Untitled
Abstract: No abstract text available
Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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SUP/SUB75P03-08
O-220AB
O-263
SUP75P03-08
SUB75P03-08
O-220AB
O-263)
O-263
08-Apr-05
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PDF
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SUB75P03-08
Abstract: SUP75P03-08
Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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Original
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SUP/SUB75P03-08
O-220AB
O-263
SUB75P03-08
SUP75P03-08
O-220AB
O-263)
18-Jul-08
SUB75P03-08
SUP75P03-08
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP/SUB75P03-08 Siliconix P-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB75P03Ć08 Top View PĆChannel MOSFET SUP75P03Ć08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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Original
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SUP/SUB75P03-08
O220AB
SUB75P0308
SUP75P0308
O-220AB
O-263)
O-263
S-57253--Rev.
24-Feb-98
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PDF
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SUP75P03-08
Abstract: No abstract text available
Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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Original
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SUP/SUB75P03-08
O-220AB
O-263
SUB75P03-08
SUP75P03-08
O-220AB
O-263)
S-63480--Rev.
12-Jul-99
SUP75P03-08
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PDF
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SUB75P03-08
Abstract: SUP75P03-08
Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
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Original
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SUP/SUB75P03-08
O-220AB
O-263
SUB75P03-08
SUP75P03-08
O-220AB
O-263)
S-05111--Rev.
10-Dec-99
SUB75P03-08
SUP75P03-08
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PDF
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AN609
Abstract: SUB75P03-07
Text: SUB75P03-07_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUB75P03-07
AN609
22-Aug-07
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB75P03-07
S-71505Rev.
06-Aug-07
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB75P03-07
18-Jul-08
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PDF
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SUP75P03-07-E3
Abstract: No abstract text available
Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available
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Original
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SUB75P03-07,
SUP75P03-07
2002/95/EC
O-220AB
O-263
SUB75P03-07
SUP75P03-07
O-263)
SUB75P03-07-E3
SUP75P03-07-E3
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PDF
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SUB75P03-07
Abstract: SUP75P03-07 a2005v
Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available
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Original
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SUB75P03-07,
SUP75P03-07
2002/95/EC
O-263
O-220AB
SUB75P03-07
O-263)
SUB75P03-07-E3
SUB75P03-07
SUP75P03-07
a2005v
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PDF
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Untitled
Abstract: No abstract text available
Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available
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Original
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SUB75P03-07,
SUP75P03-07
2002/95/EC
O-263
O-220AB
SUB75P03-07
O-263)
SUB75P03-07-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available
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Original
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SUB75P03-07,
SUP75P03-07
2002/95/EC
O-263
O-220AB
SUB75P03-07
O-263)
SUB75P03-07-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available
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Original
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SUB75P03-07,
SUP75P03-07
2002/95/EC
O-263
O-220AB
SUB75P03-07
O-263)
SUB75P03-07-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available
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Original
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SUB75P03-07,
SUP75P03-07
2002/95/EC
O-220AB
O-263
SUB75P03-07
SUP75P03-07
O-263)
SUB75P03-07-E3
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PDF
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|
|
Untitled
Abstract: No abstract text available
Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View
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Original
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SUP/SUB75P03-07
O-220AB
O-263
SUP75P03-07
SUB75P03-07
O-220AB
O-263)
O-263
08-Apr-05
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PDF
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A2005V
Abstract: SUB75P03-07 SUP75P03-07
Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View
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Original
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SUP/SUB75P03-07
O-220AB
O-263
SUB75P03-07
SUP75P03-07
O-220AB
O-263)
O-263
S-00821--Rev.
24-Apr-00
A2005V
SUB75P03-07
SUP75P03-07
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PDF
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SUP75P03-07-E3
Abstract: SUB75P03-07 SUP75P03-07
Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View
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Original
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SUP/SUB75P03-07
O-263
O-220AB
SUB75P03-07
SUP75P03-07
O-263)
SUP75P03-07-E3
O-263,
SUP75P03-07-E3
SUB75P03-07
SUP75P03-07
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PDF
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SUB75P03-07
Abstract: SUP75P03-07
Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View
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Original
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SUP/SUB75P03-07
O-263
O-220AB
SUB75P03-07
SUP75P03-07
O-263)
SUB75P03-07-E3
O-263,
SUB75P03-07
SUP75P03-07
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PDF
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SUB75P03-07
Abstract: SUB75P03-07-E3 to263 package RthJA SUP75P03-07 TO-263CA
Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View
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Original
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SUP/SUB75P03-07
O-263
O-220AB
SUB75P03-07
SUP75P03-07
O-263)
SUB75P03-07-E3
O-263,
SUB75P03-07
SUB75P03-07-E3
to263 package RthJA
SUP75P03-07
TO-263CA
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View
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Original
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SUP/SUB75P03-07
O-220AB
O-263
SUP75P03-07
SUB75P03-07
O-220AB
O-263)
O-263
S-00652--Rev.
27-Mar-00
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PDF
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SUB75P03-07
Abstract: SUP75P03-07
Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View
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Original
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SUP/SUB75P03-07
O-263
O-220AB
SUB75P03-07
SUP75P03-07
O-263)
SUB75P03-07-E3
O-263,
SUB75P03-07
SUP75P03-07
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PDF
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IRF3713
Abstract: IRF3713S SO8 package fairchild P-channel power mosfet SO-8 ST Microelectronics SI6434DQ 3A diode International Rectifier zener diode 1n5245b RECTIFIER DIODES ON Semiconductor MTSF3N03HD
Text: Application Data Suggested Power MOSFET Switches for CompactPCI Hot-Swap Controller ICs N-Channel V BR DSS RDS(on) @ VGS=10V ID cont. @ 25°C Package International Rectifier 30V 35 milliohms max 5.6A Micro-8 IRF7413 International Rectifier 30V 11 milliohms max
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IRF7413
Si4420DY
IRL3803S
RFD20N03SM
HUF76129D3S
RF1S70N03SM
HUF76143S3S
SemiMT2002.
FDZ208P
SUB75P03-07
IRF3713
IRF3713S
SO8 package fairchild
P-channel power mosfet SO-8
ST Microelectronics
SI6434DQ
3A diode International Rectifier
zener diode 1n5245b
RECTIFIER DIODES ON Semiconductor
MTSF3N03HD
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PDF
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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PDF
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Untitled
Abstract: No abstract text available
Text: LTC4414 36V, Low Loss PowerPathTM Controller for Large PFETs DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ Designed Specifically to Drive Large QG PFETs Very Low Loss Replacement for Power Supply OR’ing Diodes 3.5V to 36V AC/DC Adapter Voltage Range
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LTC4414
LTC4410
LTC4411
OT-23
LTC4412HV
LTC4413
4414fc
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PDF
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