

    SUP75P03-07-E3

    Abstract: SUB75P03-07 SUP75P03-07
    Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View


    Original     		PDF SUP/SUB75P03-07 O-263 O-220AB SUB75P03-07 SUP75P03-07 O-263) SUP75P03-07-E3 O-263, SUP75P03-07-E3 SUB75P03-07 SUP75P03-07

    SUB75P03-07

    Abstract: SUP75P03-07
    Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View


    Original     		PDF SUP/SUB75P03-07 O-263 O-220AB SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3 O-263, SUB75P03-07 SUP75P03-07

    SUB75P03-07

    Abstract: SUB75P03-07-E3 to263 package RthJA SUP75P03-07 TO-263CA
    Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View


    Original     		PDF SUP/SUB75P03-07 O-263 O-220AB SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3 O-263, SUB75P03-07 SUB75P03-07-E3 to263 package RthJA SUP75P03-07 TO-263CA

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View


    Original     		PDF SUP/SUB75P03-07 O-220AB O-263 SUP75P03-07 SUB75P03-07 O-220AB O-263) O-263 S-00652--Rev. 27-Mar-00

    SUB75P03-07

    Abstract: SUP75P03-07
    Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View


    Original     		PDF SUP/SUB75P03-07 O-263 O-220AB SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3 O-263, SUB75P03-07 SUP75P03-07

    IRF3713

    Abstract: IRF3713S SO8 package fairchild P-channel power mosfet SO-8 ST Microelectronics SI6434DQ 3A diode International Rectifier zener diode 1n5245b RECTIFIER DIODES ON Semiconductor MTSF3N03HD
    Text: Application Data Suggested Power MOSFET Switches for CompactPCI Hot-Swap Controller ICs N-Channel V BR DSS RDS(on) @ VGS=10V ID cont. @ 25°C Package International Rectifier 30V 35 milliohms max 5.6A Micro-8 IRF7413 International Rectifier 30V 11 milliohms max


    Original     		PDF IRF7413 Si4420DY IRL3803S RFD20N03SM HUF76129D3S RF1S70N03SM HUF76143S3S SemiMT2002. FDZ208P SUB75P03-07 IRF3713 IRF3713S SO8 package fairchild P-channel power mosfet SO-8 ST Microelectronics SI6434DQ 3A diode International Rectifier zener diode 1n5245b RECTIFIER DIODES ON Semiconductor MTSF3N03HD

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Untitled

    Abstract: No abstract text available
    Text: LTC4414 36V, Low Loss PowerPathTM Controller for Large PFETs DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ Designed Specifically to Drive Large QG PFETs Very Low Loss Replacement for Power Supply OR’ing Diodes 3.5V to 36V AC/DC Adapter Voltage Range


    Original     		PDF LTC4414 LTC4410 LTC4411 OT-23 LTC4412HV LTC4413 4414fc