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    MOSFET SMD TYPE MOS FIED EFFECT TRANSISTOR 2SJ185 Search Results

    MOSFET SMD TYPE MOS FIED EFFECT TRANSISTOR 2SJ185 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET SMD TYPE MOS FIED EFFECT TRANSISTOR 2SJ185 Datasheets Context Search

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    smd transistor marking H12

    Abstract: smd marking h12 marking H12 2SJ185 MOSFET SMD Type MOS Fied Effect Transistor 2SJ185 transistor SMD h12
    Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ185 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 input impedance. 0.55 Not necessary to consider driving current because of its high +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 3V poer supply.


    Original     		PDF 2SJ185 OT-23 -10mA smd transistor marking H12 smd marking h12 marking H12 2SJ185 MOSFET SMD Type MOS Fied Effect Transistor 2SJ185 transistor SMD h12