smd marking DA QT
Abstract: 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G
Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics
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NTHD3133PF
NTDH3133PF/D
smd marking DA QT
24W16
C2608
SMD mosfet MARKING code TJ
NTHD3133PFT1G
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Untitled
Abstract: No abstract text available
Text: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics
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NTHD3133PF
NTDH3133PF/D
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Untitled
Abstract: No abstract text available
Text: SO T6 6 6 NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX3020NAKV
OT666
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 6 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSS138AKA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P-Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP-6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
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SMD mosfet MARKING code TJ
Abstract: smd diode 303 Semiconductor 5M MARKING CODE SCHOTTKY DIODE K 3850 N Mosfet Power
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, Single N - Channel, with 1.0 A Schottky Barrier Diode, ChipFET Features • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP-6 Package with Better Thermals
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NTHD4N02F
NTHD4N02F/D
SMD mosfet MARKING code TJ
smd diode 303 Semiconductor
5M MARKING CODE SCHOTTKY DIODE
K 3850 N Mosfet Power
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MARKING smd diode Wf
Abstract: TRANSISTOR SMD MARKING CODE QR
Text: PMN70XPE 20 V, single P-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN70XPE
OT457
SC-74)
MARKING smd diode Wf
TRANSISTOR SMD MARKING CODE QR
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Abstract: No abstract text available
Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX3020NAKS
OT363
SC-88)
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Untitled
Abstract: No abstract text available
Text: PMPB15XP 12 V, single P-channel Trench MOSFET 6 July 2012 Preliminary data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB15XP
DFN2020MD-6
OT1220)
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smd diode S2
Abstract: S16G1 POWER MOSFET Rise Time 1 ns 1A smd mosfet equivalent smd mosfet KI8205T 8v smd mosfet DIODE S2 mosfet smd mpf164
Text: MOSFET SMD Type Dual N-Channel High Density Trench MOSFET KI8205T Unit: mm Features Super high dense cell trench design for low RDS on . Rugged and reliable. Surface Mount package. 1 pin mark D1 D2 G1 S1 1 6 G1 D1/D2 2 5 D1/D2 S2 3 4 G2 G2 S1 S2 Absolute Maximum Ratings Ta = 25
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KI8205T
250uA
smd diode S2
S16G1
POWER MOSFET Rise Time 1 ns
1A smd mosfet
equivalent smd mosfet
KI8205T
8v smd mosfet
DIODE S2
mosfet smd
mpf164
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marking code 1f
Abstract: NXP SMD mosfet MARKING CODE
Text: PMPB12UN 20 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB12UN
DFN2020MD-6
OT1220)
marking code 1f
NXP SMD mosfet MARKING CODE
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TRANSISTOR SMD MARKING CODE 1P
Abstract: smd transistor marking 1p smd TRANSISTOR code marking 1P
Text: PMPB33XN 30 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB33XN
DFN2020MD-6
OT1220)
TRANSISTOR SMD MARKING CODE 1P
smd transistor marking 1p
smd TRANSISTOR code marking 1P
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g1 TRANSISTOR SMD MARKING CODE
Abstract: marking code gb
Text: NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX3020NAKV
OT666
g1 TRANSISTOR SMD MARKING CODE
marking code gb
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB200EN 100 V N-channel Trench MOSFET 30 May 2013 Objective data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB200EN
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
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PMCXB900UE
DFN1010B-6
OT1216)
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB40SNA
DFN2020MD-6
OT1220)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB20EN
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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NX2020N2
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB11EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB11EN
DFN2020MD-6
OT1220)
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MOSFET TRANSISTOR SMD MARKING CODE nh
Abstract: No abstract text available
Text: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV160UP
O-236AB)
MOSFET TRANSISTOR SMD MARKING CODE nh
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MOSFET TRANSISTOR SMD MARKING CODE NH
Abstract: PMV160UP smd TRANSISTOR code marking 05 sot23
Text: SO T2 3 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV160UP
O-236AB)
MOSFET TRANSISTOR SMD MARKING CODE NH
PMV160UP
smd TRANSISTOR code marking 05 sot23
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TRANSISTOR SMD MARKING CODE 1v
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB30XN
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE 1v
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB95ENEA 80 V, single N-channel Trench MOSFET 17 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB95ENEA
DFN2020MD-6
OT1220)
AEC-Q101
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB600UNE
DFN1010B-6
OT1216)
MOSFET TRANSISTOR SMD MARKING CODE 11
NXP SMD TRANSISTOR MARKING CODE s1
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