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    MOSFET STRUCTURE Search Results

    MOSFET STRUCTURE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET STRUCTURE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1.2V Drive Nch+Pch MOSFET EM6M2 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm EMT6 Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


    Original     		PDF R0039A

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch+Pch MOSFET US6M11 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode.


    Original     		PDF US6M11 R0039A

    QS6M4

    Abstract: No abstract text available
    Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Dimensions Unit : mm Structure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (6) 0.85 0.7 (4) 1.6 2.8 Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: LM2725,LM2726 LM2725/LM2726 High Speed Synchronous MOSFET Drivers Literature Number: SNVS144B LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that drive both the top MOSFET and bottom MOSFET in a pushpull structure simultaneously. It takes a logic level PWM input


    Original     		PDF LM2725 LM2726 LM2725/LM2726 SNVS144B LM272/clocks

    Untitled

    Abstract: No abstract text available
    Text: 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : M02


    Original     		PDF R0039A

    lm2725

    Abstract: LM2725MX LM2725M LM2726 LM2726M LM2726MX
    Text: LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that can drive both the top MOSFET and bottom MOSFET in a push-pull structure simultaneously. It takes a logic level PWM input and splits it into two complimentary signals with


    Original     		PDF LM2725/LM2726 LM2725/LM2726 LM2725 LM2726 LM2725MX LM2725M LM2726M LM2726MX

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET SH8M12  Structure Dimensions Unit : mm Silicon N-channel MOSFET/ Silicon P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive).  Application Switching


    Original     		PDF SH8M12 R1120A

    Untitled

    Abstract: No abstract text available
    Text: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm TUMT5 2.0 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET SH8M12  Structure Dimensions Unit : mm Silicon N-channel MOSFET/ Silicon P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive).  Application Switching


    Original     		PDF SH8M12 SH8M12 R1120A

    Untitled

    Abstract: No abstract text available
    Text: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm TUMT5 2.0 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    US5U2

    Abstract: No abstract text available
    Text: US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm TUMT5 2.0 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: US6U37 Transistors 2.5V Drive Nch+SBD MOSFET US6U37 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT6 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF US6U37

    Untitled

    Abstract: No abstract text available
    Text: US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Silicon P-channel MOSFET Schottky Barrier DIODE Dimensions Unit : mm TUMT5 2.0 Features 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching.


    Original     		PDF US5U35 US5U35

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 11NM40 Preliminary Power MOSFET 11A, 400V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM40 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state


    Original     		PDF 11NM40 11NM40 QW-R502-A38

    TT8M1

    Abstract: No abstract text available
    Text: 1.5V Drive Nch + Pch MOSFET TT8M1  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). (8) (7) (6) (5) (1) (2)


    Original     		PDF R1010A TT8M1

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET MP6M12  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm MPT6 (Duel) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Application


    Original     		PDF MP6M12 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET MP6M12  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm MPT6 (Duel) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Application


    Original     		PDF MP6M12 MP6M12 R1120A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15NM50 Preliminary Power MOSFET 15A, 500V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 15NM50 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state


    Original     		PDF 15NM50 15NM50 QW-R205-043

    Untitled

    Abstract: No abstract text available
    Text: QS8M12 Data Sheet 4V Drive Nch + Pch MOSFET QS8M12 Dimensions Unit : mm  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5)


    Original     		PDF QS8M12 QS8M12 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET SP8M51  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (8) (5) (1)


    Original     		PDF SP8M51 SP8M51 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET MP6M11  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm MPT6 (Duel) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).  Application


    Original     		PDF MP6M11 R1120A

    Untitled

    Abstract: No abstract text available
    Text: 1.5V Drive Nch + Pch MOSFET TT8M1  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). (8) (7) (6) (5) (1) (2)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 1.2V Drive Nch + Pch MOSFET VT6M1  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm 1.2 Features 1) Low on-resistance. 2) Small package(VMT6). 3) Low voltage drive(1.2V drive). 1.2 (6) 0.5 (5) (4) 0.92


    Original     		PDF R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch + Pch MOSFET SP8M51  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions Unit : mm SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (8) (5) (1)


    Original     		PDF SP8M51 SP8M51 R1120A